Reactivity of 3-alkyl-4-arylazomethylene-3,4-dihydro-1,2,3-benzotriazines in protic solvents: 1,4-Addition reactions and dimroth rearrangement

3-Alkyl-4-arylazomethylene-3,4-dihydro-1,2,3-benzotriazines 5a and 5b undergo facile 1,4-addition of methanol or ethanol to afford stable crystalline hydrazones, 6 and 8 which have been characterised by spectroscopic analysis. In particular, the nmr spectrum of 8 shows novel features due to the diastereotopic nature of the CH₂ protons in the two O-ethyl groups. Compound 5b shows a property unique to the compounds in this series; refluxing this arylazomethylenetriazine in ethanol affords a rearranged product, characterised as the 1-aryl-2-cinnolinylhydrazine ( 9 ). The formation of 9 is rationalised as a ring opening-ring closure process analogous to the Dimroth rearrangement. The cinnoline 9 displays some novel chemistry arising from the facility of the arylhydrazino substituent to react with acid to give a fragmentation product, 3-methylindazole ( 7 ).     

液态铅的电阻率

采用精确的结构因数实验数据和Ｂｅｈａｖｉ模型赝势，用Ｚｉｍａｎ理论计算了液态铅的电阻率．计算结果和实验数据符合很好．讨论了Ｚｉｍａｎ理论对液态铅的适用性以及适合于液态铅的赝势的特征．     

服装主观热感觉的统计分析

本文用多因子方差分析模型和多重比较分析了服装穿着时的主观热感觉与服装品种、环境条件、穿着者的活动状态与籍贯之间的关系。通过主成分回归建立了用生理指标预测主观热感觉的模型，从而得出一种定量地评价服装属性的方法。     

Synchronized chaotic optical communications at high bit rates

Basic issues regarding synchronized chaotic optical communications at high bit rates using semiconductor lasers are considered. Recent experimental results on broadband, high-frequency, phase-locked chaos synchronization, and message encoding-decoding at 2.5 Gb/s are presented. System performance at a bit rate of 10 Gb/s is numerically studied for the application of three encryption schemes, namely chaos shift keying, chaos masking, and additive chaos modulation, to three chaotic semiconductor laser systems, namely the optical injection system, the optical feedback system, and the optoelectronic feedback system. By causing synchronization error in the forms of synchronization deviation and desynchronization bursts, the channel noise and the laser noise both have significant effects on the system performance at high bit rates. Among the three laser systems, the optoelectronic feedback system has the best performance while the optical feedback system has the worst. Among the three encryption schemes, only the performance of additive chaos modulation with low-noise lasers is acceptable at high bit rates.     

腔靶等离子体辐射温度空间分布测量

本文描述了用膜吸收法测量激光等离子体辐射温度空间分布的原理和方法给出了柱形缝靶轴向辐射温度随空间位置变化的特征,对测量结果进行了分析讨论。     

超软X射线流气式正比计数管

介绍了一种用于测量183～933eV超软X射线的圆柱形、侧窗式、流气式正比计数管,工作气体是0.11MPa的P-10气体或氦气-丙烷混合气体。计数管内径为φ25mm,直径为φ0.3mm的入射窗是由厚度80～90μgcm~2聚乙烯甲醛制成的。该计数管的特点:(1)薄窗,对软X射线透过率高。(2)流气式,工作寿命长。(3)能量分辨率好。(4)计数率高(1×10~(14)个/s)。(5)可测能区宽(0.183～10keV)。(6)可以方便更换窗膜材料、厚度及窗口直径。近几年来该计数管已经为高强度低能X光源提供较好监测。     

光纤机敏结构制作方法的研究

本文讨论机敏结构的制作方法、集成光纤传感器存在的问题、现有解决方法和今后的研究方向。     

行为级DSP算法描述的阵列处理器综合方法研究

本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。     

High performance CMOS current comparator

A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source