An Analysis of Citation Counts of ETRI‐Invented US Patents

From its foundation until 2004, ETRI has registered over 1,000 US patents. This letter analyzes the characteristics of these patents and addresses the explanatory factors affecting their citation counts. For explanatory variables, research team related variables, invention specific variables, and geographical domain related variables are suggested. Zero‐altered count data models are used to test the impact of independent variables. A key finding is that technological cumulativeness, the scale of invention, outputs in the electronic field, and the degree of dependence on the US technology domain positively affect the citation counts of ETRI‐invented US patents. The magnitude of international presence appears to negatively affect the citation counts of ETRI‐invented US patents.     

New hybrid fuzzy controller for direct torque control induction motor drives

A new hybrid fuzzy controller for direct torque control (DTC) induction motor drives is presented in this paper. The newly developed hybrid fuzzy control law consists of proportional-integral (PI) control at steady state, PI-type fuzzy logic control at transient state, and a simple switching mechanism between steady and transient states, to achieve satisfied performance under steady and transient conditions. The features of the presented new hybrid fuzzy controller are highlighted by comparing the performance of various control approaches, including PI control, PI-type fuzzy logic control (FLC), proportional-derivative (PD) type FLC, and combination of PD-type FLC and I control, for DTC-based induction motor drives. The pros and cons of these controllers are demonstrated by intensive experimental results. It is shown that the presented induction motor drive is with fast tracking capability, less steady state error, and robust to load disturbance while not resorting to complicated control method or adaptive tuning mechanism. Experimental results derived from a test system are presented confirming the above-mentioned claims.     

Evaluation and optimization of package processing and design through solder joint profile prediction

Solder joints are generated using a variety of methods to provide both mechanical and electrical connection for applications such as flip-chip, wafer level packaging, fine pitch, ball-grid array, and chip scale packages. Solder joint shape prediction has been incorporated as a key tool to aid in process development, wafer level and package level design and development, assembly, and reliability enhancement. This work demonstrates the application of an analytical model and the Surface Evolver software in analyzing a variety of solder processing methods and package types. Bump and joint shape prediction was conducted for the design of wafer level bumping, flip-chip assembly, and wafer level packaging. The results from the prediction methodologies are validated with experimentally measured geometries at each level of design.     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

The First Template‐Free Growth of Crystalline Silicon Microtubes

A simple template‐free high‐temperature evaporation method was developed for the growth of crystalline Si microtubes for the first time. As‐grown Si microtubes were characterized using X‐ray diffraction, scanning electron microscopy, transmission electron microscopy, and room‐temperature photoluminescence. The lengths of the Si tubes can reach several hundreds of micrometers; some of them have lengths on the order of millimeters. Each tube has a uniform outer diameter along its entire length, and the typical outer diameter is ≈ 2–3 μm. Most of the tubes have a wall thickness of ≈ 400–500 nm, though a considerable number of them exhibit a very thin wall thickness of ≈ 50 nm. Room‐temperature photoluminescence measurement shows the as‐synthesized Si microtubes have two strong emission peaks centered at ≈ 589 nm and ≈ 617 nm and a weak emission peak centered at ≈ 455 nm. A possible mechanism for the formation of these Si tubes is proposed. We believe that the present discovery of the crystalline Si microtubes will promote further experimental studies on their physical properties and smart applications.     

连续波雷达测距中的解模糊技术

研究连续波雷达测距中的距离模糊问题，分析几种常用解模糊方法的性能，并讨论参差比的选取对测距范围的影响。     

Whispering-gallery-like modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.     

Near-ML multiuser detection with linear filters and reliability-based processing

The prohibitive - exponential in the number of users - computational complexity of the maximum-likelihood multiuser detector for direct-sequence code-division multiple-access communications has fueled an extensive research effort for the development of low-complexity multiuser detection alternatives. We show that we can efficiently and effectively approach the error rate performance of the optimum multiuser detector as follows. We utilize a multiuser zero-forcing or minimum mean-square error (MMSE) linear filter as a preprocessor and we establish that the output magnitudes, when properly scaled, provide a reliability measure for each user bit decision. Then, we prepare an ordered, reliability-based error search sequence of length linear in the number of users; it returns the most likely user bit vector among all visited options. Numerical and simulation studies for moderately loaded systems that permit exact implementation of the optimum detector indicate that the error rate performance of the optimum and the proposed detector are nearly indistinguishable over the whole predetection. signal-to-noise ratio range of practical interest. Similar studies for higher user loads (that prohibit comparisons with the optimum detector) demonstrate error rate performance gains of orders of magnitude in comparison with straight decorrelating or MMSE multiuser detection.     

MAX3100在80C196串口扩展中的应用

介绍采用新型的UART器件MAX3100为Intel单片机80C196扩展串口，给出了硬件设计和软件编程，并对关键技术进行了说明。     

Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs

The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.