氟气-清洗化学气相沉积反应器腔室的创新方式

对于将氟气应用在化学气相沉积器清洗的应用而言,其安全性、稳定性、纯度和价格,在应用上是一个新的挑战.对一般气相沉积反应器清洗而言,一体化氟气供应策略,对寻求低价取代方案的使用者而言,是最安全和稳定的供应方式.     

Achieving High‐Performance Nondoped OLEDs with Extremely Small Efficiency Roll‐Off by Combining Aggregation‐Induced Emission and Thermally Activated Delayed Fluorescence

Luminescent materials with thermally activated delayed fluorescence (TADF) can harvest singlet and triplet excitons to afford high electroluminescence (EL) efficiencies for organic light‐emitting diodes (OLEDs). However, TADF emitters generally have to be dispersed into host matrices to suppress emission quenching and/or exciton annihilation, and most doped OLEDs of TADF emitters encounter a thorny problem of swift efficiency roll‐off as luminance increases. To address this issue, in this study, a new tailor‐made luminogen (dibenzothiophene‐benzoyl‐9,9‐dimethyl‐9,10‐dihydroacridine, DBT‐BZ‐DMAC) with an unsymmetrical structure is synthesized and investigated by crystallography, theoretical calculation, spectroscopies, etc. It shows aggregation‐induced emission, prominent TADF, and interesting mechanoluminescence property. Doped OLEDs of DBT‐BZ‐DMAC show high peak current and external quantum efficiencies of up to 51.7 cd A^?1 and 17.9%, respectively, but the efficiency roll‐off is large at high luminance. High‐performance nondoped OLED is also achieved with neat film of DBT‐BZ‐DMAC, providing excellent maxima EL efficiencies of 43.3 cd A^?1 and 14.2%, negligible current efficiency roll‐off of 0.46%, and external quantum efficiency roll‐off approaching null from peak values to those at 1000 cd m^?2. To the best of the authors' knowledge, this is one of the most efficient nondoped TADF OLEDs with small efficiency roll‐off reported so far.     

A study on photo-induced intramolecular electron-transfer in fullerene-benzothiadiazole-triphenylamine using time-dependent density functional theory

We employed first-principle calculations to study the photo-induced electron transfer (PIET) process of a fullerene-benzothiadiazole-triphenylamine (C60-BTD-TPA), fullerene-diphenylbenzothiadiazole-triphenylamine (C60-PBTD-TPA), and fullerene-triphenylamine (C60-TPA). The ground state geometries of C60-BTD-TPA, C60-PBTD-TPA, and C60-TPA were optimized using density functional theory (DFT). Their excited states were investigated using time-dependent HF, and time-dependent DFT (TDDFT) methods. The long-range corrected CAM-B3LYP functional was found to give the best agreements with the experimentally observed transition energies. CAM-B3LYP-based wave functions were also employed to calculate the charge transfer integrals using generalized Mulliken–Hush (GMH) approach, and the photo-induced charge separation (k_CS) and charge recombination rate constants (k_CR) were calculated using Marcus theory. The results showed the calculated k_CS and observed k_CS of C60-PBTD-TPA and C60-TPA correspond to each other, however, the both of C60-BTD-TPA differ by two orders of magnitude. For k_CR of these compounds, the calculated and observed values were more contrary to each other due to improper application of Marcus electron-transfer theory.     

外推技术结合矩量法应用于二维介质柱RCS计算

基于Richardson外推(Extrapolation)提出了一种提高精度和快速计算任意二维介质柱体的雷达散射截面(RCS)外推技术和矩量法(MOM)相结合的方法(RE—MOM)。首先用二层粗细有序网格对介质柱体截面剖分。接着采用矩量法对相应二维介质柱体的电场积分方程求解，得到介质体在某一平面入射波照射下各自的电场向量，通过外推技术获得介质柱体在这一人射波照射下细网格上高精度的电场向量，进而计算出RCS。文中计算了几个例子，并与其他数值计算方法进行了比较，结果表明RE—MOM方法是正确和有效的。     

基于SOI材料的刻蚀光栅分波器的制作工艺

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．     

蓝宝石衬底上水平生长ZnO纳米线及紫外敏感性能研究

在无催化剂条件下,采用化学气相沉积(CVD)方法在蓝宝石(110)衬底上制备了ZnO纳米线.X射线衍射(XRD)图谱上只有ZnO的(100)衍射峰和(110)衍射峰.扫描电子显微镜分析表明,ZnO纳米线在蓝宝石衬底上水平生长.在样品上蒸镀了金叉指电极,以256nm的紫外光作为光源,测试了样品的紫外光敏感性能,研究表明水平生长的ZnO纳米线对紫外光具有较快的响应,在5V偏压下,光电流与暗电流比为30;当波长为354nm时光响应度达到最大值为0.56A/W.     

基于副载波复用的多输入单输出正交频分复用LED可见光通信系统

提出了一种基于副载波复用的新型的多输入单输出(MISO)正交频分复用可见光通信(OFDM-VLC)系统构架,并且实验验证了2×1和3×1的MISO OFDM-VLC系统传输。分别测量了2×1和3×1的实验系统的误差矢量幅度(EVM)随输入电压变化的曲线图,找出了两个系统各自的最佳偏置范围。在将输入电压设置在最佳偏置范围之内的情况下,改变传输距离,对2×1系统,给出了系统EVM性能变化的曲线图;对3×1系统,给出了系统EVM和误码率(BER)性能变化的曲线图。在没有任何均衡的情况下,两个系统的传输距离都可以长达140cm。     

应变In0.20 Ga0.80As／GaAs单量子阱结构的光谱研究

报道了用光致发光光谱，吸收光谱和光电流谱研究具有相同组伊阱宽，不同覆盖层厚度的应变Ｉｎ０．２０Ｇａ０．８０Ａｓ／ＧａＡｓ单量子阱结构的实验结果，结果理论计算，观察到ＧａＡｓ覆盖层厚度对单量子阱结构的材料质量，应力驰豫和发光淬灭机制的影响，确定了各样品应变值和导带不连续因子Ｑｃ，并讨论了这种结构发光机制。     

基于低压高精度运放的带隙基准电压源设计

基于传统带隙基准源的电路结构,采用电平移位的折叠共源共栅输入级和甲乙类互补推挽共源输出级改进了其运算放大器的性能,并结合一阶温度补偿、电流负反馈技术设计了一款低温度系数、高电源电压抑制比(PSRR)的低压基准电压源。利用华润上华公司的CSMC 0.35μm标准CMOS工艺对电路进行了Hspice仿真,该带隙基准源电路的电源工作范围为1.5～2.3 V,输出基准电压为(600±0.2)mV;工作温度为10～130℃,输出电压仅变化8μV,温度系数为1.86×10-6/℃,低频时PSRR为-72 dB。实际流片进行测试,结果表明达到了预期结果。     

蒙特卡罗法单晶硅的腐蚀工艺表面微观形态仿真研究

讨论了基于蒙特卡罗法模拟各向异性腐蚀加工的微观表面形态的仿真方法. 应用台阶流动模型,分析了(h,k,l)晶面中(h+2,h,h), (h,1,1), (h+2,h+2,h)以及(h,h,1)晶面族上反应活跃的台阶部位原子的排列特征,结合微掩模的作用和定义方法,提出了通过限制各晶面族台阶部位广泛存在的一级、二级邻居数为(3,7)原子移除概率的方法来模拟快速反应区域的吸附抑制现象. 把上述内容应用于RPF函数对(100)面的凸起结构,(110)面的带状条纹以及(111)面的三角形凹陷微观结构进行了仿真计算,解释了腐蚀中微观形貌的特征和成因. 算法在3种基础晶面和高指数 (322) 晶面的计算结果能够很好地符合实验中观察到的表面形态微观特征,验证了方法的有效性.