Genetic algorithms: concepts and applications [in engineeringdesign]

This paper introduces genetic algorithms (GA) as a complete entity, in which knowledge of this emerging technology can be integrated together to form the framework of a design tool for industrial engineers. An attempt has also been made to explain “why” and “when” GA should be used as an optimization tool     

MOS控制晶闸管的三重扩散工艺研究

本文对ＭＣＴ的核心工艺－三重扩散工艺进行了详细研究。通过ＳＵＰＲＥＭ－Ⅲ计算机工艺仿真，获得了三重扩散的工艺条件。     

Triangular ray-tube analysis of dielectric lens antennas

A new method of analysis for the radiation characteristics of dielectric lens antennas with arbitrary inner and outer surfaces is presented. The analysis is based on representing the feed illumination by a contiguous set of ray tubes and including the effects of surface reflections and ray divergence. Radiation patterns and the antenna gain are then computed by evaluating the closed-form expressions developed for the Kirchhoff's integral of the aperture fields. The validity of the analysis method has been demonstrated by comparing the computations with measured results of two different spherical lenses and a shaped lens configurations. The analysis method presented takes into account some of the practical aspects associated with lens design such as surface zoning to reduce the mass and surface matching to minimize the reflection loss     

结构振动控制中压电阻尼技术研究：（三）机敏约束层阻尼技术

给出了机敏约束阻尼概念，阐述了机敏约束层阻尼系统特征，分析了结构设计和系统建模方法。以典型梁系统为例，比较了被动约束阻尼技术和机敏约束层阻尼技术减振效果。结果表明；机敏约束层阻尼控制技术是一种更为有效的振动控制方法。最后，提出了今后重点研究问题。     

高功率激光焊接光致等离子体的检测

系统地归纳了高功率激光焊接过程中光致等离子体的声、光、电、热等四种特征信号，综述了国外在等离子体信号检测方面的试验方法及研究进展，分析了未来的发展趋势     

Control of the block copolymer morphology in templated epoxy thermosets

It has been found that by the addition of low concentrations of an amphiphilic block copolymer to an epoxy resin, novel disordered morphologies can be formed and preserved through curing. This article will focus on characterizing the influence of the block copolymer and casting solvent on the templated morphology achieved in the thermoset sample. The ultimate goal of this work is to determine the parameters that would control the microphase morphology produced. Epoxy resins blended with a series of amphiphilic block copolymers based on hydrogenated polyisoprene (polyethylene-alt-propylene or PEP) and polyethylene oxide (PEO), specifically, were investigated. In this article, the cure-induced order–order phase transition from the spherical to wormlike micelle morphology will also be discussed. It is proposed that the formation of the wormlike micelle structure from the spherical micelle structure is similar to the phase transition behavior that occurs in dilute block copolymer solutions as a function of the influence of the solvent on micelle morphology. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 3338–3348, 2007     

碳纳米管及其批量制备研究进展

从碳纳米管的优异性能和应用出发,综述了碳纳米管的制备方法以及我国目前在碳纳米管研究中面临的问题;分析了碳纳米管产业化对的我国纳米技术产业化发展的积极意义,特别介绍了清华-南风纳米粉体产业化工程中心开发的、具有我国自主知识产权的纳米聚团流态化技术。     

Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

The effects of Si doping on the structural and electrical properties of Ge₂Sb₂Te₅ film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge₂Sb₂Te₅ film. The addition of Si in the Ge₂Sb₂Te₅ film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge₂Sb₂Te₅ film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge₂Sb₂Te₅ film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory.     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.