基于HRTEM和Raman分析定向多壁碳纳米管阵列的生长机理

以二茂铁、二甲苯为前驱体,石英为衬底,在850 oC的管式炉内采用化学气相沉积法制备出了定向碳纳米管阵列. 高分辨透射电子显微镜和拉曼光谱的结果表明：碳纳米管阵列具有良好的定向性和多壁管状结构,石墨化程度高,并且只在表面存在少量单壁碳纳米管.定向多壁碳纳米管阵列的生长模式为“底部”生长模式,即在生长的初期,当催化剂颗粒较小时,析出的碳原子生成了单壁碳纳米管或与其性质类似的多壁碳纳米管(一般层数小于5层);催化剂颗粒逐渐长大后,大量的碳原子析出后生成了普通的多壁碳纳米管,从而形成了单壁碳纳米管只存在于碳纳米管阵列膜表面和多层碳纳米管膜表面与界面的现象.     

Optimum step-stress accelerated degradation test for Wiener degradation process under constraints

To assess a product's reliability for subsequent managerial decisions such as designing an extended warranty policy and developing a maintenance schedule, Accelerated Degradation Test (ADT) has been used to obtain reliability information in a timely manner. In particular, Step-Stress ADT (SSADT) is one of the most commonly used stress loadings for shortening test duration and reducing the required sample size. Although it was demonstrated in many previous studies that the optimum SSADT plan is actually a simple SSADT plan using only two stress levels, most of these results were obtained numerically on a case-by-case basis. In this paper, we formally prove that, under the Wiener degradation model with a drift parameter being a linear function of the (transformed) stress level, a multi-level SSADT plan will degenerate to a simple SSADT plan under many commonly used optimization criteria and some practical constraints. We also show that, under our model assumptions, any SSADT plan with more than two distinct stress levels cannot be optimal. These results are useful for searching for an optimum SSADT plan, since one needs to focus only on simple SSADTs. A numerical example is presented to compare the efficiency of the proposed optimum simple SSADT plans and a SSADT plan proposed by a previous study. In addition, a simulation study is conducted for investigating the efficiency of the proposed SSADT plans when the sample size is small.     

Excellent passivation of thin silicon wafers by HF‐free hydrogen plasma etching using an industrial ICPECVD tool

In this work, hydrogen plasma etching of surface oxides was successfully accomplished on thin (～100 µm) planar n‐type Czochralski silicon wafers prior to intrinsic hydrogenated amorphous silicon [a‐Si:H(i)] deposition for heterojunction solar cells, using an industrial inductively coupled plasma‐enhanced chemical vapour deposition (ICPECVD) platform. The plasma etching process is intended as a dry alternative to the conventional wet‐chemical hydrofluoric acid (HF) dip for solar cell processing. After symmetrical deposition of an a‐Si:H(i) passivation layer, high effective carrier lifetimes of up to 3.7 ms are obtained, which are equivalent to effective surface recombination velocities of 1.3 cm s^–1 and an implied open‐circuit voltage (V_oc) of 741 mV. The passivation quality is excellent and comparable to other high quality a‐Si:H(i) passivation. High‐resolution transmission electron microscopy shows evidence of plasma‐silicon interactions and a sub‐nanometre interfacial layer. Using electron energy‐loss spectroscopy, this layer is further investigated and confirmed to be hydrogenated suboxide layers. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The evolution of polarization inside ultrathin PbTiO3 films: a theoretical study

How to control the material properties by manipulating the unitcell thickness is crucial for applications of ferroelectric ultrathin films. To understand the polarization behaviour of ultrathin PbTiO₃ (PTO) films grown on SrTiO₃ (STO) substrate, we have systematically explored the strength and direction of polarization in each unitcell layer, using density functional theory combined with Born effective charge method. Strikingly, we find that the polar state of ultrathin PTO films is a composite result depending not only on thickness but also on boundary condition, initial polarization direction, etc. Besides, we also studied the surface effect on the polarization in the thicker PTO films for comparison with the ultrathin ones, which suggests that the surface effect is basically confined in a small range (3–5 unitcells thick at surface region) no matter what kinds of surface terminations and polarization directions.     

Synthesis and electrochemical properties of regular hexahedron α-Fe2O3

Synthesis of α-Fe₂O₃ compound with regular hexahedron shape is firstly reported. X-ray diffraction and scan electron microscope are used to characterize the structure and morphology of the prepared sample, respectively. The average edge length of hexahedron is about 0.9 μm. A reaction mechanism has been proposed. The pH value is a crucial factor for the formation and shape of α-Fe₂O₃. Moreover, electrochemical impedance spectroscopy and charge-discharge test of α-Fe₂O₃ as anode material in lithium ion batteries are evaluated. The data indicate that the synthesized regular hexahedron α-Fe₂O₃ can show better electrochemical properties than that of the commercial.     

Ordered Mesoporous Carbon and Thiolated Polyaniline Modified Electrode for Simultaneous Determination of Cadmium(II) and Lead(II) by Anodic Stripping Voltammetry

The fabrication and evaluation of a glassy carbon electrode (GCE) modified with ordered mesoporous carbon (OMC), 2‐mercaptoethanesulfonate (MES)‐tethered polyaniline (PANI) and bismuth for simultaneous determination of trace Cd²⁺ and Pb²⁺ by differential pulse anodic stripping voltammetry (DPASV) are presented here. The morphology and electrochemical properties of the fabricated electrode were respectively characterized by scanning electron microscopy (SEM) and electrochemical impedance spectroscopy (EIS). Experimental parameters such as PANI disposition, preconcentration potential, preconcentration time and bismuth concentration were optimized. Under optimum conditions, the fabricated electrode exhibited linear calibration curves ranged from 1 to 120 nM for Cd²⁺ and Pb²⁺. The limits of detection (LOD) were 0.26 nM for Cd²⁺ and 0.16 nM for Pb²⁺ (S/N=3), respectively. Additionally, repeatability, reproducibility, interference and application were also investigated, and the proposed electrode exhibited excellent performance. The proposed method could be extended for the development of other new sensors for heavy metal determination.     

Computational design of tetrahedral silsesquioxane-based porous frameworks with diamond-like structure as hydrogen storage materials

A novel type of three-dimensional (3D) tetrahedral silsesquioxane-based porous frameworks (TSFs) with diamond-like structure was computationally designed using the density functional theory (DFT) and classical molecular mechanics (MM) calculations. The hydrogen adsorption and diffusion properties of these TSFs were evaluated by the methods of grand canonical Monte Carlo (GCMC) and molecular dynamics (MD) simulations. The results reveal that all designed materials possess extremely high porosity (87–93 %) and large H₂ accessible surface areas (5,268–6,544 m² g^?1). Impressively, the GCMC simulation results demonstrate that at 77 K and 100 bar, TSF-2 has the highest gravimetric H₂ capacity of 29.80 wt%, while TSF-1 has the highest volumetric H₂ uptake of 65.32 g L^?1. At the same time, the gravimetric H₂ uptake of TSF-2 can reach up to 4.28 wt% at the room temperature. The extraordinary performances of these TSF materials in hydrogen storage made them enter the rank of the top hydrogen storage materials so far.     

Theoretical studies on the penta-atomic planar coordinate carbon molecules [CGa3Sn] and [CGa3Sn]−

The pentaatomic [CGa₃Sn] and [CGa₃Sn]^? species were studied via density functional theory (DFT). Six planar geometry isomeric structures were gained, and one of them exists tetracoordinate planar carbon atom, respectively. To gain a better understanding about which electronic factors contribute to the stabilization of tetracoordinate planar carbon structures, natural bond orbital (NBO) analysis and the nucleus independent chemical shifts (NICS) were calculated. This analysis suggests that the presence of 18 valence electrons is crucial for planar geometries to be stable and preferred over tetrahedral structures.