The visible and ultraviolet organic light-emitting diodes with germanium dioxide as facile solution-processed anode buffer layer

Germanium dioxide (GeO₂) aqueous solutions are facilely prepared and the corresponding anode buffer layers (ABLs) with solution process are demonstrated. Atomic force microscopy, X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy measurements show that solution-processed GeO₂ behaves superior film morphology and enhanced work function. Using GeO₂ as ABL of organic light-emitting diodes (OLEDs), the visible device with tris(8-hydroxy-quinolinato)aluminium as emitter gives maximum luminous efficiency of 6.5 cd/A and power efficiency of 3.5 lm/W, the ultraviolet device with 3-(4-biphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole as emitter exhibits short-wavelength emission with peak of 376 nm, full-width at half-maximum of 42 nm, maximum radiance of 3.36 mW/cm² and external quantum efficiency of 1.5%. The performances are almost comparable to the counterparts with poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) as ABL. The current, impedance, phase and capacitance as a function of voltage characteristics elucidate that the GeO₂ ABL formed from appropriate concentration of GeO₂ aqueous solution favors hole injection enhancement and accordingly promoting device performance.     

贴片机脱机编程的快捷方法

SMT生产线中的大多数加工设备均为数控设备。它们编程所需要的大多数特征数据均可从CAD设计系统中得到。文章介绍了如何从CAD设计系统中导出X、Y坐标数据,并转换成贴片数据的方法和思路,以期引起更多的同行加入到这方面的研究中。     

工作流技术及其应用研究

文章介绍了工作流技术及其发展历史,对工作流的系统模型进行了详细分析,探讨了工作流技术在企业管理信息系统中的实际应用。     

基于"层"模式的双机容错系统

容错技术广泛应用于各个行业来保证系统的冗余和可靠性。文章在分析比较当前的双机容错系统的性能优缺点后,提出了一种全新的基于“层”模式的双机容错系统解决方案。按照这种模式,可以从链路层到应用层构建一个通用的系统级的双机容错系统。文章对其实现的关键技术进行了阐述。     

一种PD雷达动目标模拟与微波测控系统

介绍了一种基于PC／104总线，具有GPIB程控功能，采用无内部微波源体制，通过在雷达载频上调制多普勒频率模型目标速度信息，延迟雷达发射机触发脉冲模拟目标距离信息并具有微波功率精确定标与衰减功能的PD雷达动目标模拟与微波测控系统。     

嵌入式GPS车载系统定位数据压缩算法的实现

根据嵌入式系统的特征，分析数据压缩模型工作原理，结合GPS定位数据的格式和特点，创造性地提出了嵌入式GPS定位数据的实时压缩的新算法，并通过模拟仿真得到验证，效果显著。     

Temperature effects on surface activity and application in oxidation of toluene derivatives of CTAB-SDS with KMnO4

The γ_cmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS. Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives by increasing the contact between two reacting phases.     

M16C/62P在液晶电视制造中的应用

本文介绍M16C平台在先进的数字液晶电视技术以及硬件配置和软件算法方面的作用，同时也将讨论其他的LSI。此外，也为电视制造商用于26英寸或以上液晶电视提供主要解决方案。     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.