首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   53475篇
  免费   13615篇
  国内免费   3057篇
化学   47695篇
晶体学   463篇
力学   1161篇
综合类   94篇
数学   3313篇
物理学   5860篇
无线电   11561篇
  2024年   38篇
  2023年   319篇
  2022年   389篇
  2021年   697篇
  2020年   2169篇
  2019年   3527篇
  2018年   1828篇
  2017年   1419篇
  2016年   4429篇
  2015年   4612篇
  2014年   4703篇
  2013年   5413篇
  2012年   4495篇
  2011年   3657篇
  2010年   4000篇
  2009年   4023篇
  2008年   3521篇
  2007年   2778篇
  2006年   2345篇
  2005年   2471篇
  2004年   2147篇
  2003年   2002篇
  2002年   2821篇
  2001年   2027篇
  2000年   1716篇
  1999年   708篇
  1998年   349篇
  1997年   249篇
  1996年   204篇
  1995年   180篇
  1994年   142篇
  1993年   113篇
  1992年   90篇
  1991年   94篇
  1990年   64篇
  1989年   51篇
  1988年   40篇
  1987年   39篇
  1986年   22篇
  1985年   31篇
  1984年   24篇
  1983年   25篇
  1982年   14篇
  1981年   23篇
  1980年   17篇
  1979年   17篇
  1978年   14篇
  1977年   14篇
  1976年   14篇
  1974年   15篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
11.
12.
Vertical arrays of nanostructures (NSs) are emerging as promising platforms for probing and manipulating live mammalian cells. The broad range of applications requires different types of interfaces, but cell settling on NS arrays is not yet fully controlled and understood. Cells are both seen to deform completely into NS arrays and to stay suspended like tiny fakirs, which have hitherto been explained with differences in NS spacing or density. Here, a better understanding of this phenomenon is provided by using a model that takes into account the extreme membrane deformation needed for a cell to settle into a NS array. It is shown that, in addition to the NS density, cell settling depends strongly on the dimensions of the single NS, and that the settling can be predicted for a given NS array geometry. The predictive power of the model is confirmed by experiments and good agreement with cases from the literature. Furthermore, the influence of cell‐related parameters is evaluated theoretically and a generic method of tuning cell settling through surface coating is demonstrated experimentally. These findings allow a more rational design of NS arrays for the numerous exciting biological applications where the mode of cell settling is crucial.  相似文献   
13.
14.
A (di)graph is supereulerian if it contains a spanning eulerian sub(di)graph. This property is a relaxation of hamiltonicity. Inspired by this analogy with hamiltonian cycles and by similar results in supereulerian graph theory, we analyze a number of sufficient Ore type conditions for a digraph to be supereulerian. Furthermore, we study the following conjecture due to Thomassé and the first author: if the arc‐connectivity of a digraph is not smaller than its independence number, then the digraph is supereulerian. As a support for this conjecture we prove it for digraphs that are semicomplete multipartite or quasitransitive and verify the analogous statement for undirected graphs.  相似文献   
15.
16.
17.
18.
By tuning the length and rigidity of the spacer of bis(biurea) ligands L, three structural motifs of the A2L3 complexes (A represents anion, here orthophosphate PO43?), namely helicate, mesocate, and mono‐bridged motif, have been assembled by coordination of the ligand to phosphate anion. Crystal structure analysis indicated that in the three complexes, each of the phosphate ions is coordinated by twelve hydrogen bonds from six surrounding urea groups. The anion coordination properties in solution have also been studied. The results further demonstrate the coordination behavior of phosphate ion, which shows strong tendency for coordination saturation and geometrical preference, thus allowing for the assembly of novel anion coordination‐based structures as in transition‐metal complexes.  相似文献   
19.
20.
Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号