In situ electron beam irradiated rapid growth of bismuth nanoparticles in bismuth-based glass dielectrics at room temperature

In this study, in situ control growth of bismuth nanoparticles (Bi⁰ NPs) was demonstrated in bismuth-based glass dielectrics under an electron beam (EB) irradiation at room temperature. The effects of EB irradiation were investigated in situ using transmission electron microscopy (TEM), selected-area electron diffraction and high-resolution transmission electron microscopy. The EB irradiation for 2–8 min enhanced the construction of bismuth nanoparticles with a rhombohedral structure and diameter of 4–9 nm. The average particle size was found to increase with the irradiation time. Bismuth metal has a melting point of 271 °C and this low melting temperature makes easy the progress of energy induced structural changes during in situ TEM observations. This is a very useful technique in nano-patterning for integrated optics and other applications.     

Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (V _g). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.     

A dual polarized aperture coupled circular patch antenna using a C-shaped coupling slot

The design and development of a dual linearly polarized aperture coupled circular microstrip patch antenna at C-band are presented. The antenna uses a novel configuration of symmetric and asymmetric coupling slots. Variations in isolation between orthogonal feedlines and antenna axial ratio with the position of coupling slots are studied and broadband isolation and axial ratio are achieved. The prototype antenna yields 7.6 dBi peak gain, 70/spl deg/ 3-dB beam width, 25 dB cross-polarization levels and an isolation better than 28 dB between the two ports. With an external quadrature hybrid coupler connected to the two orthogonal feedlines, the antenna yields 3-dB axial ratio bandwidth of more than 30% at 5.8 GHz.     

Millimeter wave attenuation in relation to rain rate distribution over a tropical station

Rain, perhaps, is the worst offender for utilising Millimeterwaves in practice. This paper describes the rain rate distribution from which millimeterwave attenuation distribution have been attempted. Results reveal that in our location (Calcutta: lat 23°N long 88.5°E) the rain rate distribution fits well with normal distribution. The cumulative distribution of rain rate also prompted the present authors to find out rain attenuation cumulative distribution for both terrestrial and earth-space paths in millimeterwave band.     

Universality in the effective pair interaction ofd-shell metals — Compressibility and vacancy formation energy of 3d-liquid metals

Like liquid alkali metalsd-shell liquid metals show scaling behaviour in structure and interaction potentials. A realistic interaction potential model, properly parametrized can reasonably describe the universality in the isothermal compressibility and vacancy formation energy of 3d-liquid metals in electron ion plasma model.     

Effective intermolecular potential energy function. Hydrogen-bonded structure of water

The average effective pair potential energy function between two neighbouring molecules has been computed from the centre structure factor data of water and this shows an unusual feature at short range due to strong hydrogen bonding. The effective potential is highly temperature dependent and at elevated temperature it turns out to be approximately like that for simple liquids. The effective potential can be represented satisfactorily by the square well model.     

Separation of Variables for a Lattice Integrable System and the Inverse Problem

We investigate the relation between the local variables of a discrete integrable lattice system and the corresponding separation variables, derived from the associated spectral curve. In particular, we have shown how the inverse transformation from the separation variables to the discrete lattice variables may be factorized as a sequence of canonical transformations.     

Hydroxylation of the silica in microfabricated thin layer chromatography plates as probed by time‐of‐flight secondary ion mass spectrometry and diffuse reflectance infrared Fourier transform spectroscopy

Microfabricated silica thin layer chromatography (TLC) plates have previously been prepared on patterned carbon nanotube forests. The high temperatures used in their fabrication reduce the number of hydroxyl groups on their surfaces. Fortunately, silica can be rehydroxylated. In diffuse reflectance infrared Fourier transform spectroscopy (DRIFT), a silanol peak below 3740 cm^?1 indicates a well‐hydroxylated silica surface that is fit for chromatography. Hydroxylations of our materials with HF are so effective that it is not possible to discern the position of this peak. In contrast, this signal is discernable when the plates are treated with NH₄OH. To find a more convenient method for studying the surfaces of TLC plates, time‐of‐flight secondary ion mass spectroscopy (ToF‐SIMS) was considered. ToF‐SIMS is advantageous because multiple microfabricated TLC plates must be scraped to obtain enough silica for one DRIFT analysis, while static SIMS can be performed on very small regions (500 × 500 µm² or less) of individual plates. Ratios of the SiOH⁺ and Si⁺ ToF‐SIMS signals for microfabricated TLC plates correlated well with ~3740 cm^?1 silanol peaks from DRIFT. Thus, SIMS allows direct analysis of all of our treated and untreated plates, including those hydroxylated with HF. The best hydroxylation condition for HF, which was better than any studied for NH₄OH, was around 150 ppm at room temperature. The best hydroxylation condition for NH₄OH was 50 °C for 72 h. ToF‐SIMS versus DRIFT results of commercial TLC plates were also obtained and evaluated. Copyright © 2014 John Wiley & Sons, Ltd.     

Magnetic exchange interactions and magneto-structural correlations in heterobridged μ-phenoxo-μ(1,1)-azide dinickel(II) compounds: a combined experimental and theoretical exploration

This investigation presents the syntheses, crystal structures, magnetic properties, and density functional theoretical modeling of magnetic behavior of two heterobridged μ-phenoxo-μ(1,1)-azido dinickel(II) compounds [Ni(II)(2)(L(1))(2)(μ(1,1)-N(3))(N(3))(H(2)O)]·CH(3)CH(2)OH (1) and [Ni(II)(2)(L(2))(2)(μ(1,1)-N(3))(CH(3)CN)(H(2)O)](ClO(4))·H(2)O·CH(3)CN (2), where HL(1) and HL(2) are the [1+1] condensation products of 3-methoxysalicylaldehyde and 1-(2-aminoethyl)-piperidine (for HL(1))/4-(2-aminoethyl)-morpholine (for HL(2)), along with density functional theoretical magneto-structural correlations of μ-phenoxo-μ(1,1)-azido dinickel(II) systems. Compounds 1 and 2 crystallize in orthorhombic (space group Pbca) and monoclinic (space group P2(1)/c) systems, respectively. The coordination environments of both metal centers are distorted octahedral. The variable-temperature (2-300 K) magnetic susceptibilities at 0.7 T of both compounds have been measured. The interaction between the metal centers is moderately ferromagnetic; J = 16.6 cm(-1), g = 2.2, and D = -7.3 cm(-1) for 1 and J = 16.92 cm(-1), g = 2.2, and D(Ni1) = D(Ni2) = -6.41 cm(-1) for 2. Broken symmetry density functional calculations of exchange interaction have been performed on complexes 1 and 2 and provide a good numerical estimate of J values (15.8 cm(-1) for 1 and 15.35 cm(-1) for 2) compared to experiments. The role of Ni-N bond length asymmetry on the magnetic coupling has been noted by comparing the structures and J values of complexes 1 and 2 together with previously published dimers 3 (Eur. J. Inorg. Chem. 2009, 4982), 4 (Inorg. Chem. 2004, 43, 2427), and 5 (Dalton Trans. 2008, 6539). Our extensive DFT calculations reveal an important clue to the mechanism of coupling where the orientation of the magnetic orbitals seems to differ with asymmetry in the Ni-N bond lengths. This difference in orientation leads to a large change in the overlap integral between the magnetic orbitals and thus the magnetic coupling. DFT calculations have also been extended to develop several magneto-structural correlations in this type of complexes and the correlation aim to focus on the asymmetry of the Ni-N bond lengths reveal that the asymmetry plays a proactive role in governing the magnitude of the coupling. From a completely symmetric Ni-N bond length, two behaviors have been noted: with a decrease in bond length there is an increase in the ferromagnetic coupling, while an increase in the bond lengths leads to a decrease in ferromagnetic interaction. The later correlation is supported by experiments. The magnetic properties of 1, 2, and three previously reported related compounds have been discussed in light of the structural parameters and also in light of the theoretical correlations determined here.     

Nonvolatile Memory Effect in Indium Gallium Arsenide-Based Metal–Oxide–Semiconductor Devices Using II–VI Tunnel Insulators

This paper reports the successful use of ZnSe/ZnS/ZnMgS/ZnS/ZnSe as a gate insulator stack for an InGaAs-based metal–oxide–semiconductor (MOS) device, and demonstrates the threshold voltage shift required in nonvolatile memory devices using a floating gate quantum dot layer. An InGaAs-based nonvolatile memory MOS device was fabricated using a high-κ II–VI tunnel insulator stack and self-assembled GeO _x -cladded Ge quantum dots as the charge storage units. A Si₃N₄ layer was used as the control gate insulator. Capacitance–voltage data showed that, after applying a positive voltage to the gate of a MOS device, charges were being stored in the quantum dots. This was shown by the shift in the flat-band/threshold voltage, simulating the write process of a nonvolatile memory device.