Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Effect of exponentially graded base doping on the performance ofGaAs/AlGaAs heterojunction bipolar transistors

The authors have fabricated n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with base doping graded exponentially from 5×10¹⁹ cm^-3 at the emitter edge to 5×10¹⁸ cm^-3 at the collector edge. The built-in field due to the exponentially graded doping profile significantly reduces base transit time, despite bandgap narrowing associated with high base doping. Compared to devices with the same base thickness and uniform base doping of 1×10¹⁹ cm^-3 , the cutoff frequency is increased from 22 to 31 GHz and maximum frequency of oscillation is increased from 40 to 58 GHz. Exponentially graded base doping also results ill consistently higher common-emitter current gain than uniform base doping, even though the Gummel number is twice as high and the base resistance is reduced by 40%     

20-relative neighborhood graphs are hamiltonian

For any two points p and q in the Euclidean plane, define LUN_pq = { v | v ∈ R², d_pv < d_pq and d_qv < d_pq}, where d_uv is the Euclidean distance between two points u and v . Given a set of points V in the plane, let LUN_pq(V) = V ∩ LUN_pq. Toussaint defined the relative neighborhood graph of V, denoted by RNG(V) or simply RNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of RNG(V) if and only if LUN_pq (V) = ?. The relative neighborhood graph has several applications in pattern recognition that have been studied by Toussaint. We shall generalize the idea of RNG to define the k-relative neighborhood graph of V, denoted by kRNG(V) or simply kRNG, to be the undirected graph with vertices V such that for each pair p,q ∈ V, (p,q) is an edge of kRNG(V) if and only if | LUN_pq(V) | < k, for some fixed positive number k. It can be shown that the number of edges of a kRNG is less than O(kn). Also, a kRNG can be constructed in O(kn₂) time. Let E_c = {e_pq| p ∈ V and q ∈ V}. Then G_c = (V,E_c) is a complete graph. For any subset F of E_c, define the maximum distance of F as max_epq∈Fd_pq. A Euclidean bottleneck Hamiltonian cycle is a Hamiltonian cycle in graph G_c whose maximum distance is the minimum among all Hamiltonian cycles in graph G_c. We shall prove that there exists a Euclidean bottleneck Hamiltonian cycle which is a subgraph of 20RNG(V). Hence, 20RNGs are Hamiltonian.     

Modeling hyperelastic behavior of rubber: A novel invariant‐based and a review of constitutive models

A constitutive phenomenological model completing the Gent‐Thomas concept is carried out to formulate laws governing the hyperelastic behavior of incompressible rubber materials. It is shown that the phenomenological Gent‐Thomas model (1958) and the constrained chain model (1992) give similar precise results at small to moderate deformation. On the other hand, comparisons of the outcome of the proposed model with that of the molecular model from the combined concepts of Flory‐Erman and Boyce‐Arruda (2000), and with those of the phenomenological models of Ogden (1982), Yeoh‐Fleming (1997), Pucci‐Saccomandi (2002) and Beda (2005) are made. Residual inconveniences raised by attractive continuum models in rubber elasticity literature have been successfully overcome. Results from both the statistical and phenomenological mechanics concepts are compared with the data of some useful classical materials (rubbers of Treloar, Rivlin‐Saunders, Pak‐Flory and Yeoh‐Fleming). The results permit one to see salient equivalence of the two theories for a more reliable prediction of stress‐stretch response for all states of any mode of deformation. A complete and exhaustive analysis of the Mooney plot that combines small and very large extension‐compression has been quite essential in assessing the validity of models. A method of identification of material parameters is presented and data of the simple tension suffice for the determination of the parameter values. It is shown that the ordinary identification procedures, such as the usual least squares, a very much used numerical method in materials investigation, can be unsuitable in some cases of hyperelastic modeling. © 2007 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 1713–1732, 2007     

Characterization of charge trapping in submicrometer NMOSFET's bygate capacitance measurements

Trapping of net positive charge at low gate stress voltage, and of net negative charge at high gate stress voltage, is observed through changes in the gate-to-drain capacitance of the stressed junction. These observations can be explained in terms of electron trapping, hole trapping, and generation of acceptor-like interface states located in the upper half of the bandgap. Channel shortening is also observed and found to exhibit a logarithmic time dependence     

A neural network compensator for uncertainties of roboticsmanipulators

A neural network controller for trajectory control of robotic manipulators that is used not to internalize the inverse dynamic model of the controlled object but to compensate only the uncertainties of the robotic manipulator is presented. Its performance is compared with that of the conventional adaptive scheme. The results show the ability of the neural network controller to adapt to unstructured effects. A learning method for the neural network compensator with true teaching signals is shown. The tracking error of the robotic manipulator was greatly reduced when this controller was used     

Supporting real-time and multimedia applications on the Mercuritestbed

This paper describes the distributed system, network and software architecture, the application development environment, the performance, and the early lessons learned on the ATM LAN testbed Mercuri established at the Honeywell Technology Center, to develop distributed multimedia technologies for real-time control applications. We have developed a client-server-based software architecture on Sun Sparcstation-2s connected by a Fore Systems' ASX-100 ATM switch, with video processing handled by Parallax's X Video cards. The architecture enables network-transparent applications and provides simple primitives for multimedia capture, display, transmission, storage, and retrieval. A real-time multimedia-in-the-loop control application was developed as the vehicle for testing the capabilities and performance of the network. Our test measurements focus on the end-user-level performance metrics such as message throughput and round-trip delay as well as video-frame jitter under no-load and load conditions. Our results show that the maximum burst throughput that can be supported at the user level is 48 Mb/s using AAL 5, while round-trip delays for 4-kbyte messages are about 3 ms. Our experience reveals a number of performance bottlenecks and open issues in using commercial ATM switches for practical applications. Our conclusions are outlined     

A note on dephasing and pair-breaking

It is shown that the dephasing which suppresses the weak localization correction to the conductivity has the same physical origin than pair-breaking in superconductors and thus-following de Gennes-may be expressed in terms of the correlation function of the operator for time reversal.     

Unoccupied electronic states of epitaxial iron layers on Cu(100)

Inverse photoemission spectra were taken for thin epitaxial iron films on Cu(100). For a film thickness of eight monolayers the observed electronic states are characteristic for a fcc(100) surface. Thed-bands of iron show a ferromagnetic exchange splitting of 1.1 eV, considerably smaller than the bulk value of 1.8 eV, which we observe for film thicknesses above 18 monolayers.