Strong visible PL from the nc-Si thin film by Ni silicide mediated crystallization

We studied the growth of nanocrystalline silicon (nc-Si) thin film exhibiting a strong room temperature photoluminescence (PL) at 1.81–2.003 eV. The amorphous silicon was crystallized by Ni silicide mediated crystallization (Ni SMC) and then Secco-etched to exhibit the PL. The PL peak energy and intensity increase with increasing the metal density on the a-Si because of the reduction in the grain size down to 2 nm. The photoluminescence energy and peak intensity depend strongly on the Secco etch time because the grain size is reduced by etching the grain boundaries.     

Correlation between Al2O3 particles and interface of Al-Al2O3 coatings by cold spray

Al-Al₂O₃ composite coatings with different Al₂O₃ particle shapes were prepared on Si and Al substrate by cold spray. The powder compositions of metal (Al) and ceramic (Al₂O₃) having different sizes and agglomerations were varied into ratios of 10:1 wt% and 1:1 wt%. Al₂O₃ particles were successfully incorporated into the soft metal matrix of Al. It was found that crater formation between the coatings and substrate, which is typical characteristic signature of cold spray could be affected by initial starting Al₂O₃ particles. In addition, when the large hard particles of fused Al₂O₃ were employed, the deep and big craters were generated at the interface between coatings and hard substrates. In the case of pure soft metal coating such as Al on hard substrate, it is very hard to get proper adhesion due to lack of crater formation. Therefore, the composite coating would have certain advantages.     

The Fabrication and Characterization of Single‐Component Polymeric White‐Light‐Emitting Diodes

By using Ni⁰‐mediated polymerization, we have systematically synthesized a series of fluorene‐based copolymers composed of blue‐, green‐, and red‐light‐emitting comonomers with a view to producing polymers with white‐light emission. 2,7‐Dibromo‐9,9‐dihexylfluorene, {4‐(2‐[2,5‐dibromo‐4‐{2‐(4‐diphenylamino‐phenyl)‐vinyl}‐phenyl]‐vinyl)‐phenyl}‐diphenylamine (DTPA), and 2‐{2‐(2‐[4‐{bis(4‐bromo‐phenyl)amino}‐phenyl]‐vinyl)‐6‐tert‐butyl‐pyran‐4‐ylidene}‐malononitrile (TPDCM) were used as the blue‐, green‐, and red‐light‐emitting comonomers, respectively. It was found that the emission spectra of the resulting copolymers could easily be tuned by varying their DTPA and TPDCM content. Thus with the appropriate red/green/blue (RGB) unit ratio, we were able to obtain white‐light emission from these copolymers. A white‐light‐emitting diode using the polyfluorene copolymer containing 3 % green‐emitting DTPA and 2 % red‐emitting TPDCM (PG3R2) with a structure of indium tin oxide/poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonic acid)/PG3R2/Ca/Al was found to exhibit a maximum brightness of 820 cd m^–2 at 11 V with Commission Internationale de L'Eclairage (CIE) coordinates of (0.33,0.35), which are close to the standard CIE coordinates for white‐light emission (0.33,0.33).     

Some functional equations originating from number theory

We will introduce new functional equations (3) and (4) which are strongly related to well-known formulae (1) and (2) of number theory, and investigate the solutions of the equations. Moreover, we will also study some stability problems of those equations.     

A 6 GHz 68 mW BiCMOS phase-locked loop

The design of a 6 GHz fully monolithic phase-locked loop fabricated in a 1 μm, 20 GHz BiCMOS technology is described. The circuit incorporates a voltage-controlled oscillator that senses and combines the transitions in a ring oscillator to achieve a period equal to two ECL gate delays. A mixer topology is also used that exhibits full symmetry with respect to its inputs and operates with supply voltages as low as 1.5 V. Dissipating 60 mW from a 2 V supply, the circuit has a tracking range of 300 MHz, an rms jitter of 3.1 ps, and phase noise of -75 dBc/Hz at 1 kHz offset     

A linear minimum mean square error multiuser receiver inRayleigh-fading channels

We generalize the multiuser (CDMA spread spectrum) communication systems to the fading environments. We first extend Verdu's (1986) conventional optimum receiver to Rayleigh-fading environments and then evaluate its performance. Having no knowledge of the received power at the receiving end, we therefore need an estimator to efficiently estimate the received signal strength of each user in fading environments. A linear minimum mean square error (LMMSE) unbiased estimator is proposed to attain this goal. By using the minimum mean square error (MMSE) Bayesian estimation, we further propose the LMMSE bit estimator for efficient demodulation. Its performance is close to the optimum multiuser receiver but with a much simpler polynomial complexity. To further reduce the complexity, we extend the LMMSE estimator to the sequential LMMSE estimator. In sequential estimation, we do not need to implement the matched filter banks and to perform the matrix inversion when estimating. In addition, it converges after approximately 2k iterations, where k is the number of users. With this fast convergence property and the simple structure, the sequential LMMSE estimator provides an attractive alternative to the implementation of a multiuser system     

A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using aNAND flash memory technology

A 3.3-V 16-Mb nonvolatile memory having operation virtually identical to DRAM with package pin compatibility has been developed. Read and write operations are fully DRAM compatible except for a longer RAS precharge time after write. Fast random access time of 63 ns with the NAND flash memory cell is achieved by using a hierarchical row decoder scheme and a unique folded bit-line architecture which also allows bit-by-bit program verify and inhibit operation. Fast page mode with a column address access time of 21 ns is achieved by sensing and latching 4 k cells simultaneously. To allow byte alterability, nonvolatile restore operation with self-contained erase is developed. Self-contained erase is word-line based, and increased cell disturb due to the word-line based erase is relaxed by adding a boosted bit-line scheme to a conventional self-boosting technique. The device is fabricated in a 0.5-μm triple-well, p-substrate CMOS process using two-metal and three-poly interconnect layers. A resulting die size is 86.6 mm², and the effective cell size including the overhead of string select transistors is 2.0 μm²     

Evaluation of compatibility in polymer blend systems by simultaneous DSC-FTIR measurement

The concept of crystallization dynamics method evaluating the miscibility of binary blend system including crystalline component was proposed. Three characteristic rates, nucleation, crystal growth rates (N*, G*) and growth rate of conformation (G _c*) were used to evaluate the miscibility of PVDF/at-PMMA and PVDF/iso-PMMA by the simultaneous DSC-FTIR. N*, G* and G _c* depended remarkably on both temperature and blend fraction (ϕ_PMMA) for PVDF/at-PMMA system, which indicated the miscible system. PVDF/iso-PMMA showed small ϕ_PMMA dependency of N*, G* and G _c*, was estimated the immiscible system. The ΔT/T _m⁰ values, corresponding to Gibbs energy required to attend the constant G* and G _c*, evaluated from G* and G _c* showed the good linear relationships with different slope. The experimental results suggested that the concentration fluctuation existed in PVDF/iso-PMMA system.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.