Ring-opening reactions of arylvinylidenecyclopropanes with diaryl diselenide upon heating: formation of 1,2-diarylselenocyclopentene derivatives

Arylvinylidenecyclopropanes undergo a novel reaction upon heating at 150 °C with diaryl diselenide to give the corresponding 1,2-diarylselenocyclopentene derivatives in good to high yields within 1.5 h. The further transformation of 1,2-diarylselenocyclopentene derivatives has been disclosed.     

Simultaneous all-optical inverted and noninverted wavelength conversion using a single-stage fiber-optical parametric amplifier

We have demonstrated, for the first time to our knowledge, simultaneous all-optical inverted and noninverted wavelength conversion by using a single-stage two-pump fiber-optical parametric amplifier with an extinction ratio between 7 and 14 dB over 24 nm.     

Characteristics of a 12-domain MVA-LCD

A multi-domain (12-domain) vertical alignment liquid crystal display (MVA-LCD) device is proposed and its electro-optic characteristics evaluated through a 3-D simulator. The MVA-LCD exhibits advantages in wide viewing angle, high transmittance, fast response time, and small color shift when a pair of wide view crossed circular polarizers is employed. Potential applications of this MVA-LCD for high quality LCD TVs and computer monitors are emphasized.     

Microstructure evolution of the Sn–Ag–y%Cu interconnect

The lead free Sn–Ag–y%Cu (y = 0.0, 0.5, 1.0 and 2.0) interconnect interfacial microstructures and the microstructure evolution under thermal treatment (isothermal aging, 150 °C/1000 h) were studied in detail by using surface microetching microscopy and cross section microscopy. The corresponding mechanical and reliability behaviors were evaluated by performing shear test and fracture mode analysis before and after the thermal treatment. The results indicate: (i) The interconnects could have different microstructures and intermetallic compound (IMC), depending on the Cu content. The Cu–Sn IMC could have microstructures that were clusters or protrusion-like, Augustine grass leaf-like, scissor-like, tweezers-like, etc. (ii) Ag₃Sn IMCs were not observed at time zero for any interconnect groups, but they occurred after the aging for all groups. The Ag₃Sn IMC could have different microstructures, again depending on Cu content. For low Cu content, the Ag₃Sn IMCs were granules or nodules; for higher Cu content, Ag₃Sn IMCs were plate-like. (iii) The growth of Ag₃Sn plates was promoted by the growth of Cu–Sn IMCs, but indirectly linked to the Cu content. (iv) High Cu content (1.0 wt% and higher) could degrade the mechanical and reliability performances of the LF interconnect by providing a brittle joint, which was mainly achieved through the substantial growth of Cu–Sn IMCs and Ag₃Sn plates.     

Low-temperature conductance measurements of surface states in HfO2–Si structures with different gate materials

Metal-oxide-semiconductor capacitors based on HfO₂ gate stack with different metal and metal compound gates (Al, TiN, NiSi and NiAlN) are compared to study the effect of the gate electrode material on the trap density at the insulator–semiconductor interface.C–V and G–ω measurements were made in the frequency range from 1 kHz to 1 MHz in the temperature range 180–300 K. From the maximum of the plot G/ω vs. ln(ω) the density of interface states was calculated, and from its position on the frequency axis the trap cross-section was found. Reducing temperature makes it possible to decrease leakage current through the dielectric and to investigate the states located closer to the band edge.The structures under study were shown to contain significant interface trap densities located near the valence band edge (around 2×10¹¹ cm⁻²eV⁻¹ for Al and up to (3.5–5.5)×10¹² cm⁻² eV⁻¹ for other gate materials). The peak in the surface state distribution is situated at 0.18 eV above the valence band edge for Al electrode. The capture cross-section is 5.8×10⁻¹⁷ cm² at 200 K for Al–HfO₂–Si structure.     

Quantum-mechanical effects and gate leakage current of nanoscale n-type FinFETs: A 2d simulation study

This paper simulates a kind of new sub-50 nm n-type double gate MOS nanotransistors by solving coupled Poisson-Schrödinger equations in a self-consistent manner with a finite element method, and presents a systematic simulation-based study on quantum-mechanical effects, gate leakage current of FinFETs. The simulation results indicate that the deviation from the classical model becomes more important as the gate oxide, gate length and Fin channel width becomes thinner and the Fin channel doping increases. Gate tunneling current density reduces with the body thickness decreasing. Excessive scaling increases the gate current below Fin thickness of 5 nm. The gate current can be dramatically reduced beyond 10¹⁷ cm⁻³ with the Fin body doping increasing. In order to understand the influence of electron confinement, quantum mechanical simulation results are also compared with the results from the classical approach. Our simulation results indicate that quantum mechanical simulation is essential for the realistic optimization of the FinFET structure.     

飞机系统内的干扰源及干扰防止方法

现代飞机电子设备越来越多,而一个良好的电磁环境对于飞机系统正常工作有着重要的作用.该文通过对飞机上干扰源的认识、分析及干扰的防止方法,对从事飞机电气设计的工程技术人员起到一些借鉴作用.     

Butterfly and Nest-Shaped Tp*-W-Cu-S Cluster Monomers and Dimers with Hexamethylenetetramine as Ligand: Anion-Dependent Structures and Nonlinear Optical Properties

The assembly of[Et4N][Tp*WS3](1) with CuX (Tp* =hydridotris(3,5-dimethylpyrazol-1-yl)borate;X =Cl,Br,and I) or[Cu(MeCN)4][PF6]in the presence of tetratopic liga...     

ED-SWE: Event detection based on scoring and word embedding in online social networks for the internet of people

Online social media networks are gaining attention worldwide, with an increasing number of people relying on them to connect, communicate and share their daily pertinent event-related information. Event detection is now increasingly leveraging online social networks for highlighting events happening around the world via the Internet of People. In this paper, a novel Event Detection model based on Scoring and Word Embedding (ED-SWE) is proposed for discovering key events from a large volume of data streams of tweets and for generating an event summary using keywords and top-k tweets. The proposed ED-SWE model can distill high-quality tweets, reduce the negative impact of the advent of spam, and identify latent events in the data streams automatically. Moreover, a word embedding algorithm is used to learn a real-valued vector representation for a predefined fixed-sized vocabulary from a corpus of Twitter data. In order to further improve the performance of the Expectation-Maximization (EM) iteration algorithm, a novel initialization method based on the authority values of the tweets is also proposed in this paper to detect live events efficiently and precisely. Finally, a novel automatic identification method based on the cosine measure is used to automatically evaluate whether a given topic can form a live event. Experiments conducted on a real-world dataset demonstrate that the ED-SWE model exhibits better efficiency and accuracy than several state-of-art event detection models.     

迭代学习控制在飞机全电刹车系统中的应用

飞机全电刹车系统具有传统的液压刹车系统不可比拟的优势,是未来飞机刹车系统的发展方向。针对现有液压刹车系统控制律的不足和全电刹车系统的特点,建立了以飞机纵向速度、滑移率为状态变量,滑移率为输出变量的刹车系统非线性状态方程。根据滑移率与结合系数的关系,在线辨识不同路面条件下的最大结合系数和最佳滑移率,提出了在常规PI控制器的基础上,施加一D型迭代学习前馈控制器的控制策略,以提高系统的快速跟随性,并将最佳滑移率作为迭代学习控制的期望输出。经过对干跑道状态下的仿真验证,表明加入迭代学习控制律后,可以满足飞机全电刹车系统的技术性能,在刹停时间、刹停距离及刹车效率等方面得到了改善,具有良好的收敛速度、稳定性和跟踪性。