Strong Pauli paramagnetic effect in the upper critical field of KCa2Fe4As4F2

Recently, 12442 system of Fe-based superconductors has attracted considerable attention owing to its unique double-Fe As-layer structure. A steep increase in the in-plane upper critical field with cooling has been observed near the superconducting transition temperature, Tc, in KCa2Fe4As4F2 single crystals. Herein, we report a high-field investigation on upper critical field of this material over a wide temperature range, and both out-of-plane(H∥c, Hc2c) and in-plane(H∥ab, Hc2ab ) directions have been measured.A sublinear temperature-dependent behavior is observed for the out-of-plane Hc2c , whereas strong convex curvature with cooling is observed for the in-plane Hc2ab . Such behaviors could not be described by the conventional Werthamer-Helfand-Hohenberg(WHH) model. The data analysis based on the WHH model by considering the spin aspects reveals a large Maki parameter α=9,indicating that the in-plane upper critical field is affected by a very strong Pauli paramagnetic effect.     

一种语音同步提示的倒车雷达的设计

主要阐述倒车雷达的原理,设计方法和电路组成。本设计可实现语音信息的同步播放,为驾驶员提供更加便捷的报警提示,采用的探测方式是超声波测距,处理器采用AT89C2051高速单片机。     

Nonvolatile photorefractive holographic recording in Sc:Ce:Cu:LiNbO3

In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO₃ crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO₃ crystals were grown by the Czochralski method and oxidized in Nb₂O₅ powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO₃ crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO₃ crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO₃ and Ce:Cu:LiNbO₃ crystals.     

Interplay between structure and magnetism in Mo12S9I9 nanowires

We investigate the equilibrium geometry and electronic structure of Mo12S9I9 nanowires using ab initio density functional calculations. The skeleton of these unusually stable nanowires consists of rigid, functionalized Mo octahedra, connected by flexible, bistable sulfur bridges. This structural flexibility translates into a capability to stretch up to approximately 20% at almost no energy cost. The nanowires change from conductors to narrow-gap magnetic semiconductors in one of their structural isomers.     

医用生物材料的低温保存研究

生物材料的低温保存一般都要经历降温过程、低温储存过程及复温过程,其中降温过程中对生物细胞的影响最大.每一种生物细胞都有自己合适的降温速率,如能满足其这种降温速率,细胞所受到的低温损伤最小,则生物细胞的复活率最高.文中介绍程序控制变速降温装置的主要结构及几种典型生物体的降温过程.最后,对器官的低温保存进行分析讨论.     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

Influence of Bi underlayer on the magnetic properties of Fe<Subscript>x</Subscript>Pt<Subscript>100-x</Subscript> (<Emphasis Type="BoldItalic">x</Emphasis> =<Emphasis Type="Bold">40</Emphasis>∼<Emphasis Type="Bold">58</Emphasis>) films

We have studied the effect of a Bi underlayer on ordering and coercivity H_c of Fe_xPt_100-x thin films (atomic content of Fe x=40∼58). We found that the Bi underlayer enhances H_c remarkably. After annealing at 400 °C for 20 min, a Bi/Fe₄₉Pt₅₁ film can realize an H_c as high as 1.07×10³ kA/m and a ratio of the remnant M_r to the saturated magnetization M_s as high as 0.93. The ordering process of FePt film was promoted by the diffusion of Bi atoms. Moreover, the Bi underlayer broadens the range of x for high H_c from 49∼55 to 43∼55. Interestingly, with Bi underlayer, the high H_c is affected by x to a less extent. PACS 75.50.Ss; 75.50.Vv; 75.60.Ej     

掺磷TiO_2优化TiO_2/MBA/Ag三明治结构的SERS性能

本文以磷酸为磷源,通过溶胶水热法制备磷掺杂TiO_2,利用Lee和Meisel的方法制备银溶胶,以4-巯基苯甲酸(MBA)为探针分子,通过构建TiO_2/MBA/Ag三明治结构,研究磷掺杂二氧化钛对该基底表面增强拉曼(SERS)性能的提升。通过TEM、XRD、XPS、DRS和拉曼光谱图表征二氧化钛的形貌结构、化学组成、光学和拉曼性能,结果表明,制备出的磷掺杂二氧化钛为锐钛矿型纳米颗粒,粒径范围6~12nm,XPS显示磷以P~(5+)替代了Ti~(4+),形成O-P-O键掺入TiO_2的晶格中,当磷的掺杂量在1.77%时,TiO_2/MBA/Ag三明治体系具有最佳的SERS信号,这是因为适量的磷掺杂降低了TiO_2的能带间隙,丰富TiO_2的表面态,这能促进TiO_2向MBA分子的电荷转移。     

高压下ZnS的电子结构和性质

运用密度泛函理论体系下的平面波赝势(PWP)和广义梯度近似(GGA)方法，计算研究了闪锌矿结构的ZnS晶体在不同的外界压强下的电子结构. 通过分析发现，随着外界压强的增大，晶格常数和键长在不断缩小，从S原子向Zn原子转移的电荷越来越少，Zn—S键的共价性逐渐增强，Zn原子和S原子的态密度都有不同程度的变化，而且还有向低能量移动的趋势. 当外界压强达到24GPA时，ZnS从直接带隙半导体变成间接带隙半导体，而且随着压强的增大，间接带隙逐渐变小，直接带隙逐渐增大. 关键词： 闪锌矿结构 态密度 能带结构 密度泛函理论