A neural network control system with parallel adaptive enhancementsapplicable to nonlinear servomechanisms

In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Ce偶-偶同位素低激发态性质的IBM2描述

通过考虑同类核子相干对间的四极相互作用，在IBM2中对Ce偶－偶同位素^128Ce-^138Ce的低激发态能谱和E2跃迁几率及分支比进行了理论分析，计算结果有效地改善了IBM中这些核的γ带能谱的Staggering现象描述，与实验观察到的低激发态结果基本一致。     

高职高专电工学课程教学改革

针对高职高专培养应用型人才的要求，分析了目前电工学课程教学的现状，提出了电工学课程改革方案。     

Development of Bi(Pb)-2223/Ag pancake-shaped and solenoidal coils

High temperature superconducting (HTSC) multifilamentary (MT) Bi(Pb)-2223/Ag tapes with reproducible critical current density of between 15000 and 20000 A/cm² at 77 K in self field have been achieved using the standard flat-rolling method as the intermediate deformation between sintering periods. Long lengths of Bi(Pb)-2223/Ag MT tapes up to 43 m prepared by the conventional method of powder-in-tube (PIT) have been successfully produced on a laboratory scale. Several coils have been fabricated from sections of the long length tape, using the co-wound wind-and-react (W&R) procedure for the pancake-shaped and the singly-wound W&R as well as R&W procedure for the solenoidal coils. A novel W&R solenoidal coil (reaching ~973 ampere-turns) wound on an alumina ceramic tube generates a DC field of ~19 mT at 77 K and has been fabricated together with five pancake-shaped coils, each generating an average of ~5 mT at 77 K. These are destined for magnet construction with a possible combined calculated field of ~0.04 T at 77 K (with liquid nitrogen as a coolant)     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.     

Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As

Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes.     

浅谈移动通信基站天线系统设计

对基站天线的基本原理、天线选型、天线参数设置、天线安装等方面进行了描述，对天线下倾角、分集距离等进行了重点讨论。     

基于片上DC-DC的CMOS光接收机前置放大器

利用CSMC 0.6μm CMOS工艺,设计了基于片上DC-DC转换器的光接收机前置放大器。电路采用可调跨阻放大器与片上DC-DC结构,有效地克服了单端跨阻放大器易受电源波动的干扰,并解决了高灵敏度与低失真相互矛盾的问题。模拟结果表明,输入动态范围为83 dB(峰-峰值=0.2μA~3 mA),等效输入电流噪声为1.2 pA/Hz(155 MHz),可稳定工作在155 Mb/s速率上;在5 V电源电压下,功耗为95 mW。