A comparative study of DPSK and OOK WDM transmission over transoceanic distances and their performance degradations due to nonlinear phase noise

We have compared experimentally the transmission performance of return-to-zero differential phase-shift keying (RZ-DPSK) with RZ-ON-OFF keying (OOK), nonreturn-to-zero differential phase-shift keying (NRZ-DPSK), and NRZ-OOK for 100/spl times/10-Gb/s transmission with a spectral efficiency of 0.22 b/s/Hz over transoceanic distances. The Q degradation of the RZ-DPSK after transmission over 9180 km was 3 dB greater than that of RZ-OOK. The experimental results clearly showed the major cause of degradation for DPSK is not cross-phase modulation but self-phase modulation. The calculated nonlinear phase noise, i.e., the Gordon-Mollenauer effect, agreed with the experimental results. A distributed-Raman-amplifier assisted erbium-doped-fiber-amplified transmission line acted well in reducing the nonlinear phase noise.     

Planar lightwave integrated circuits with embedded actives for board and substrate level optical signal distribution

This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors.     

Reliability studies of MOCVD TiSiN and EnCoRe Ta(N)/Ta

Passivated single damascene copper SiO₂ damascene lines were evaluated in combination with TiSiN and Ta(N)/Ta diffusion barriers. Leakage current, breakdown and time-dependent dielectric breakdown properties were investigated on a wafer level basis for temperatures ranging between room temperature and 150 °C. It is found that the leakage performance of the wafers with a TiSiN barrier is better at room temperature, but at 150 °C the performance levels out with Ta(N)/Ta. Time-dependent dielectric breakdown measurements at 150 °C show that the lifetime of the interconnect is higher with the selected Ta(N)/Ta barrier than for TiSiN.     

Finite element analysis of electromagnetic scattering from a cavity

A finite element method (FEM) is implemented to compute the radar cross section of a two-dimensional (2D) cavity embedded in an infinite ground plane. The method is based on the variational formulation which uses the Fourier transform to couple the fields outside the cavity and those inside the cavity; hence, the scattering problem can be reduced to a bounded domain. The convergence of the discrete finite element problem is analyzed. Numerical results are presented and compared with those obtained by the standard finite element-Green function method and by the 2D integral equation method.     

Self-reflective segmentation of human bodily motions using recurrent neural networks

For realizing a naturalistic collaboration between the human and the robot, we have to establish the intention sharing from the series of motion data that are observed and exchanged between the human and the machine. In a word, this is a problem to detect "meanings" out of the digitized data stream. In this paper, we propose a novel approach based on semiosis, and present a method of interpreting bodily motions using recurrent neural networks called Elman networks. We made some experiments using the raw data acquired while a human performs a simple task of fetching objects by stretching and folding his/her arm, and demonstrate that the network can learn invariant features of the generalized motion concepts, classify the motion by referring to self-organized memory structure, and understand a task structure of the observed human bodily motion. These capabilities are essential for machine intelligence to establishing the human-robot shared autonomy, a new style of human-machine collaboration proposed in the area of robotics.     

Evaluation and optimization of package processing and design through solder joint profile prediction

Solder joints are generated using a variety of methods to provide both mechanical and electrical connection for applications such as flip-chip, wafer level packaging, fine pitch, ball-grid array, and chip scale packages. Solder joint shape prediction has been incorporated as a key tool to aid in process development, wafer level and package level design and development, assembly, and reliability enhancement. This work demonstrates the application of an analytical model and the Surface Evolver software in analyzing a variety of solder processing methods and package types. Bump and joint shape prediction was conducted for the design of wafer level bumping, flip-chip assembly, and wafer level packaging. The results from the prediction methodologies are validated with experimentally measured geometries at each level of design.     

A Multilayer Optical Packet Switching Network Based on the Kautz Graph and Optical Passive Star Couplers

The multihop optical network is the most appropriate solution to satisfy the increasing applications of Internet services. This paper extends the regular Kautz graph to one with multiple layers in order to produce more architectural variations. The connectivity between adjacent layers utilizes the systematic connection patterns of a regular Kautz graph. A routing algorithm based on its property is presented. Optical passive star (OPS) couplers are adopted to implement our new topologies. Three scheduling criteria that can solve the contention problem in the intermediate nodes are evaluated and compared in terms of their capability to improve the accessibility.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

High dynamic range InP HBT delta-sigma analog-to-digital converters

To date, the development of multifunction multicarrier digital receivers for cellular base station and military communications applications has been limited by the demanding dynamic range requirements for the analog-to-digital converter (ADC). The use of oversampling delta-sigma modulators provides a promising approach to overcoming the dynamic range barriers Nyquist-rate converters face in the same applications. This paper discusses issues involved in the design of high-speed high dynamic range wide-band delta-sigma ADCs for such communications applications. Test results of prototype designs are also presented. The delta-sigma modulators described in this paper operate at sampling frequencies ranging from 1 to 2.5 GHz with center frequencies ranging from dc to 100 MHz, providing between 74 and 84.2 dB signal-to-noise ratio (12 and 13.7 bits) for bandwidths of 25 and 12.5 MHz, respectively. The loop filters are continuous-time low-pass and bandpass implementations of order 6 and 10, and were fabricated in an InP heterojunction bipolar (HBT) technology. A typical tenth-order design consumes 6 W of power and occupies a die area of 23.5 mm/sup 2/.     

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.