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101.
The synthesis of a specific isotopomer, C6D4H(ortho)-H(ortho)D4C6 of biphenyl is reported. The intramolecular dipolar coupling of the protons leads to a well-resolved single-crystal proton
nuclear magnetic resonance (NMR) spectrum and allows one to study the dynamics of the phenyl rings in a unique way. At room
temperature and above, the most conspicuous dynamical mode consists of 180° ring flips. The present data together with previous
measurements of the total flip rate allow us to conclude that the rings flip almost exclusively independently of each other.
Between the incommensurate (IC) phase transition of biphenyl at 38 K andT=250 K, the prominent namical mode consists of oscillatory twists ϕ(t) of the two rings. The data allow us to infer the mean square, (φ2), of these twists. (φ2) is found to grow linearly withT for 50<T<200 K. From the slope of (φ2) vs.T the frequency (the wave number[(v)\tilde]\tilde v) is derived. The result is[(v)\tilde] = 20\tilde v = 20 cm−1. ForT<38 K, the spectra give direct evidence of the IC phase transition and its nature (stripelike rather than quiltlike). The
temperature dependence of the magnitude of the order parameter of the IC phase is obtained. 相似文献
102.
B. G. Tagiev U. F. Kasumov N. N. Musaeva R. B. Dzhabbarov 《Physics of the Solid State》2003,45(3):426-432
The current-voltage characteristics of Ca4Ga2S7: Eu3+ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca4Ga2S7: Eu3+ single crystals are high-resistance semiconductors with a resistivity of ~109 Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×1014 to 2.7×1015 cm?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×103 V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×104 V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level. 相似文献
103.
Hallbjorner P. Carlberg U. Madsen K. Andersson J. 《Electromagnetic Compatibility, IEEE Transactions on》2005,47(2):291-303
Reverberation chambers can be used to measure the absorption cross section of a dielectric object. The absorption cross section of a dielectric object depends on its size, shape, and electrical material parameters. By comparing with a theoretical model of the absorption cross section, material parameters can be extracted from measurements. A model based on a plane wave approach of incident fields is used here, valid for electrically large material samples in an isotropic environment such as that in a reverberation chamber. Which material parameter can be extracted depends on the properties of the material sample. The presented method combines the accuracy of cavity methods with the flexibility of being able to measure samples of arbitrary size and shape. Because both the reverberation chamber and the material sample are electrically large, the method is particularly useful at millimeter-wave frequencies. 相似文献
104.
Dinesh Topwal U. Manju Sugata Ray S. Raj D. D. Sarma S. R. Krishnakumar M. Bertolo S. La Rosa G. Cautero 《Journal of Chemical Sciences》2006,118(1):87-92
Disordered Sr2FeMoO6 shows a drastic reduction in saturation magnetization compared to highly ordered samples, moreover magnetization as a function
of the temperature for different disordered samples shows qualitatively different behaviours. We investigate the origin of
such diversity by performing spatially resolved photoemission spectroscopy on various disordered samples. Our results establish
that extensive electronic inhomogeneity, arising most probably from an underlying chemical inhomogeneity in disordered samples, is
responsible for the observed magnetic inhomogeneity. It is further pointed out that these inhomogeneities are connected with
composition fluctuations of the type Sr2Fe1+x
Mo1-x
O6 with Fe-rich (x > 0) and Mo-rich (x < 0) regions.
Dedicated to Prof J Gopalakrishnan on his 62nd birthday. 相似文献
105.
Yantao Shen E. Winder Ning Xi C.A. Pomeroy U.C. Wejinya 《Mechatronics, IEEE/ASME Transactions on》2006,11(4):420-427
This paper presents a closed-loop optimally controlled force-sensing technology with applications in both micromanipulation and microassembly. The microforce-sensing technology in this paper is based on a cantilevered composite beam structure with embedded piezoelectric polyvinylidene fluoride (PVDF) actuating and sensing layers. In this type of sensor, the application of an external load causes deformation within the PVDF sensing layer. This generates a signal that is fed through a linear quadratic regulator (LQR) optimal servoed controller to the PVDF actuating layer. This in turn generates a balancing force to counteract the externally applied load. As a result, a closed feedback loop is formed, which causes the tip of this highly sensitive sensor to remain in its equilibrium position, even in the presence of dynamically applied external loads. The sensor's stiffness is virtually improved as a result of the equilibrium position whenever the control loop is active, thereby enabling accurate motion control of the sensor tip for fine micromanipulation and microassembly. Furthermore, the applied force can be determined in real time through measurement of the balance force. 相似文献
106.
107.
This paper discusses the design of soft handoff algorithms for cellular communication systems. The handoff process is modeled as a hybrid system and handoff design is cast as an optimization problem based on such a model. Performance is evaluated in terms of call quality, average number of active base stations, average number of active set updates, and average amount of interference. A soft handoff algorithm, which achieves a tradeoff between these performance criteria, is obtained using principles of dynamic programming. One key feature of the algorithm is that it incorporates the effects of mobility and shadow fading in the handoff decision. Different diversity combining schemes are considered including selective combining, equal gain combining (EGC), and various optimized combining (OC) methods in the soft handoff mode. For EGC and OC, Wilkinson's and Schwartz and Yeh's methods are used to compute the statistics for the power sum of the signals. Simulation results indicate that the performance of the handoff algorithm is a function of the different combining schemes and of the different methods used to compute the statistics of the power sum. Moreover, it is observed that interference cancellation is important in order for the algorithm to be viable for cellular systems which experience interference due to using nonorthogonal multiple access. 相似文献
108.
This paper reports a method to produce networks of crystalline gallium oxide comprised of one‐dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 109 cm–2. A possible mechanism for the fast self‐assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β‐gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous. 相似文献
109.
Kerber A. Cartier E. Pantisano L. Degraeve R. Kauerauf T. Kim Y. Hou A. Groeseneken G. Maes H.E. Schwalke U. 《Electron Device Letters, IEEE》2003,24(2):87-89
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling. 相似文献
110.