Perfect Blind-Channel Shortening for Multicarrier Systems

In multicarrier systems, when the order of a channel impulse response is larger than the length of the cyclic prefix (CP), there is a significant performance degradation due to interblock interference (IBI). This paper proposes a blind-channel shortening method in which the equalizer parameter vector is formed by the noise subspace of the received signal correlation matrix so that the output power is maximized. The proposed method can not only shorten the effective channel impulse response to within the CP length but also maximize the output signal-to-interference-and-noise ratio while eliminating the IBI. We point out that the performance depends on the choice of a decision delay and propose a simple method for determining the appropriate delay. We propose both a batch algorithm and an adaptive algorithm and show by simulation that they are superior to the conventional algorithms.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

A Low-Supply-Voltage CMOS Sub-Bandgap Reference

A low-power (21 $muhbox{W}$ ) bandgap reference source that is operable from a nominal supply voltage of 1.4 V is described. The circuit provides an output voltage equal to the bandgap voltage having a low output resistance and allows resistive loading. It does not use resistors or operational amplifiers. Thus, the design is suitable for fabrication in any digital CMOS technology. The circuit uses a current conveyor and current mirrors to convert the proportional to absolute temperature voltage into a current using a MOSFET. The current is converted back to a voltage by using the functional inverse of the FET $v-i$ characteristics. This makes the voltage gain linear and temperature independent. The absence of back-gate bias is the reason for achieving the low supply voltage of operation. Simulation results using the transistor models for the 0.18-$mu$m TSMC process show that the voltage-variation over the temperature range 0 to 100 $^{circ} {hbox {C}}$ is $≪$1 mV.      

AlGaN-based quantum-well heterostructures for deep ultraviolet light-emitting diodes grown by submonolayer discrete plasma-assisted molecular-beam epitaxy

Features of plasma-assisted molecular-beam epitaxy of AlGaN compounds at relatively low temperatures of the substrate (no higher than 740°C) and various stoichiometric conditions for growth of the nitrogen- and metal-enriched layers are studied. Discrete submonolayer epitaxy for formation of quantum wells and n-type blocking layers without varying the fluxes of components was used for the first time in the case of molecular- beam epitaxy with plasma activation of nitrogen for the nanostructures with the Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells. Structural and optical properties of the Al _x Ga_{1 ? x} N layers in the entire range of compositions (x = 0–1) and nanostructures based on these layers are studied; these studies indicate that there is photoluminescence at room temperature with minimum wavelength of 230 nm. Based on the analysis of the photoluminescence spectra for bulk layers and nanoheterostructures and their temperature dependences, it is concluded that there are localized states in quantum wells. Using the metal-enriched layers grown on the c-Al₂O₃ substrates, heterostructures for light-emitting diodes with Al _x Ga_{1 ? x} N/Al _y Ga_{1 ? y} N quantum wells (x = 0.4–0.5, y = x + 0.15) were obtained and demonstrated electroluminescence in the ultraviolet region of the spectrum at the wavelength of 320 nm.     

Distributed Transmit Antenna Selection (DTAS) Under Performance or Energy Consumption Constraints

Motivated by the transmit antenna selection (TAS) concept, used in Multiple-Input-Multiple-Output systems, we argue for distributed transmit antenna selection (DTAS), which corresponds to a method of selecting a subset of available relays in cooperative diversity systems. Assuming amplify and forward relays, the proposed selection method represents a low-complexity tool for determining the optimum relaying set. Two optimization problems are studied: the error probability minimization subject to total energy consumption constraints, and the dual one, the total energy consumption minimization under error performance constraints. Numerical examples verify the advantage of the proposed method in adapting the number of relaying terminals to the desired performance-consumption tradeoff.     

Optical properties of doped bismuth telluride crystals in the region of plasma effects

The optical properties of bismuth telluride crystals doped with donor-and acceptor-type impurities are studied. The fact that energy corresponding to the resonance frequency of plasma oscillations of free charge carriers (plasmons) approaches the band-gap energy is detected in the infrared spectral region, where the main elementary excitations in the electronic system of these materials are observed. The mentioned approach of energies varies the intensity of electron-plasmon interaction, which affects the recombination processes in the materials widely used for the fabrication of thermoelectric energy converters.     

Förster energy transfer from poly(arylene–ethynylene)s to an erbium–porphyrin complex

We study the infrared emission at 1.54 μm of an organolanthanide complex, Er(III)-tetraphenylporphyrin [Er(TPP)acac], both as a result of direct optical excitation and via energy transfer from host π-conjugate polymers of type poly(arylene–ethynylene) [PAE]. In the first case, the emission of the neat complex is characterized in inert transparent materials and a value of the quantum yield at 1.54 μm φ_IR=4×10⁻⁴ is measured. Then, fluorescence resonance transfer is investigated in blends of Er(TPP)acac with PAEs by monitoring the quenching of the polymer fluorescence along with the enhancement of both the visible emission of the ligand and the near-infrared band of Er³⁺. These different procedures allow a detailed analysis of the transfer efficiency within a specific implementation of the Förster model for polymeric donors. The experimental values of the critical radius R₀, ranging from 1.3 to 2.5 nm for the different blends, are in good agreement with theory for a wide interval of the physical and spectroscopic parameters. This suggests that other mechanisms for excitation transfer do not play a significant role in these materials.     

Experimental characterization of hexatic smectic phases through electro-optic studies and dielectric relaxation spectroscopy

The electro-optic and complex dielectric behaviour of an antiferroelectric liquid crystal 4-(1-methylheptyloxycarbonyl)phenyl 4'-(n-butanoyloxyprop-1-oxy)biphenyl-4-carboxylate, having chiral SmC_A* and hexatic smectic phases, have been investigated. Complex dielectric permittivities were measured as a function of frequency, d.c. bias field and temperature. Spontaneous polarization was measured by the current reversal technique; tilt angle was measured under a polarizing microscope using a low frequency electric field. The electro-optic properties and dielectric behaviour of the material are compared with results obtained by DSC and polarizing optical microscopy. Dielectric relaxation processes in SmC_A* and hexatic smectic phases were determined. The dielectric strength at the SmC_A* to hexatic smectic phase transition is discussed in terms of coupling between the long range bond orientational order and smectic C director. It seems from the results of spontaneous polarization and dielectric relaxation spectroscopy that the material might possess an additional phase between the SmC_A* and hexatic smectic I* phases.     

Some Thoughts on the Evolution of Work Teams in Organizations

In this time of flat, team-based and technology-enabled organizations the effectiveness of communication and team leadership practices will be more important than ever before. Therefore, we believe that some of the earlier, time-tested classic works on group dynamics and leadership are worthy of re-reading. We are particularly impressed by how relevant one of the oldest classics, Benne and Sheats' (1948) article on functional roles of group members, remains to this day.     

Estimate for the Best Approximation of Summable Functions of Several Variables with a Certain Symmetry of Fourier Coefficients

An upper bound for the best approximation of summable functions of several variables by trigonometric polynomials in the metric of L is determined in terms of Fourier coefficients. We consider functions representable by trigonometric series with certain symmetry of coefficients satisfying a multiple analog of the Sidon–Telyakovskii conditions.