Fabrication of Schottky barrier MOSFETs using self-assembly CoSi2 nanopatterning and spacer gate technologies

A self-assembly patterning method for generation of epitaxial CoSi₂ nanostructures was used to fabricate 50 nm channel-length MOSFETs. The transistors have either a symmetric structure with Schottky source and drain or an asymmetric structure with n⁺-source and Schottky drain. The patterning technique is based on anisotropic diffusion of Co/Si atoms in a strain field during rapid thermal oxidation. The strain field is generated along the edges of a mask consisting of 20 nm SiO₂ and 300 nm Si₃N₄. During rapid thermal oxinitridation (RTON) of the masked silicide structure, a well-defined separation of the silicide layer forms along the edge of the mask. These highly uniform gaps define the channel region of the fabricated device. The separated silicide layers act as metal source and drain. A poly-Si spacer was used as the gate contact. The asymmetric transistor was fabricated by ion implantation into the unprotected CoSi₂ layer and a subsequent out-diffusion process to form the n⁺-source. I–V characteristics of both the symmetric and asymmetric transistor structures have been investigated.     

VLF相位周期滑移现象的观测与分析

分析了新乡观测到的VLF相位周期滑移现象,研究了产生相位周期滑移的原因,揭示了相位周期滑移的实质:VLF传播相位周期滑移是发生在日出或日落过渡期间一种特殊的多模干涉现象,它是由传播路径昼夜分界处的低电离层不连续性所引起的模转换干涉所造成的.     

Packet Design and Signal Processing for OFDM-Based Mobile Broadband Wireless Communication Systems

We consider improving the performance of orthogonal frequency-division multiplexing (OFDM)-based mobile broadband wireless communication (MBWC) systems. We show that a recently approved packet-based MBWC standard can cause the resulting systems to suffer from severe performance degradations for time-varying channels due to the lack of a mechanism for tracking the time-varying channels needed for coherent detection. We consider both packet design and signal processing to deal with time-varying channels. For the packet design, we segment an entire packet into multiple subpackets—with each subpacket having zero tail bits to reset the convolutional channel encoder—so that the detection/decoding result of each subpacket can be used to update the channel response for this subpacket. For signal processing, we use weighted polynomial fitting and prediction at the receiver to improve the channel tracking accuracy. Simulation results show that the coherent detection based on our new scheme can significantly outperform the commonly suggested differential modulation/detection methods.     

基于粗糙集信息观的决策表属性约简方法

粗糙集理论是近年来发展起来的一种有效的处理不精确、不确定、含糊信息的数学理论方法，它被广泛应用于相容和不相容决策表的属性约简和核属性计算。利用反例指出目前基于粗糙集信息观[2、6]的决策表属性约简和核属性计算方法的局限性。对决策表的性质作了深入的研究，研究发现文献[2、6]方法的不足原因是：它们没有考虑U／ind（C）中等价类的相客性。给出了基于U／ind（C）中等价类相客性的属性约简定义和核属性定义，并给出了一种新的基于粗糙集信息观的决策表属性约简和核属性计算方法。讨论了该方法同文献[2、6]方法的区别。最后用相同实例验证了该方法的有效性。     

农村通信如何"突围"

农村通信作为农村地区信息化的基础，对于全面建设小康具有特殊的重要地位。介绍了我国农村通信的发展现状，分析了农村通信发展的困难压其原因，最后对农村压边远、欠发达地区通信的均衡震展提出了一些建议。     

Flash器件中氧化硅/氮化硅/氧化硅的特性

对普遍采用的氧化硅/氮化硅/氧化硅( ONO)三层复合结构介质层的制备工艺及特性进行了研究分析,研究了ONO的漏电特性以及顶氧( top oxide)和底氧( bottom oxide)的厚度对ONO层漏电的影响.结果表明,采用较薄的底氧和较厚的顶氧,既能保证较高的临界电场强度,又能获得较薄的等效氧化层厚度,提高耦合率,降低编程电压.     

GaN-MOCVD设备反应室流场的CFD数值仿真

采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议.     

计费帐务系统发展趋势分析

计费帐务系统作为业务运营支撑系统的重要组成部分。其发展方向日益受到运营商的关注。通过对计量帐务系统的研究，首先介绍了传统计费模式的现状以及存在的问题，然后结合各大公司产品对计责帐务系统的关键技术进行了分析，最后提出未来计费帐务系统的特征及对其发展趋势的展望。     

Temperature effects on surface activity and application in oxidation of toluene derivatives of CTAB-SDS with KMnO4

The γ_cmc values of CTAB-SDS decrease from 63.67 mN/m at 10‡C to 36.38 mN/m at 90‡C, slightly lower than those of either CTAB or SDS. Correspondingly, the CMC of CTAB-SDS decreases almost by half. The increase of surface activity of CTAB-SDS can be attributed to the relatively weak electrostatic interaction at high temperature, which is supported by the increase of solubility of CTAB-SDS with rise in temperature. Catalytic effect on oxidation of toluene derivatives with potassium permanganate follows the order CTAB-SDS > SDS > CTAB. This is not caused by the dissociative effect of CTAB-SDS with low surface activity at low temperature, as seen from the fact that almost all oxidative products can be retrieved for different toluene derivatives and surfactants by mimicking the conditions of reaction. In the emulsifications of toluene derivatives at 90‡C, the time that turbid water layers of surfactant solutions take to become clear is the same as that of the catalytic effect on oxidation of toluene derivatives. Thus, it can be inferred that surfactants can improve the oxidation yields of toluene derivatives by increasing the contact between two reacting phases.     

An Efficient Selective Oxidation of Alcohols with Potassium Permanganate Adsorbed on Aluminum Silicate under Solvent-free Conditions and Shaking

A new procedure for the selective oxidation of alcohols to the corresponding aldehydes and ketones with potassium permanganate supported on aluminum silicate at room temperature under solvent-free conditions and shaking is reported.