Comparison of mismatch error shaping in multibit oversampledconverters

A number of mismatch error-shaping schemes for oversampled DACs are compared. Simulation results are presented to show that such a comparison should take account of the distribution of the mismatch errors, since the pattern of errors present affects different algorithms in different ways. A scheme for improving the error tolerance of one mismatch shaping architecture is presented     

Radiation and scattering from ferrite-tuned cavity-backed slotantennas: theory and experiment

A three-dimensional finite-element method hybridized with the spectral/spatial domain method of moments is presented for the analysis of ferrite-tuned cavity-backed slot antennas. The cavity, which is partially filled with magnetized ferrite layers, is flush mounted on an infinite ground plane with possible dielectric or magnetic overlay. The antenna operates primarily in the ultrahigh-frequency band. The finite-element method is used to solve for the electric-field distribution inside the cavity, whereas the spectral-domain approach is used to solve for the exterior region. An asymptotic extraction of the exponential behavior of the Green's function followed by a spatial evaluation of the resulting integral is used to improve computational speed. Radar cross section, input impedance, return loss, gain, and efficiency of ferrite-tuned cavity-backed slots (CBS) are calculated for various biasing conditions. Numerical results are compared with experimental data     

Modeling statistical dopant fluctuations in MOS transistors

The impact of statistical dopant fluctuations on the threshold voltage V_T and device performance of silicon MOSFET's is investigated by means of analytical and numerical modeling. A new analytical model describing dopant fluctuations in the active device area enables the derivation of the standard deviation, σV_T , of the threshold voltage distribution for arbitrary channel doping profiles. Using the MINIMOS device simulator to extend the analytical approach, it is found that σV_T, can be properly derived from two-dimensional (2-D) or three-dimensional (3-D) simulations using a relatively coarse simulation grid. Evaluating the threshold voltage shift arising from dopant fluctuations, on the other hand, calls for full 3-D simulations with a numerical grid that is sufficiently refined to represent the discrete nature of the dopant distribution. The average V_T-shift is found to be positive for long, narrow devices, and negative for short, wide devices. The fast 2-D MINIMOS modeling of dopant fluctuations enables an extensive statistical analysis of the intrinsic spreading in a large set of compact model parameters for state-of-the-art CMOS technology. It is predicted that V_T-variations due to dopant fluctuations become unacceptably large in CMOS generations of 0.18 μm and beyond when the present scaling scenarios are pursued. Parameter variations can be drastically reduced by using alternative device designs with ground-plane channel profiles     

Gyrotron coaxial cylindrical resonators with corrugated innerconductor: Theory and experiment

Gyrotron coaxial resonators with a longitudinally slotted inner cylinder are examined analytically using a surface impedance model, from which expressions for the electromagnetic field, ohmic quality (Q) factor, and characteristic equation of the transverse eigenvalues χ _m,p are obtained. The major attributes of such resonators are expressed by the dependence of χ_m,p on the parameter C-defined as the ratio of the outer to inner radii of the coaxial structure. In that connection, the effect of the corrugation parameters on χ_m,p is particularly investigated on the basis of an expression derived for the slope function dχ_m,p,p/dC. It is shown that the χ_m,p(C) curve may either exhibit oscillatory behavior or present a flat portion over a wide range of C depending on the corrugation parameters chosen. The theory is checked against experiment in which resonant frequencies and total Q factors were measured for TE modes operating in the range of 8-16 GHz in a coaxial cavity with 40 slots. Good agreement is found in that the magnitude of the relative error in frequency is less than 0.5%. Corrugated coaxial resonators prove to be relevant to megawatt gyrotrons where highly selective cavities are required to ensure high conversion efficiency     

Neural network congestion controller in prioritised ATM switch

A neural network (NN) scheme is proposed for congestion control in an ATM switch with time priorities. It is shown that in a prioritised switch it is necessary to monitor the buffer to be controlled as well as buffers with higher priorities. Furthermore, it is shown that the NN scheme in a time prioritised switch gives lower cell loss and delay when compared to the conventional binary scheme     

Modulation characteristic of waveguide-type optical frequency combgenerator

We report the modulation characteristics of a waveguide-type optical frequency comb generator (WG-OFCG) with the advantages of compactness, high modulation index and low driving power. The characteristics of the optical frequency comb (OFC) generated when the modulation index exceeds 2π are discussed. The power of the modulation sidebands was measured by the optical heterodyne method with an external-cavity laser as a local oscillator. The dependence of the modulation index of the WG-OFCG on the modulation frequency up to 40 GHz was measured. The generation span of the OFC at the modulation frequency detuned from an integer multiple of the free spectral range (FSR) is discussed     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

Gordon-Haus timing jitter reduction in dispersion-managed solitoncommunications

An analytic theory is presented which demonstrates that the noise induced Gordon-Haus timing jitter in arbitrary dispersion-managed transmission systems is reduced by the power-enhancement factor required to support a dispersion-managed solitons provided the path-average soliton period is much greater than the dispersion-map period. The analysis further predicts the behaviour of the amplitude, width, and quadratic chirp fluctuations due to the amplified spontaneous emission (ASE) noise