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71.
Masaharu Asano Jinhua Chen Yasunari Maekawa Takahiro Sakamura Hitoshi Kubota Masaru Yoshida 《Journal of polymer science. Part A, Polymer chemistry》2007,45(13):2624-2637
A novel process comprising the UV‐induced photografting of styrene into poly(tetrafluoroethylene) (PTFE) films and subsequent sulfonation has been developed for preparing proton‐conducting membranes. Although under UV irradiation the initial radicals were mainly generated on the surface of the PTFE films by the action of photosensitizers such as xanthone and benzoyl peroxide, the graft chains were readily propagated into the PTFE films. The sulfonation of the grafted films was performed in a chlorosulfonic acid solution. Fourier transform infrared and scanning electron microscopy were used to characterize the grafted and sulfonated membranes. With a view to use in fuel cells, the proton conductivity, water uptake, and mechanical properties of the prepared membranes were measured. Even through the degree of grafting was lower than 10%, the proton conductivity in the thickness direction of the newly prepared membranes could reach a value similar to that of a Nafion membrane. In comparison with γ‐ray radiation grafting, UV‐induced photografting is very simple and safe and is less damaging to the membranes because significant degradation of the PTFE main chains can be avoided. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 2624–2637, 2007 相似文献
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74.
Baowei Qiao Jie Feng Yun Ling Ting’ao Tang Bomy Chen 《Applied Surface Science》2006,252(24):8404-8409
The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fcc) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 °C annealing increases from 1 to 11 mΩ cm compared to the undoped Ge2Sb2Te5 film. Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. 相似文献
75.
Ling-yan Tang Song-he Song 《应用数学学报(英文版)》2007,23(2):303-310
In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities. 相似文献
76.
Jian‐guo Tang 《Mathematical Methods in the Applied Sciences》2006,29(11):1327-1338
An implicit iterative method is applied to solving linear ill‐posed problems with perturbed operators. It is proved that the optimal convergence rate can be obtained after choosing suitable number of iterations. A generalized Morozov's discrepancy principle is proposed for the problems, and then the optimal convergence rate can also be obtained by an a posteriori strategy. The convergence results show that the algorithm is a robust regularization method. Copyright © 2006 John Wiley & Sons, Ltd. 相似文献
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In this letter, we conduct analysis on the optimum design for RF-to-optical up-converter in coherent optical OFDM systems using an optical I/Q modulator. We first derive closed-form expressions for the nonlinearity in the optical I/Q modulator, represented by two-tone intermodulation products as a function of the bias point and modulation index. Additionally, we perform a numerical simulation to identify Q-penalty and the excess modulation insertion loss under various transmitter conditions. We find that in contrast to the direct-detected system, the optimal modulator bias point for the coherent system is pi, where the Q-penalty and excess loss are minimized 相似文献
79.
Huazhong Tang Tao Tang Kun Xu 《Zeitschrift für Angewandte Mathematik und Physik (ZAMP)》2004,55(3):365-382
In this paper, the Kinetic Flux Vector Splitting (KFVS)
scheme is extended to solving the shallow water equations with
source terms. To develop a well-balanced scheme between the source
term and the flow convection, the source term effect is accounted
in the flux evaluation across cell interfaces. This leads to a
modified gas-kinetic scheme with particular application to the
shallow water equations with bottom topography. Numerical
experiments show better resolution of the unsteady solution than
conventional finite difference method and KFVS method with little
additional cost. Moreover, some positivity properties of the
gas-kinetic scheme is established. 相似文献
80.