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61.
Le Flohic M. Franchois P.-L. Allain J.-Y. Sanchez F. Stephan G.M. 《Quantum Electronics, IEEE Journal of》1991,27(7):1910-1921
The two-stage process of the transient buildup of emission in Nd 4+-doped fiber lasers is described both experimentally and theoretically. After switching on the pump, spontaneous emission increases first until the gain becomes sufficient to compensate for the cavity losses; the laser field then develops and reaches the steady state after more or less regular oscillations. During this second stage, an almost chaotic spiking is obtained either for high pumping rates and/or at low temperatures. The whole set of these dynamical scenarios is not described under the usual assumptions of uniform cavity losses over the whole field spectrum and of pure homogeneous broadening for the transition line, but rather a modified form of the Maxwell-Bloch equations which retains some frequency dependence for the losses in the cavity and the inhomogeneous broadening as well is proposed 相似文献
62.
This paper presents a new method, based on a multi-agent system and on a digital mock-up technology, to assess an efficient path planner for a manikin or a robot for an access and visibility task taking into account ergonomic constraints or joint and mechanical limits. In order to solve this problem, the human operator is integrated in the process optimization to contribute to a global perception of the environment. This operator cooperates, in real time, with several automatic local elementary agents. The result of this work validates solutions through the digital mock-up; it can be applied to simulate maintainability and mountability tasks. 相似文献
63.
Evaluation of diffusion barrier integrity is an important issue in advanced interconnects. A diffusion barrier separating Cu from low-k must be as thin as possible and must not contain pinholes. We have developed a method for measuring pinhole density in diffusion barriers deposited on low-k materials. The method employs ellipsometric porosimetry for measuring diffusion of toluene in a porous low-k film beneath the barrier in question. 相似文献
64.
M. Le Pallec C. Kazmierski E. Vergnol S. Perrin J.G. Provost P. Doussiere G. Glastre D. Carpentier S. Fabre 《Photonics Technology Letters, IEEE》2003,15(3):362-364
Integrated laser modulators are attractive devices for wavelength-division-multiplexing optical systems due to their compactness, high output power, and low cost. Their fabrication simplicity is a way to decrease further the transmitter cost and address new opening markets of short range and metropolitan networks. We report a new integration scheme electroabsorption-modulator distributed feedback (DFB) laser based on well-established industrial solutions for discrete buried ridge (BRS) DFB lasers and discrete shallow ridge modulators. Processing simplification with an identical active layer has been possible due to a good behavior of strongly positively detuned BRS lasers. The integrated devices demonstrated 30-dB extinction ratio with 10-GHz bandwidth and P/sub out/=10 dBm for emission in 1.55-/spl mu/m range. 相似文献
65.
Chepoi showed that every breadth first search of a bridged graph produces a cop-win ordering of the graph. We note here that Chepoi's proof gives a simple proof of the theorem that G is bridged if and only if G is cop-win and has no induced cycle of length four or five, and that this characterization together with Chepoi's proof reduces the time complexity of bridged graph recognition. Specifically, we show that bridged graph recognition is equivalent to (C4,C5)-free graph recognition, and reduce the best known time complexity from O(n4) to O(n3.376). 相似文献
66.
D. T. Le C. P. Morath H. E. Norton D. A. Cardimona S. Raghavan P. Rotella S. A. Stintz B. Fuchs S. Krishna 《Infrared Physics & Technology》2003,44(5-6):517-526
In this paper we report studies on normal incidence, InAs/In0.15Ga0.85As quantum dot infrared photodetectors (QDIPs) in the dots-in-a-well (DWELL) configuration. Three QDIP structures with similar dot and well dimensions were grown and devices were fabricated from each wafer. Of the three devices studied, the first served as the control, the second was grown with an additional 400 Å AlGaAs blocking layer, and the third was grown on a GaAs n+ substrate with the intention of testing a single pass geometry. Spectral measurements on all three devices show one main peak in the long-wave IR (≈8 μm). The absorption was attributed to the bound-to-bound transition between the ground state of the InAs quantum dot and the ground state of the In0.15Ga0.85As well. Calibrated peak responsivity and peak detectivity measurements were performed on each device at 40, 60, and 80 K. For the same temperatures, frequency response measurements from 20 Hz to 4 kHz at a bias of Vb=−1 V were also performed. The addition of the blocking layer was shown to slightly enhance responsivity, which peaked at 2.4 A/W at 77 K, Vb=−1 V and responsivity was observed to be significantly reduced in the single pass (n+ substrate) sample. The rolloff of the frequency response was observed to be heavily dependent on temperature, bias, and irradiance. The results from the characterization of each sample are reported and discussed. 相似文献
67.
本文运用信息保存法对低速二维的流动现象进行模拟,考察了低速条件下的有限平板绕流以及微槽道气体流动问题。研究表明:在对低速流动的模拟过程中,运用IP法在能够获得较好的结果的同时,具有比DSMC方法更高的计算效率。 相似文献
68.
There are several fuelling methods for tokamak plasma: pellet injection (PI), gas puffing (GP), neutral beam injection (NBI) and supersonic molecular beam injection (SMBI) .SMBI has been created in the Southwestern Institute of Physics, China. 相似文献
69.
The frequency or dispersion relation for the least‐squares mixed formulation of the shallow‐water equations is analysed. We consider the use of different approximation spaces corresponding to co‐located and staggered meshes, respectively. The study includes the effect of Coriolis, and the dispersion properties are compared analytically and graphically with those of the mixed Galerkin formulation. Numerical solutions of a test problem to simulate slow Rossby modes illustrate the theoretical results. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
70.
The reactions of IO radicals with CH3SCH3, CH3SH, C2H4, and C3H6 have been studied using the discharge flow method with direct detection of IO radicals by mass spectrometry. The absolute rate constants obtained at 298 K are the following: IO + CH3SCH3 → products (1): k1 = (1.5 ± 0.2) × 10?14; IO + CH3SH → products (2): k2 = (6.6 ± 1.3) × 10?16; IO + C2H4 →products (3): k3 < 2 × 10?16; IO + C3H6 → products (4): k4 < 2 × 10?16 (units are cm3 molecule?1 s?1). CH3S(O)CH3 and HOI were found as products of reactions (1) and (2), respectively. The present lower value of k1 compared to our previous determination is discussed. 相似文献