高电荷态Ar^q＋与Ne碰撞中入射离子电荷交换截面的研究

报道Ar^q Ne(q=8，9，11，12)碰撞体系中多电子转移过程，得到了多组实验测量电荷交换截面数据，讨论入射离子电荷交换截面、反冲离子产生截面与入射离子电荷态、能量以及散射离子电荷态的关系，并且将实验结果与Ar^q Ar碰撞体系进行对比研究。在修正分子库仑过垒模型的基础上，对实验现象做了合理的解释。     

Closed-loop optimal control-enabled piezoelectric microforce sensors

This paper presents a closed-loop optimally controlled force-sensing technology with applications in both micromanipulation and microassembly. The microforce-sensing technology in this paper is based on a cantilevered composite beam structure with embedded piezoelectric polyvinylidene fluoride (PVDF) actuating and sensing layers. In this type of sensor, the application of an external load causes deformation within the PVDF sensing layer. This generates a signal that is fed through a linear quadratic regulator (LQR) optimal servoed controller to the PVDF actuating layer. This in turn generates a balancing force to counteract the externally applied load. As a result, a closed feedback loop is formed, which causes the tip of this highly sensitive sensor to remain in its equilibrium position, even in the presence of dynamically applied external loads. The sensor's stiffness is virtually improved as a result of the equilibrium position whenever the control loop is active, thereby enabling accurate motion control of the sensor tip for fine micromanipulation and microassembly. Furthermore, the applied force can be determined in real time through measurement of the balance force.     

Virtual environments for Internet-based robots. I. Modeling a dynamic environment

In the context of using virtual environments (VEs) in Internet-based teleoperation, this paper addresses the issue of parameter acquisition for single-image-based modeling of VEs. By studying the properties of basic three-dimensional features such as point sets and edge corners, a parameter-searching method was developed that employs virtual objects as feature-matching templates. This approach is particularly valuable if the environment is subject to unpredictable change.     

纳米β-Ni(OH)2与球型Ni(OH)2的热性能比较研究

用配位沉淀法合成出纳米级Ni（OH）2，并对其进行XRD，TEM，DSC分析，分析结果表明，所得纳米β-Ni（OH）2为可用作电极材料的β-Ni（OH）2，粒径为30－40nm，且热分解温度比普通球镍低10℃左右，摩尔分解热比普通球镍低4－7kJ，从理论上分析了产生此现象的原因。     

分割电极片状压电致动器——(二)位移特性及狭缝宽度对其影响的实验研究

研究了悬臂梁式分割电极片状压电致动器的位移特性。理论分析表明，分割电极狭缝宽度会减小致动器自由端的位移输出，但当狭缝宽度小于致动器电极宽度的１０％时，可忽略狭缝宽度的影响。致动器端部位移的测试结果大于理论计算值。与现有磁头悬浮臂尺寸相近的致动器，在２０Ｖ～５０Ｖ的电压驱动下均可获得１μｍ～２μｍ的致动位移。对９８５０道／厘米的密度磁盘，该位移能覆盖至少一个磁道宽度，满足磁头定位两级伺服系统对第二级致动器位移的基本要求。     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.     

闭排队网络中性能势与无穷小实现因子之间的关系

In this paper,the concept of the infinitesimal realization factor is extended to the parameter-dependent performance functions in closed queueing networks. Then the concepts of realization matrix (its elements are called realization factors) and performance potential are introduced,and the relations between infinitesimal realization factors and these two quantities are discussed. This provides a united framework for both IPA and non IPA approaches. Finally,another physical meaning of the service rate is given.     

浅谈ispLSI及其应用

本文以ｉｓｐＬＩＳＩ１０００系列为例，对ｉｓｐ技术及ｉｓｐＬＳＩ器件进行了较为详细的介绍，并结合具体设计实例，介绍ｉｓｐＬＳ开发工具的使用。     

Dynamic oxide voltage relaxation spectroscopy

A new method for trap characterization of oxidized silicon is described. The Dynamic Oxide Voltage Relaxation Spectroscopy (DOVRS) is an improved version of the formerly proposed Oxide Voltage Relaxation Spectroscopy (OVRS) technique which applies a periodic long duration constant current for tunneling injection. It has been demonstrated that the new technique can be used not only to separate and identify the oxide trap from interface trap, but also to separate and determine the centroid from the oxide trap density generated in the MOS system by the tunneling current stress. In the pulse constant current mode, the OVRS measurement can be completed instead of using the double current-voltage technique. Thus the new method results in more accurate and quicker measurements of the oxide trap centroid. Analytical expressions for computing the paramaters of the interface and oxide traps are derived. The effect of the channel carrier mobility on the spectroscopy is also considered. Two types of oxide and two types of interface traps were observed at a pulse constant Fowler-Nordheim current stress by the new method of DOVRS     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source