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151.
152.
Tan Fu Lei Tang Po Chen Horng-Chih Lin Chun-Yen Chang 《Electron Devices, IEEE Transactions on》1995,42(12):2104-2110
A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p+-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF2+-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF2+ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm2 at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm2, respectively. These results demonstrated that a uniform ultrashallow p+-n junction can be obtained by using a thin Si-B layer as a diffusion source 相似文献
153.
154.
J. Shin Y. Hsu T. C. Hsu G. B. Stringfellow R. W. Gedridge 《Journal of Electronic Materials》1995,24(11):1563-1569
GalnSb alloys as well as the constituent binaries InSb and GaSb have been grown by organometallic vapor phase epitaxy using
the new antimony precursor trisdimethylaminoantimony (TDMASb) combined with conventional group III precursors trimethylindium
(TMIn) and trimethylgallium (TMGa). InSb layers were grown at temperatures between 275 and 425°C. The low values of V/III
ratio required to obtain good morphologies at the lowest temperatures indicate that the pyrolysis temperature is low for TDMASb.
In fact, at the lowest temperatures, the InSb growth efficiency is higher than for other antimony precursors, indicating the
TDMASb pyrolysis products assist with TMIn pyrolysis. A similar, but less pronounced trend is observed for GaSb growth at
temperatures of less than 500°C. No excess carbon contamination is observed for either the InSb or GaSb layers. Ga1-xInxSb layers with excellent morphologies with values of x between 0 and 0.5 were grown on GaSb substrates without the use of
graded layers. The growth temperature was 525°C and the values of V/III ratio, optimized for each value of x, ranged between
1.25 and 1.38. Strong photoluminescence (PL) was observed for values of x of less than 0.3, with values of halfwidth ranging
from 13 to 16 meV, somewhat smaller than previous reports for layers grown using conventional precursors without the use of
graded layers at the interface. The PL intensity was observed to decrease significantly for higher values of x. The PL peak
energies were found to track the band gap energy; thus, the luminescence is due to band edge processes. The layers were all
p-type with carrier concentrations of approximately 1017 cm3. Transmission electron diffraction studies indicate that the Ga0.5In0.5 Sb layers are ordered. Two variants of the Cu-Pt structure are observed with nearly the same diffracted intensities. This
is the first report of ordering in GalnSb alloys. 相似文献
155.
Cun Feng Fan David A. Waldman Shaw Ling Hsu 《Journal of Polymer Science.Polymer Physics》1991,29(2):235-246
Raman mechanical spectroscopy was used to examine interfacial effects on the stress distribution in model polydiacetylene fiber/epoxy composites. Epoxy release agents were coated on fiber surfaces to modify the interfacial adhesion properties. The modified fiber surfaces were then characterized by scanning electron microscopy and x-ray photoelectron spectroscopy as well as optical microscopy. No difference in the maximum stress value or stress distribution was observed for the two types of fibers, coated or uncoated, used in composites. This suggests that adhesion properties at the composite interface do not affect tensile stress transfer efficiency nor, therefore, the composite tensile modulus along the fiber axis direction in uniaxial composites. Experimental data were also compared with theoretical calculations assuming perfect bonding between fiber and matrix, and idealized frictional force transfer mechanism at the fiber–matrix interface. 相似文献
156.
157.
158.
Analysis of the Coaxial Ridge-Loaded Helical Groove Waveguide 总被引:1,自引:0,他引:1
Yonghai Lan Wenxiang Wang Yubin Gong 《International Journal of Infrared and Millimeter Waves》2002,23(3):425-434
The coaxial ridge-loaded helical groove waveguide is proposed in this paper. As an all-metal slow-wave circuit, it has advantages of good heat dissipation and great size, and thus is suitable for use of millimeter TWT. By means of field theory, the expressions of the dispersion equation and the coupling impedance of the coaxial ridge-loaded helical groove waveguide are obtained. The influence of various circuit dimensions on the dispersion relation and the coupling impedance is investigated by the results of numerical computation. 相似文献
159.
We report measurements on the phase dynamics of a detuned single mode laser which has in the past shown correspondence to the complex Lorenz equation. The corresponding ranges of periodic pulsing, of detuned chaos and of windows within the chaotic domain are investigated.Invited paper 相似文献
160.