Electrochemically driven clathration/declathration of ferrocene and its derivatives by a nanometer-sized coordination cage

The electrochemical, NMR, and crystallographic studies clearly indicate that the clathration and declathration of ferrocene and its derivatives in a self-assmbled Pd(II)-linked nanometer-sized cage can be controlled by the oxidation state of the guest. Namely, the guests are clathrated when they are reduced but declathrated when they are oxidized. The process is rapid on the NMR time scale but slow on the CV time scale.     

Practical carbonyl-ene reactions of alpha-methylstyrenes with paraformaldehyde promoted by a combined system of boron trifluoride and molecular sieves 4A

[reaction: see text] A combined system of boron trifluoride and molecular sieves is an efficient promoter for the carbonyl-ene reaction of alpha-methylsyrenes with paraformaldehyde. The coexistence of BF3 x OEt2 and molecular sieves 4A is essential for obtaining high yields of ene products.     

Synthesis and DNA binding properties of iminodiacetic acid-linked polyamides: characterization of cooperative extended 2:1 side-by-side parallel binding

A series of iminodiacetic acid (IDA)-linked polyamides (DpPyPyPy-IDA-PyPyPyDp) were prepared and constitute polyamides joined head-to-head by a functionalizable five-atom linker. It was found that the IDA linker exerts a unique influence over the DNA binding conformation differing from both the beta-alanine (extended) or gamma-aminobutyric acid (hairpin) linkers, resulting in cooperative parallel side-by-side 2:1 binding in an extended conformation most likely with a staggered versus stacked alignment. A generalized variant of a fluorescent intercalator displacement (FID) assay conducted on a series of hairpin deoxyoligonucleotides containing a systematically varied A/T-rich binding-site size was used to distinguish between the binding modes of the IDA-linked polyamides.     

Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy

Layered materials can be grown on various substrates through van der Waals epitaxy (vdWE) regardless of lattice mismatch. The atomistic study of the film-substrate interface in vdWE is becoming increasingly important due to their expected applications as two-dimensional (2D) materials. In this contribution, we have grown GaSe thin films on Ge(111) substrates by molecular beam epitaxy and studied the GaSe/Ge(111) interface using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Cross-sectional HAADF-STEM observations revealed that the grown layers adopt predominantly the expected wurtzite-like structure and stacking, but layers with zinc-blende-like structure, similar to Ga₂Se₃ but apparently different, and other layer stacking sequences, exist locally near the film-substrate interface. These results demonstrate that even in vdWE, structural changes can occur in the grown layers adjacent to the substrate, highlighting the importance of such interface for synthesizing and applying ultimately thin 2D materials.     

Effect of molecular dynamics and modulated structure on H NMR spectrum studied in [Mg(H2O)6][SiF6]

The spectrum of magnetic resonance is typically affected by a modulated structure in an incommensurate phase, resulting in the broadened spectrum characterized by ‘edge singularities’. We demonstrate that the modulated structure in the crystal where molecular motion exists is responsible for the narrowing of the spectrum in the fast motional region by means of the simulation of ²H NMR spectrum of [Mg(H₂O)₆][SiF₆]. The program developed by combining the theories of phase solitons in the incommensurate phase and motional change of ²H NMR spectrum was used for the simulation. We obtained a good agreement between the theoretical ²H NMR spectrum and experimental one for [Mg(H₂O)₆][SiF₆].     

Structural disorder and diffusional pathway of oxide ions in a doped Pr2NiO4-based mixed conductor

MEM nuclear density analysis from neutron diffraction data measured in situ at 1015.6 degrees C has indicated the two-dimensional network of curved O2-O3-O2 oxide-ion diffusion paths on the (Pr,La)-O layer in a K2NiF4-type structured oxide-ionic and electronic mixed conductor (Pr0.9La0.1)2(Ni0.74Cu0.21Ga0.05)O4+delta.     

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).