A 20-Gb/s silicon bipolar 1:4-demultiplexer IC

This paper presents a 20-Gb/s 1:4-demultiplexer for future fiber-optic transmission systems. It uses an 0.4-μm emitter double polysilicon 21-GHz f_T Si bipolar foundry process. This is the highest data rate of a 1:4-DEMUX reported so far in any technology. The 1:4-DEMUX features a tree-type architecture with one frequency divider and a channel switch circuit. The circuit design was carefully optimized to achieve high speed and moderate power dissipation. It consumes 1.4 W with a single -4.5-V supply     

High-power passively mode-locked semiconductor lasers

We have developed optically pumped passively mode-locked vertical-external-cavity surface-emitting lasers. We achieved as much as 950 mW of mode-locked average power in chirped 15-ps pulses, or 530 mW in 3.9-ps pulses with moderate chirp. Both lasers operate at a repetition rate of 6 GHz and have a diffraction-limited output beam near 950 nm. In continuous-wave operation, we demonstrate an average output power as high as 2.2 W. Device designs with a low thermal impedance and a smooth gain spectrum are the key to such performance. We discuss design and fabrication of the gain structures and, particularly, their thermal properties     

On the sensitivity of coupled resonator filters without some direct couplings

This paper presents an analysis of the sensitivity of coupled resonator filters in which some direct couplings are missing. The effect of changes in the coupling coefficients and resonant frequencies of the resonators is investigated by directly computing the gradient of the scattering parameters. It is shown that structures that are modular in the input-to-output direction are much less sensitive than those with modularity in the orthogonal direction for the same frequency response.     

Ion Flux from the Cathode Region of a Vacuum Arc

This paper reviews the properties of the cathode ion flux generated in the vacuum arc. The structure and distribution of mass erosion from individual cathode spots and the characteristics of current carriers from the cathode region at moderate arc currents are described. An appreciable ion flux (～10% of total arc current) is emitted from the cathode of a vacuum arc. This ion flux is strongly peaked in the direction of the anode, though some ion flux may be seen even at angles below the plane of the cathode surface. The observed spatial distribution of the ion flux is expressed quite well as an exponential function of solid angle. The ion flux is quite energetic, with average ion potentials much larger than the arc voltage, and generally contains a considerable fraction of multiply-charged ions. The average ion potential and ion multiplicity increase significantly for cathode materials with higher arc voltages, but decrease with increasing arc current for a particular material. The main theories concerning ion acceleration in cathode spots are the potential hump theory (PH), which assumes that all ions are created at the same potential, and the gas dynamic theory (GD), which assumes that all ions are created with the same flow velocity. Experimental data on the potentials and energies of individual ions indicates that these theories in their original forms are not quite correct, however extensions or modifications of the PH and GD theories seem very likely to be able to predict correct values for the charge states, potentials, and energies of individual ions.     

Conversion matrix and gain of self-oscillating mixers

The conversion matrix of self-oscillating mixers is derived from the bias-, amplitude-, and frequency-dependent admittance of the active device together with its dynamic current-voltage characteristic. Components at the image frequency are also taken into account. With this matrix and the circuit admittances at the different frequencies involved, the conversion gain can be expressed. For better insight into the relevant mechanisms, the conversion gain is subdivided into the amplitude response of the self-excited oscillation to an input signal and the demodulation caused by the device internal rectification. The formalism is applied to a simplified model of an oscillating BARITT diode. The resulting analytical expressions allow a discussion of the influence of different device and circuit parameters as well as a qualitative and quantitative comparison with experimental results from a self-oscillating BARITT-diode mixer operating in the V-band at 60 GHz     

A parallel systems approach to universal receivers

The problem of communication over a channel with unknown characteristics is addressed. The true channel is from a known set of channels, but the transmitter and receiver do not know which of these channels is actually in effect. The goal of a universal receiver is to provide nearly optimal demodulation regardless of the channel that is actually in effect. A parallel receiver implementation is proposed for a universal scheme to cope with such uncertainty. The parallel system consists of a finite number of receivers with the property that, for each channel in the set, the performance of at least one of the receivers will be within a specified performance range. Data verification is accomplished by an appropriate coding system. Sufficient conditions for the existence of such a universal receiver for a prescribed set of channels are established, procedures are outlined for the receiver design, and an example is given to illustrate the applicability of the theory. For M-ary signaling it is shown that, from an information-theoretic viewpoint, the data verification can be achieved at no extra cost by use of the intrinsic side information that is provided by an appropriate coding scheme that also provides error correction     

Monitoring of safety features,fissile material accumulation and concentration in nuclear reprocessing by active and passive neutron counting techniques

The application, the advantage and limits of neutron monitoring techniques, such as Hf-monitors, fissile material accumulation and concentration monitors are being discussed. The active neutron counting technique applied to emptied pulsed extraction columns containing Hf-sieve plates allows conclusive answers as to the position of the plates in the columns. Pu-accumulations on Hf-sieve plates in pulsed extraction columns can be estimated within a factor of two, whereby the detection limit is about equal to or less than 1 g Pu/plate. Fissile material concentration changes of 1.1 g/l can be detected in the case of²³⁵U in solution and of 0.4 Pu/l if a²³⁹Pu/²⁴⁰Pu ratio of 4 to 1 is assumed.     

Self-aligning planarization and passivation for integration applications in III-V semiconductor devices

This work reports an easy planarization and passivation approach for the integration of III-V semiconductor devices. Vertically etched III-V semiconductor devices typically require sidewall passivation to suppress leakage currents and planarization of the passivation material for metal interconnection and device integration. It is, however, challenging to planarize all devices at once. This technique offers wafer-scale passivation and planarization that is automatically leveled to the device top in the 1-3-/spl mu/m vicinity surrounding each device. In this method, a dielectric hard mask is used to define the device area. An undercut structure is intentionally created below the hard mask, which is retained during the subsequent polymer spinning and anisotropic polymer etch back. The spin-on polymer that fills in the undercut seals the sidewalls for all the devices across the wafer. After the polymer etch back, the dielectric mask is removed leaving the polymer surrounding each device level with its device top to atomic scale flatness. This integration method is robust and is insensitive to spin-on polymer thickness, polymer etch nonuniformity, and device height difference. It prevents the polymer under the hard mask from etch-induced damage and creates a polymer-free device surface for metallization upon removal of the dielectric mask. We applied this integration technique in fabricating an InP-based photonic switch that consists of a mesa photodiode and a quantum-well waveguide modulator using benzocyclobutene (BCB) polymer. We demonstrated functional integrated photonic switches with high process yield of >90%, high breakdown voltage of >25 V, and low ohmic contact resistance of /spl sim/10 /spl Omega/. To the best of our knowledge, such an integration of a surface-normal photodiode and a lumped electroabsorption modulator with the use of BCB is the first to be implemented on a single substrate.     

Correlation Between Structural and Optical Properties of Composite Polymer/Fullerene Films for Organic Solar Cells

We investigate thin poly(3‐hexylthiophene‐2,5‐diyl)/[6,6]‐phenyl C₆₁ butyric acid methyl ester (P3HT/PCBM) films, which are widely used as active layers in plastic solar cells. Their structural properties are studied by grazing‐incidence X‐ray diffraction (XRD). The size and the orientation of crystalline P3HT nanodomains within the films are determined. PCBM crystallites are not detected in thin films by XRD. Upon annealing, the P3HT crystallinity increases, leading to an increase in the optical absorption and spectral photocurrent in the low‐photon‐energy region. As a consequence, the efficiency of P3HT/PCBM solar cells is significantly increased. A direct relation between efficiency and P3HT crystallinity is demonstrated.