镧系金属一氢化物有效芯势研究

采用Cundari和Stevens等推导的有效芯势对镧系金属一氢化物进行了理论计算，以探讨镧系金属元素与氢的相互作用。结果表明所有镧系金属一氢化物基态时理论上是稳定的，最稳定的是SmH,最不稳定的是DyH;键长计算结果显示，基态时镧系金属一招兵买马花物有独立王国 收缩现象发生；红外振动频率理论计算值与实验结果一致；成键轨道中，金属原子轨道的贡献主要是s轨道和d轨道：从CeH至ErH(GdH)例外）随着外层电子的增加s轨道成分逐渐增大d轨道成分逐渐减小；从TmH和LuH（包括GdH)，成键轨道中金属原子轨道的贡献主要是d轨道，约为90％；约大多数镧系金属一氧化物的成键轨道中金属原子轨道f成分小于1％。     

On a stochastic nonlinear equation in one-dimensional viscoelasticity

In this paper we discuss an initial-boundary value problem for a stochastic nonlinear equation arising in one-dimensional viscoelasticity. We propose to use a new direct method to obtain a solution. This method is expected to be applicable to a broad class of nonlinear stochastic partial differential equations.

     

Sparse polynomials, redundant bases, gauss periods, and efficient exponentiation of primitive elements for small characteristic finite fields

Gauss periods give an exponentiation algorithm that is fast for many finite fields but slow for many other fields. The current paper presents a different method for construction of elements that yield a fast exponentiation algorithm for finite fields where the Gauss period method is slow or does not work. The basic idea is to use elements of low multiplicative order and search for primitive elements that are binomial or trinomial of these elements. Computational experiments indicate that such primitive elements exist, and it is shown that they can be exponentiated fast.     

Effects of annealing conditions on the electrical properties of Bi4-xNdxTi3O12 (x = 0.46) thin films processed at low temperature

Neodymium-substituted Bi₄Ti₃O₁₂ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as O₂, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization (P_r) of ∼48 μC/cm² with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in O₂ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller P_r than that annealed in oxygen. The difference of P_r of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. PACS 77.55.+f; 77.80.-e; 77.80.Fm; 81.15.-z     

Effect of misalignment on electrical characteristics of ACF joints for flip chip on flex applications

The effect of misalignment on the electrical properties of anisotropic conductive film (ACF) joints is investigated in this work. It is found that along with the increase of misalignment, the connection resistance of ACF joints increases. When the misalignment in x-direction is less than 5 μm, the increase rate of connection resistance is quite large. Then, along with the severity of misalignment, the increase rate becomes smaller. Finally, when the misalignment is close to 20 μm, the increase rate rises again. The Holm's electric contact theory is used for understanding the connection resistance variation. On the other hand, with the increase of misalignment in x-direction, the insulation resistance between ACF joints decreases. If the misalignment exceeded 10 μm, the decrease is prominent for the Ni particle ACF joints. This phenomenon can be explained by the effect of dielectric damage of the epoxy.Computer programs are also developed to calculate the variation of the probability of open and shorting after misalignment and predicate the maximum misalignment tolerance. The results show that the open and shorting probability increase abruptly after misalignment. On the view of pad parameters, the open probability is mainly related to the pad area, while the pads gap is critical to the shorting probability. Large pads gap (small pad width) can reduce the shorting probability obviously. On the other hand, enlarging the pad area by increasing pad length decreases the open probability significantly. So comparing to square shape pad, rectangle shape pad can reduce the failure probability greatly.     

Some formulae for the q-Bernoulli and Euler polynomials of higher order

The purpose of this paper is to give a proof of Kummer type congruence for the q-Bernoulli numbers of higher order, which is an answer to a part of the problem in a previous publication (see Indian J. Pure Appl. Math. 32 (2001) 1565-1570).     

Langmuir-Blodgett deposited cadmium gate inverted InP-GaInAs modulation-doped field-effect transistors

We report on the Langmuir-Blodgett film deposition and plasma etching of cadmium distearate on n-Gao.47Ino.53As to form a high-barrier-height Schottky barrier. Using this technique to form the gate electrode, we fabricated a 1?m-gate-length inverted InP-GalnAs modulation-doped field-effect transistor (MODFET) with an extrinsic transconductance of 170mS/mm and a cutoff frequencyfT of 19 GHz.     

光纤白光干涉仪等臂长技术研究

介绍了几种光纤干涉仪等臂长技术,比较了各自的优缺点和适用范围,对光纤干涉仪的平衡有较大的参考价值。