Ferromagnetism study of Co<Subscript>0.2</Subscript>Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>0.8−<Emphasis Type="Italic">x</Emphasis></Subscript>O films prepared by the sol–gel method

Co_0.2Mg _x Zn_0.8−x O films prepared with different molar ratio of magnesium acetate to zinc acetate were deposited on substrates by the sol–gel technique. X-ray diffraction, photoluminescence (PL) and ferromagnetism measurements were used to characterize the Co_0.2Mg _x Zn_0.8−x O diluted magnetic semiconductors. The acceptor-like defects were determined in the PL band and the intensity of the acceptor-related PL increased with increasing Mg concentration. Therefore, an increase in the number of the acceptor-like defects (zinc vacancies especially) in the Co_0.2Mg _x Zn_0.8−x O film may lead to the enhancement of the magnetic properties. It is worth noting that changes in Mg concentration and the number of the acceptor-like defects are important issues for producing strong ferromagnetism Co_0.2Mg _x Zn_0.8−x O films prepared by the sol–gel method.     

Semi-fragile spatial watermarking based on local binary pattern operators

Local binary pattern (LBP) operators, which measure the local contrast within a pixel's neighborhood, have been successfully applied to texture analysis, visual inspection, and image retrieval. In the paper, we present a novel semi-fragile spatial watermarking method based on LBP operators by using the local pixel contrast for the embedding and extraction of watermarks. We also propose a general framework for multi-level image watermarking. Experimental results show that the proposed watermarking methods are robust against commonly-used image processing operations, such as additive noise, luminance change, contrast adjustment, color balance, and JPEG compression. At the same time, they achieve good invisibility, fragility, and image tamper detection and localization with less computational cost.     

Interfacial Reactions and Microstructures of Sn-0.7Cu-<Emphasis Type="Italic">x</Emphasis>Zn Solders with Ni-P UBM During Thermal Aging

The effects of the addition of Zn to Sn-0.7Cu solders are investigated. The study is focused on the interfacial reactions, microstructures, and mechanical properties after reaction with Ni-P under bump metallurgies (UBMs). The Zn contents in Sn-0.7Cu-xZn are varied as 0.2, 0.4, and 0.8 (in wt.% unless otherwise specified). In the reaction with Ni-P UBM during thermal aging at 150°C for 1000 h, (Cu,Ni)₆Sn₅ intermetallic compounds (IMCs) are formed at the Sn-0.7Cu/UBM interface, whereas Zn is incorporated into IMCs to form (Cu,Ni,Zn)₆Sn₅ in the Zn-doped solders. As the Zn content increases, the interfacial IMC thickness is reduced. A total reduction of about 40% in IMC thickness was observed for the 0.8% Zn-doped Sn-Cu. The same IMC particles are also observed in the matrix of each solder. In Sn-0.7Cu, (Cu,Ni)₆Sn₅ particles are coarsened during aging, while (Cu,Ni,Zn)₆Sn₅ particles in the Zn-added solders are less coarsened and remain much smaller than (Cu,Ni)₆Sn₅. The growth rate of (Cu,Ni)₆Sn₅ during thermal aging is significantly suppressed by the addition of Zn. Consequently, after reaction with Ni-P UBM, the Zn-doped solders exhibit a thermally stable microstructure as measured by hardness and shear strength.     

The influence of lanthanum doping on the physical and electrical properties of BTV ferroelectric thin films

In this study, the ferroelectricity of as-deposited Bi_3.9La_0.1Ti_2.9V_0.1O₁₂ (BLTV), Bi_3.9Ti_2.9V_0.1O₁₂ (BTV), and Bi₄Ti₃O₁₂ (BIT) thin films was prepared and compared by rf magnetron sputtering technology. For the BLTV, BTV, and BIT thin films deposited on Pt/Ti/SiO₂/Si and SiO₂/Si substrate, the physical and electrical characteristics of lanthanum doped BTV (BLTV) were better than those of BIT and BTV thin films. Regarding the physical properties, the micro-structure of as-deposited BTV and BLTV thin films were obtained and compared by XRD patterns and SEM images. The BLTV and BTV thin films were also exhibited clear the ferroelectricity. The remanent polarization (P _r ) of as-deposited BLTV thin films was 11 μC/cm² as the measured frequency of 100 kHz. It was higher than those of BTV thin films. Finally, the polarization of BLTV thin film capacitor decreased by 9%, while that of the BTV decreased by 15% after the fatigue test with 10⁹ switching cycles.     

Utilization of self-injection Fabry–Perot laser diode for long-reach WDM-PON

In this investigation we propose and demonstrate a wavelength widely tunable laser source employing a self-injected Fabry–Perot laser diode (FP-LD) for long-reach wavelength-division-multiplexed passive optical network (WDM-PON). By using a tunable bandpass filter and an optical circulator inside the gain cavity, a stable and single-longitudinal-mode (SLM) laser output is achieved. Besides, the proposed laser sources are directly modulated at 2.5 Gb/s for both downlink and uplink transmissions of 85 km single mode fiber (SMF) in PON without dispersion compensation.     

Voltage-controlled optical switch in planar nematic liquid crystal film

This study presents an integrated device that consists of a directional coupler and an electro-optic switch. The device is designed to include a nematic liquid crystal cell, comprising a grating-like electrode. Applying the appropriate voltage to the cell yields a periodically distributed refractive index. An incident polarized beam will couple to an adjacent channel if it is parallel to the channel. The coupling efficiency is controlled by applied voltage. An obliquely injected polarized beam will be reflected and refracted in the channel, and propagated along a curved path. The route of the beam can be controlled by applying the voltage. A multiport routing was achieved for voltage modulation. In addition, the distribution of refractive index is also investigated by employing conoscopic technique experimentally and numerically.     

Scheduled WiFi using distributed contention in WLANs: algorithms,experiments, and case-studies

The ubiquitous adoption of WiFi introduces large diversity in types of application requirements and topological characteristics. Consequently, considerable attention is being devoted to making WiFi networks controllable without compromising their scalability. However, the main MAC protocol of WiFi, distributed coordination function (DCF), is a contention-based protocol using random backoff. Thus, operating under DCF, the access of channel is hard to control and nonpredictable. In order to provide controllability of channel access in WiFi, we propose Rhythm, a MAC protocol that achieves scheduled WiFi efficiently using distributed contention. By achieving scheduled WiFi, channel access can be controlled by manipulating the schedule decision. We evaluate the performance of Rhythm through analysis, experiments, and case-studies.     

Interfacial reactions of Sn-Ag-Cu solders modified by minor Zn alloying addition

The near-ternary eutectic Sn-Ag-Cu alloys have been identified as leading Pb-free solder candidates to replace Pb-bearing solders in microelectronic applications. However, recent investigations on the processing behavior and solder joints reliability assessment have revealed several potential reliability risk factors associated with the alloy system. The formation of large Ag₃Sn plates in Sn-Ag-Cu joints, especially when solidified in a relatively slow cooling rate, is one issue of concern. The implications of large Ag₃Sn plates on solder joint performance and several methods to control them have been discussed in previous studies. The minor Zn addition was found to be effective in reducing the amount of undercooling required for tin solidification and thereby to suppress the formation of large Ag₃Sn plates. The Zn addition also caused the changes in the bulk microstructure as well as the interfacial reaction. In this paper, an in-depth characterization of the interfacial reaction of Zn-added Sn-Ag-Cu solders on Cu and Au/Ni(P) surface finishes is reported. The effects of a Zn addition on modification of the interfacial IMCs and their growth kinetics are also discussed.     

An analytic and accurate model for the threshold voltage of short channel MOSFETs in VLSI

Based on the two-dimensional Poisson equation, the surface potential distribution along the surface channel of a MOSFET has been analytically derived by assuming negligible source and drain junction depths and its minimum potential is then used to determine the threshold voltage. The existence of a minimum surface potential point along the channel of a MOSFET under an applied drain bias is consistent with the numerical results of the two-dimensional analysis. The effects of finite source and drain junction depths have been elegantly included by modifying the depletion capacitance under the gate and the resulted threshold voltage model has been compared to the results of the two-dimensional numerical analysis. It has been shown that excellent agreement between these results has been obtained for wide ranges of substrate doping, gate oxide thickness, channel length (< 1 μm), substrate bias, and drain voltage. Moreover, comparisons between the developed model and the existing experimental data have been made and good agreement has been obtained. The major advantages of the developed model are that no iterations and no adjustable fitting parameters are required. Therefore, this simple and accurate threshold voltage model will become a useful design tool for ultra short channel MOSFETs in future VLSI implementation.     

Energy of grain boundaries between cusp misorientations

The disclination model of high angle grain boundaries proposed before is used to understand the energy-angle relations between cusp misorientations. It is found that the model predicts the correct relationship within experimental error with only one adjustable parameter which resembles the Burgers vector of dislocations at low angles. Experimental data for [100] symmetric tilt boundaries in Cu and Al and for [110] symmetric tilt boundaries in Al are used for illustration.