Equivalent electrical network of the DNA molecule

The variation of current density with bias or temperature is examined for DNA molecules of different configuration. To this end, the DNA molecule is represented as an equivalent electrical network whose behavior is then simulated with PSPICE. The results are found to be in close agreement with ones obtained within a physical model. It is established that the electrical response of a DNA molecule to an applied electric field depends on the boundary conditions and the potential profile along the molecule. This finding should contribute to the creation of a complete library of DNA-molecule configurations with prescribed electrical properties.     

Self-oscillating dimmable electronic ballast

This paper presents a simple alternative for an electronic ballast operating in self-sustained oscillating mode with dimming capability for fluorescent lamps. A simple modification in one of the gate drivers side circuit allows the lamp to dim without compromising the simplicity, reliability, and low cost which characterize the self-oscillating electronic ballast (SOEB). A qualitative analysis is presented to explain the behavior of the proposed self-oscillating electronic ballast with dimming feature. In addition, the stability and the key equations for the design are derived using the extended Nyquist criterion and describing function method. Experimental results from two 40-W electronic ballasts are presented to demonstrate the performance and to validate the analysis carried out.     

NANODEV: A Nanoelectronic-Device Simulation Software System

The concept and structure of the NANODEV simulation software are described. NANODEV deals with nanoelectronic devices that exploit single-electron tunneling, resonant tunneling, or quantum interference. It can use both simplified and sophisticated models and enables one to evaluate a wide variety of devices and configurations. The capabilities of NANODEV are illustrated by examples.     

Robust dual-quantisation multibit sigma-delta modulator

A new dual-quantisation sigma-delta modulator is proposed, which introduces an additional feedback path in the input of the second integrator. In this way, unlike other dual-quantisation architectures, larger signal-to-noise ratios can be obtained by means of aggressive noise-shaping, like in a conventional multibit modulator. The proposed modulator is also shown to be more robust against non-idealities than other dual-quantisation architectures.     

RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

LiNbO3 optical waveguides formed in a new proton source

Proton-exchanged planar waveguides have been fabricated on Z-cut and X-cut lithium niobate crystals by using a new proton source formed by a mixture of benzoic and adipic acids. Waveguide index profiles and optical characteristics have been obtained at different values of the adipic-benzoic acid concentration ratio. The samples have been structurally characterized by Raman and infrared (IR) absorption spectroscopy and double-crystal X-ray diffraction. Good quality samples have been fabricated by using 30 mol% ratio dilution, showing very low scattering levels (<0.1 dB/cm), relatively high electrooptic coefficient (r₃₃=0.88 pm/V), and low relative percentage of interstitial protons (26%). The main factor limiting the waveguide optical properties is the substitutional-interstitial proton ratio, which can be easily controlled to produce good quality waveguides. A demonstration of the repeatability of the exchange process in the acid mixture is also provided     

The measurement of solar array discharges in a simulated spaceenvironment

A spacecraft in a plasma builds up charge on all the dielectric surfaces and interfaces. Once the net charge exceeds the dielectric breakdown of the material, a discharge occurs. One of the more susceptible pieces of equipment is the antenna/receiver system. The radiated E-field may be strong enough to create an ambiguous signal which may be misinterpreted by the system electronics and cause a system malfunction. A technique is developed to monitor the radiated E-field of materials discharging in an electron environment, using vacuum chambers for measuring the material discharges which are made of highly reflective materials. These chambers affect the radiated E-field due to multiple reflections from the walls. The technique developed defines a method for correcting the effects caused by the measurement facilities. The methodology is: monitor the radiated E-field with a broadband dipole antenna, and digitize the radiated signal as a function of time. Determine the frequency response of the radiated E-field using an FFT algorithm. Measure the transmission and reflection characteristics of the two-port network inside the measurement chamber, and determine the impedance network from the measured E-parameters across the frequency band of interest. Transform the measured E-field frequency response through the impedance network to obtain the frequency response of the actual radiated discharge current. Find the inverse FFT of this response to obtain the actual radiated discharge current response. This technique aids in the prediction of the E-field coupling into receive antennas on-board actual satellites     

Scattering from and penetration into a dielectric-filled conductingcylinder with multiple apertures

The theory of characteristic modes for aperture problems is used in this paper to solve the equivalent magnetic current and aperture fields due to a conducting cylinder with multiple slots. It is assumed that these slots are illuminated by either a transverse electric (TE) or a transverse magnetic (TM) plane wave and the media inside and outside the cylinder exhibit different electromagnetic properties. The formulation is given for the general case and numerical results for a limited number of slots are presented     

Crosstalk between microstrip transmission lines

Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk     

Microscopic simulation of electronic noise in semiconductormaterials and devices

We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n⁺nn ⁺ structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices