Transfer-matrix analysis of the spectral linewidth of a partly gain-coupled MQW DFB laser

The spectral linewidth of a partly gain-coupled MQW DFB laser with a quantum-well grating is analysed using the transfer-matrix method. The effective linewidth enhancement factor and the longitudinal spontaneous emission enhancement factor are calculated by newly derived analytical expressions in terms of the transfer matrix.     

Amplitude modulation of submillimeter wave gyrotron output

Amplitude modulation of gyrotron by a small modulation of the anode voltage is calculated using an energy transfer formula. Experimental measurements using a submillimeter wave gyrotron are in good agreement. One hundred percent modulation of the output at frequencies up to several hundred kilohertz has been achieved with anode modulation levels of only a few percent. Numerical calculations lend further support to the experimental results.     

A high-speed 16-kb GaAs SRAM of less than 5 ns using triple-levelmetal interconnection

The authors have realized 16-kb SRAMs with maximum address access time of less than 5 ns and typical power dissipation of less than 2 W at temperatures ranging from 25°C to 100°C. For the RAMs, they have developed a triple-level Au-based interconnection technology that reduces the wiring length and chip size of the SRAM so as to achieve high speed and high yield. Consequently, the wiring length and chip size are reduced to 69% and 58%, respectively, of those obtained by in previous work. The authors experimentally compared the delay time incurred by double-level interconnection and that by triple-level interconnection. This ratio is found to agree well with the simulated one by a model with distributed RC delay. After successfully suppressing Au hillock generation by lowering the process temperature, yield per wafer of 10% is obtained     

Structural and optical properties of silicon nanoparticles prepared by pulsed laser ablation in hydrogen background gas

We studied the structural and optical properties of silicon (Si) nanoparticles (np-Si) prepared by pulsed laser ablation (PLA) in hydrogen (H₂) background gas. The mean diameter of the np-Si was estimated to be approximately 5 nm. The infrared absorption corresponding to Si-H_n (n=1,2,3) bonds was observed at around 2100 cm^-1, and a Raman scattering peak corresponding to crystalline Si was observed at around 520 cm^-1. These results indicate that nanoparticles are not an alloy of Si and hydrogen but Si nanocrystal covered by hydrogen or hydrogenated silicon. This means that surface passivated Si nanoparticles can be prepared by PLA in H₂ gas. The band-gap energy of np-Si prepared in H₂ gas (1.9 eV) was larger than that of np-Si prepared in He gas (1.6 eV) even though they are almost the same diameter. After decreasing the hydrogen content in np-Si by thermal annealing, the band-gap energy decreased, and reached the same energy level as np-Si prepared in He gas. Thus, the optical properties of np-Si were affected by the hydrogenation of the surface of np-Si. PACS 81.15.Fg; 61.46.+W; 78.67.Bf     

All-optical bistable switching dynamics in 1.55-μm two-segmentstrained multiquantum-well distributed-feedback lasers

All-optical bistable switching dynamics of 1.55-μm two-segment strained multiquantum-well (MQW) distributed-feedback (DFB) lasers were systematically studied both experimentally and theoretically. Some fundamental optical functionalities, including all-optical set-reset (flip-flop) operations, were demonstrated. The switching responses of these bistable lasers were studied, for the first time, with optical injection from a single-mode DFB laser, indicating that the switching dynamics based on gain quenching and absorption saturation are inherently different. A theoretical model including optical injection was developed to study these all-optical bistable switching characteristics in segmented bistable lasers. It was found that the nonuniform distribution of the photon density in the bistable laser cavity induced by optical injection was essential to perform the time-domain switching operations. Simulations showed a good agreement with experimental observations and indicated design improvements. Although the switching responses in the range of tens of picoseconds can be obtained with these bistable lasers, the maximum repetition frequency of the bistable systems would still be limited to the hundreds of megahertz due to the slow carrier recovery time (5 ns) of the lasers     

Proposal of networking by PON technologies for full and ethernet services in FTTx

The construction of optical access networks is one of key issues to provide new broad-band services and emulation of legacy services. Passive optical network (PON) technologies realize sophisticated and economical optical access networks for these purposes. This paper summarizes requirements and technical and marketing trends for optical access networks. It also presents advantages of networking by PON technologies for optical access networks. Moreover, it clarifies issues to install and operate PON base optical access networks and proposes solutions for these issues.     

A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues

We propose a new 2-port SRAM with a single read bit line (SRBL) eight transistors (8 T) memory cell for a 45 nm system-on-a-chip (SoC). Access time tends to be slower as a fabrication is scaled down because of threshold voltage (V_t) random variations. A divided read bit line scheme with shared local amplifier (DBSA) realizes fast access time without increasing area penalty. We also show an additional important issue of a simultaneous read and write (R/W) access at the same row by using DBSA with the SRBL-8T cell. A rise of the storage node causes misreading. A read end detecting replica circuit (RER) and a local read bit line dummy capacitance (LDC) are introduced to solve this issue. A 128 bit lines - 512 word lines 64 kb 2-port SRAM macro using these schemes was fabricated by a 45 nm bulk CMOS low-standby-power (LSTP) CMOS process technology [1]. The memory cell size is 0.597 mum². This 2-port SRAM macro achieves 7 times faster access time without misreading.     

Imaging and quantitative analysis of water evaporation process using spectral-domain optical coherence tomography under illumination with two near-infrared wavelengths

Optical Review - Dynamics of water content in a biological tissue is an important information of a biological activity. However, although the conventional measurement method measures the total...     

Residual Stress Determination Using Hole Drilling and 3D Image Correlation

In recent years, the hole drilling method for determining residual stresses has been implemented with optical methods such as holographic interferometry and ESPI to overcome certain limitations of the strain rosette version of hole drilling. Although offering advantages, the interferometric methods require vibration isolation, a significant drawback to their use outside of the laboratory. In this study, a 3D image correlation approach was used to measure micron-sized surface displacements caused by the localized stress relief associated with hole drilling. Residual stresses were then found from the displacements using non-dimensional relations previously derived by finite element analysis. A major advantage of image correlation is that it does not require interferometric vibration isolation. Experiments were performed to check the ability of this new approach for uniaxial and equi-biaxial states of stress. Stresses determined by the approach were in good agreement with computed values and those determined by hole drilling using holographic interferometry.