In search of "Forever," continued transistor scaling one new material at a time

This work looks at past, present, and future material changes for the metal-oxide-semiconductor field-effect transistor (MOSFET). It is shown that conventional planar bulk MOSFET channel length scaling, which has driven the industry for the last 40 years, is slowing. To continue Moore's law, new materials and structures are required. The first major material change to extend Moore's law is the use of SiGe at the 90-nm technology generation to incorporate significant levels of strain into the Si channel for 20%-50% mobility enhancement. For the next several logic technologies, MOSFETs will improve though higher levels of uniaxial process stress. After that, new materials that address MOSFET poly-Si gate depletion, gate thickness scaling, and alternate device structures (FinFET, tri-gate, or carbon nanotube) are possible technology directions. Which of these options are implemented depends on the magnitude of the performance benefit versus manufacturing complexity and cost. Finally, for future material changes targeted toward enhanced transistor performance, there are three key points: 1) performance enhancement options need to be scalable to future technology nodes; 2) new transistor features or structures that are not additive with current enhancement concepts may not be viable; and 3) improving external resistance appears more important than new channel materials (like carbon nanotubes) since the ratio of external to channel resistance is approaching /spl sim/1 in nanoscale planar MOSFETs.     

The full services access networks initiative

An international collaboration aimed at kick-starting investment in broadband access networks is discussed. This activity has focused on producing requirements and design solutions for a low-cost full services access network which is suitable for both home and business service delivery, starting from the telco position where enormous investment has already been made in copper pair technology. This article reports on the drivers, key issues, and top-level view of key requirements as agreed on by the seven major telcos and ten leading suppliers involved until June 1996     

Characterization of oxide trap and interface trap creation duringhot-carrier stressing of n-MOS transistors using the floating-gatetechnique

A technique has been developed to differentiate between interface states and oxide trapped charges in conventional n-channel MOS transistors. The gate current is measured before and after stress damage using the floating-gate technique. It is shown that the change in the I_g-V_g characteristics following the creation and filling of oxide traps by low gate voltage stress shows distinct differences when compared to that which occurs for interface trap creation at mid gate voltage stress conditions, permitting the identification of hot-carrier damage through the I_g- V_g characteristics. The difference is explained in terms of the changes in occupancy of the created interface traps as a function of gate voltage during the I_g-V _g measurements     

A model for AC hot-carrier degradation in n-channel MOSFETs

A recently developed model for AC hot-carrier lifetimes is shown to be valid for typical and worst-case stress waveforms found in CMOS circuits. Three hot-carrier damage mechanisms are incorporated into the model: interface states created at low and medium gate voltages, oxide electron traps created at low gate voltages, and oxide electron traps created at high gate voltages. It is shown that the quasi-static contributions of these three mechanisms fully account for hot-carrier degradation under inverterlike AC stress. No transient effects are required to explain AC stress results, at least for frequencies up to 1 MKz     

Plasma-based X-ray laser at 21 nm for multidisciplinary applications

An overview of recent advances in applications of currently the most energetic X-ray laser at 21 nm is given. The unique parameters of this half-cavity based X-ray laser such as record output energy of 10 mJ, highly symmetric beam, robustness and reproducibility, have made it possible to carry out a number of multidisciplinary scientific projects featuring novel applications of intense coherent X-ray radiation. Selected results obtained in these experiments are reviewed, including X-ray laser probing of dense plasmas, measurements of transmission of focused soft X-ray radiation at intensities of up to 10¹² W cm^-2, measurements of infrared laser ablation rates of thin foils, and ablative microstructuring of solids.     

Evidence of New States Decaying into Xi(*)(c)pi

Using 13.7 fb(-1) of data recorded by the CLEO detector at Cornell Electron Storage Ring, we report evidence of two new charmed baryons: one decaying into Xi(0')(c)pi(+) with the subsequent decay Xi(0')(c)-->Xi(0)(c)gamma, and its isospin partner decaying into Xi(+')(c)pi(-) followed by Xi(+')(c)-->Xi(+)(c)gamma. We measure the following mass differences for the two states: M(Xi(0)(c)gammapi(+))-M(Xi(0)(c)) = 318.2+/-1.3+/-2.9 MeV and M(Xi(+)(c)gammapi(-))-M(Xi(+)(c)) = 324.0+/-1.3+/-3.0 MeV. We interpret these new states as the J(P) = 1 / 2(-) Xi(c1) particles, the charmed-strange analogs of the Lambda(+)(c1)(2593).     

Search for CP violation in tau--> K(pi)nu(tau) decays

We search and find no evidence for CP violation in tau decays into the K(pi)nu(tau) final state. We provide limits on the imaginary part of the coupling constant Lambda describing a relative contribution of the CP violating processes with respect to the standard model to be -0.172相似文献