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141.
Depletion and hillock formation were examined in-situ in a scanning electron microscope (SEM) during electromigration of bamboo
Al interconnect segments. Hillocks formed directly at the anode ends of the segments by epitaxial addition of Al at the bottom
Al/TiN interface. Depletion occurred nonuniformly from the cathode end and stopped once the distance between the leading void
and the hillock reached the critical length for electromigration at the given current density. A modified equation for the
drift velocity is proposed, which includes the effect of nonuniform depletion and predicts that interconnects with nonuniform
depletion are more reliable than those with uniform depletion. 相似文献
142.
143.
A beam propagation method (BPM) based on the finite element method (FEM) is described for longitudinally varying three-dimensional (3-D) optical waveguides. In order to avoid nonphysical reflections from the computational window edges, the transparent boundary condition is introduced. The present algorithm using the Pade approximation is, to our knowledge, the first wide-angle finite element beam propagation method for 3-D waveguide structures. To show the validity and usefulness of this approach, numerical results are shown for Gaussian-beam excitation of a straight rib waveguide and guided-mode propagation in a Y-branching rib waveguide 相似文献
144.
Douay M. Xie W.X. Taunay T. Bernage P. Niay P. Cordier P. Poumellec B. Dong L. Bayon J.F. Poignant H. Delevaque E. 《Lightwave Technology, Journal of》1997,15(8):1329-1342
A comprehensive survey of photosensitivity in silica glasses and optical fiber is reviewed. Recent work on understanding the mechanisms contributing to germanium or aluminum doped fiber photosensitivity is discussed within the framework of photoelastic densification models 相似文献
145.
Sugawara F. Aoki K. Yamaguchi H. Sasaki K. Sasaki T. Fujisaki H. 《Electron Device Letters, IEEE》1997,18(10):483-485
A new lateral MOS-gated thyristor, called the Base-Current-Controlled Thyristor, is described. This device is designed so that most holes at the on-stage reach the P base through the floating P+ region adjacent to the P base and the on-state MOSFET. At the turn-off stage, the interruption of the hole current to the P base due to switching off the above MOSFET occurs simultaneously with the conventional turn-off operation. The concept of this device is verified experimentally by using the fabricated lateral device with the external MOSFET. This device exhibits a better trade-off relation between the on-state voltage and the turn-off time compared uith the conventional MOS-gated thyristor 相似文献
146.
Yamada T. Kawakami Y. Nakano T. Mutoh N. Orihara K. Teranishi N. 《Electron Devices, IEEE Transactions on》1997,44(10):1580-1587
This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed 相似文献
147.
I. L. Eremenko M. A. Golubnichaya S. E. Nefedov A. A. Sidorov D. A. Nesterenko N. P. Konovalova L. M. Volkova L. T. Eremenko 《Russian Chemical Bulletin》1997,46(9):1595-1598
Thetrans-[Pt(NC5H4C(O)NHC2H4ONO2)2Cl2] complex (2) was prepared by the reaction of nicorandyl (N-nitroethoxynicotinamide), which is widely used in cardiology, with K2PtCl4 in water. The structure of2 was established by X-ray structural analysis. It was found that complex2 exhibits high antitumor activity, in particular, antimetastatic activity, unlike the analogous CuII complex with bromine atoms.
Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 9, pp. 1672–1675, September, 1997. 相似文献
148.
T. I. Voronina T. S. Lagunova M. P. Mikhailova K. D. Moiseev M. A. Sipovskaya Yu. P. Yakovlev 《Semiconductors》1997,31(8):763-767
Galvanomagnetic phenomena and photoconductivity in broken-gap type-II GaInAsSb/p-InAs heterojunctions with different levels of doping of the solid solution with donor (Te) or acceptor (Zn) impurities have
been investigated. It has been determined that in such structures an electronic channel, which determines the galvanomagnetic
effects in a wide range of doping levels, is present at the heterojunction. A sharp decrease of the Hall mobility was observed
in the experimental heterostructures with a high level of doping of the epitaxial layer with an acceptor impurity. The observed
effect is due to exhaustion of the electronic channel as a result of carrier localization in potential wells at the heterojunction.
Fiz. Tekh. Poluprovodn. 31, 897–901 (August 1997) 相似文献
149.
S. A. Gurevich T. A. Zaraiskaya S. G. Konnikov V. M. Mikushkin S. Yu. Nikonov A. A. Sitnikova S. E. Sysoev V. V. Khorenko V. V. Shnitov Yu. S. Gordeev 《Physics of the Solid State》1997,39(10):1691-1695
The concentration and chemical state of copper in the subsurface region of Cu/SiO2 composite films obtained by simultaneous magnetron sputtering from two sources (Cu and SiO2) are determined by x-ray photoelectron spectroscopy (XPS). It is established that copper in the as-grown film is primarily in the form of unoxidized atoms dispersed in a SiO2 matrix. Annealing of the film results in practically no oxidation, but about 70% of the copper atoms condense into metallic clusters with sizes below 10 Å in the subsurface region and about 50 Å in the bulk of the film. The changes in the binding energy of core electrons, and especially in the energies of Auger electrons, are so large in this situation that photoelectron and Auger spectroscopy are efficient methods for monitoring the chemical state of this composite material. 相似文献
150.
Ya. V. Fattakhov M. F. Galyautdinov T. N. L’vova I. B. Khaibullin 《Technical Physics》1997,42(12):1457-1459
The first results regarding the formation of a two-dimensional periodic structure of local melting regions on a silicon surface
upon pulsed light irradiation are presented. The conditions are established, and the mechanism of the formation of such structures
is discussed.
Zh. Tekh. Fiz. 67, 97–99 (December 1997) 相似文献