Viscometric properties of dilute polystyrene/dioctyl phthalate solutions

We report viscometric data collected in a Couette rheometry on dilute, single‐solvent polystyrene (PS)/dioctyl phthalate (DOP) solutions over a variety of polymer molecular weights (5.5 × 10⁵ ≤ M_w ≤ 3.0 × 10⁶ Da) and system temperatures (288 K ≤ T ≤ 318 K). In view of the essential viscometric features, the current data may be classified into three categories: The first concerns all the investigated solutions at low shear rates, where the solution properties are found to agree excellently with the Zimm model predictions. The second includes all sample solutions, except for high‐molecular‐weight PS samples (M_w ≥ 2.0 × 10⁶ Da), where excellent time–temperature superposition is observed for the steady‐state polymer viscosity at constant polymer molecular weights. No similar superposition applies at a constant temperature but varied polymer molecular weights, however. The third appears to be characteristic of dilute high‐molecular‐weight polymer solutions, for which the effects of temperature on the viscosity curve are further complicated at high shear rates. The implications concerning the relative importance of hydrodynamic interactions, segmental interactions, and chain extensibility with increasing polymer molecular weight, system temperature, and shear rate are discussed. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 787–794, 2006     

Simulation of island aggregation influenced by substrate temperature, incidence kinetic energy and intensity in pulsed laser deposition

Using kinetic Monte Carlo method, we have simulated a pulsed energetic growth process in pulsed laser deposition. During the growth of film, substrate temperature mainly influences upon film morphology by directly enhancing the adatom mobility through the temperature-dependent thermal vibration. By contrast, the effect of incidence kinetic energy on film growth is complex resulting from the collisions between the incident particles and the adatoms. The results show that improving incident kinetic energy cannot significantly accelerate the migration rate of adatom but change surface microstructure and promote single adatom formation resulting in more island aggregation density. Moreover, since pulse-influx characterizes pulsed laser deposition, the intensity per pulse contributes to the evolvement of nucleation density and the results illustrate that a general scaling law different from ordinary power law still exists in energetic growth of pulsed laser deposition.     

一类非线性方程存在多个极限环的一个充分条件

关于方程(1)的极限环唯多性问题,不少人作了研究,[1]引进“n重互相包含”曲线类,,经[2]的改进获得较好的结果,但这类曲线要求的条件较多。本文不从[1]的观点出发,不包含[1]的全部条件,独立地用①11。’,LtnnoB变换折叠相平面,据轨线与折叠线交点的位置,对(1)的等价方程按线性方程积分,将积分的正负项作成比值进行比较,得出一组充分条件。     

IP over Optical网络联合流量工程研究

对IPoverOptical网络的流量工程进行了深入的研究。问题,给出了两种流量工程体系结构,重叠流量工程和联合流量工程,然后对这两种流量工程体系进行了比较,并给出了联合流量工程的实现框图以及需要解决的关键问题。     

A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

基于DSP的图像灰度校正

本文介绍了一个在用户视频环境下，采用典型非线性因子2.2进行非线性校正的公式；进而给出采用TMS320C2000进行图像灰度校正的软件设计方法。     

考虑材料熔化潜热的高温高压本构

本文在修正的SCG模型基础上，提出了一种考虑了熔化潜热的高温高压本构.该本构所给出的铝的剪切模量的变化分为三个阶段：加工硬化，温度软化和熔化，并在完全熔化点处变为零.并且在前两个阶段，计算的结果与修正的SCG模型所给出的剪切模量的差别不超过4%，这一差别是在动高压实验误差范围之内的，在熔化区所给出的剪切模量与现有的实验数据相符合. 关键词： 剪切模量 熔化潜热 修正的SCG模型 动高压实验     

Absorption Complex between Porphyrin and Phenothiazine in Reverse Micelles

Porphyrin derivatives attract much more interest in photodynamic therapy (PDT). Their importance as therapeutic drugs and targeting agents has been widely recognized1, and many of the efforts have been put towards crafting new porphyrin-based molecular entities to achieve enhanced tumor localization, better tissue penetration and increased singlet oxygen quantum yield2. The states of porphyrins in tissue models such as micelles, lipid bilayers are extensively investigated focusing more or l…     

接枝羧基的有限长碳纳米管电子结构的第一性原理研究

基于局域密度泛函理论，采用第一性原理方法，建立了对(5,5)型和(9,0)型有限长碳纳米管接枝羧基官能团的原子模型，通过计算其电子分布和态密度的变化，讨论羧基官能团对碳纳米管电子结构和电子输运特性的影响. 计算表明，接枝羧基的碳纳米管,其电子结构明显改变，其费米能级上的电子态密度下降；最高占据轨道上的非定域程度减弱,致使电子输运性能呈下降趋势. 关键词： 碳纳米管 密度泛函理论 电子结构     

对称正交反对称矩阵反问题解存在的条件

矩阵反问题和矩阵特征值反问题在科学和工程技术中具有广泛的应用,有关它们的研究已取得了许多进展[1,2].[3]和[4]分别研究了反对称矩阵反问题和双反对称矩阵特征值反问题等.本文研究一类更广泛的对称正交反对称矩阵反问题.用Rn×m（Cn×m）表示n×m实（复）矩阵的全体,ASRn×n表示n阶反对称矩阵的全体,ABSRn×n表示n阶双反对称矩阵的全体,ORn×n表示n阶正交矩阵的全体.A+表示矩阵A的Moore-Penrose广义逆.In表示n阶单位矩阵.ei表示n阶单位矩阵的第i列,Sn=[en,en-1,