考虑材料熔化潜热的高温高压本构

本文在修正的SCG模型基础上，提出了一种考虑了熔化潜热的高温高压本构.该本构所给出的铝的剪切模量的变化分为三个阶段：加工硬化，温度软化和熔化，并在完全熔化点处变为零.并且在前两个阶段，计算的结果与修正的SCG模型所给出的剪切模量的差别不超过4%，这一差别是在动高压实验误差范围之内的，在熔化区所给出的剪切模量与现有的实验数据相符合. 关键词： 剪切模量 熔化潜热 修正的SCG模型 动高压实验     

Two-axis-scanning laser Doppler vibrometer for precision engineering

Laser Doppler vibrometer (LVD) has been the most favorite instrument for precision dynamics measurement due to its non-contact, high accuracy and high resolution. However, LDV can only give the dynamic data of a particular location on the entire feature. In order to get the whole field data, a laser beam-scanning mechanism has to be implemented. Currently, motor-driven scanning mirror is used to move the measurement probe from one point to another. The mechanical vibrations of the scanning mirror will reduce the measurement accuracy. This paper introduces a novel scanning LDV optical system embodied in an acousto-optic deflector scanning mechanism. It can improve the measurement accuracy since there is no mechanical motion involved. One main advantage of this system is that it generates a laser scanning beam in parallel that is different from the beam scanning in the conventional scanning laser Doppler vibrometer (SLDV). The new system has a board scanning range. The measurement target size ranges from few tens of millimeters down to 10 μm. We have demonstrated the capability of the novel system on scanning measurements of features as big as ultra-precision cutting tool to features as tiny as AFM cantilever. We believe that the novel SLDV will find profound potential applications in the precision engineering field.     

利用莫尔条纹的准正弦特性的三维轮廓术

分析了两个矩形光栅迭合产生的莫尔条纹的光强分布特性，通过选择适当的光栅参数，可得到一个近似的正弦分划板，并把它用于三维面形测量中，实验结果表明，这种方法简单，易于自动处理，有广泛的实用价值。     

基于移动Agent技术的QoS保障机制

介绍了移动Agent的基本特性。移动Agent可在异构的网络各个节点间自由地移动,它能感知网络的状态,监控系统并与其他Agent进行交互。IETF的IS模型采用了RSVP(ResourcereSerVationProtocol)协议对系统资源进行预留,从而达到一定程度上保障所需QoS的目的。QoS保障机制将移动agent技术与RSVP协议结合起来,通过资源预留和agent动态移动的实现可以达到更好地改善QoS的目的。     

The ordinary quiver of a weight three block of the symmetric group is bipartite

Suppose F is a field of characteristic p?5, and that B is a p-block of the symmetric group Sn of defect 3. We prove that the Ext¹-quiver of B is bipartite, with the bipartition being described in a simple way using the leg-lengths of p-hooks of partitions.     

A neural network control system with parallel adaptive enhancementsapplicable to nonlinear servomechanisms

In this paper, we present a technique for using an additional parallel neural network to provide adaptive enhancements to a basic fixed neural network-based nonlinear control system. This proposed parallel adaptive neural network control system is applicable to nonlinear dynamical systems of the type commonly encountered in many practical position control servomechanisms. Properties of the controller are discussed, and it is shown that if Gaussian radial basis function networks are used for the additional parallel neural network, uniformly stable adaptation is assured and the approximation error converges to zero asymptotically. In the paper, the effectiveness of the proposed parallel adaptive neural network control system is demonstrated in real-time implementation experiments for position control in a servomechanism with asymmetrical loading and changes in the load     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

高职高专电工学课程教学改革

针对高职高专培养应用型人才的要求，分析了目前电工学课程教学的现状，提出了电工学课程改革方案。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².