Resolvability theory for the multiple-access channel

We study the randomness needed for approximating the output distribution of a multiple-access channel, where the original input processes are independent of each other. The approximation is achieved by simulating (possibly alternative) input processes at each of the entries, where the sources of randomness available for the simulators are independent of each other, and the simulators do not cooperate. The resolvability region of a multiple-access channel is defined as the set of all random-bit rate pairs at which accurate output approximation is possible, where the simulation accuracy is measured by the variational distance between finite-dimensional output distributions. Inner and outer bounds on the resolvability region are derived, and close relations between the concepts of resolvability region and capacity region are demonstrated     

The relation between luminous properties and oxygen content inZnS:TbOF thin-film electroluminescent devices fabricated byradio-frequency magnetron sputtering method

The purpose of this paper is to study the relationship between the oxygen concentration and brightness degradation in ZnS:TbOF green thin-film electroluminescent (EL) devices. The characteristics including crystallinity, optical, and electrical properties were discussed. The brightness-voltage (B-V) measurement results shelved that with higher oxygen-content in ZnS:TbOF phosphor layer, lower brightness was measured. It was consistent with the poor crystallinity, worse photoluminescent intensity, and easier to get moisture in the oxygen-rich (O/Tb>1) phosphor film. Furthermore, deep level transient spectroscopy (DLTS) measurements identified that when the O/Tb ratio was greater than 1, the oxygen-related deep hole traps E_H1 and/or E_H2 could be detected in the ZnS:TbOF phosphor layer. These E _H1 and/or E_H2 traps were believed to be the main killers for the brightness of the device since they capture most of the holes from the generated electron-hole pairs. This evidence strongly supports that the modified energy transfer model is more dominant than direct impact excitation during the luminescent process     

A floating-gate analog memory device for neural networks

A floating-gate MOSFET device that can be used as a precision analog memory for neural network LSIs is described. This device has two floating gates. One is a charge-injection gate with a Fowler-Nordheim tunnel junction, and the other is a charge-storage gate that operates as a MOSFET floating gate. The gates are connected by high resistance, and the charge-injection gate is small so that its capacitance is much less than that of the charge-storage gate. By applying control pulses to the charge-injection gate, it is possible to charge and discharge the MOSFET floating gate in order to modify the MOSFET current with high resolution over 10 b. The charge injection can be carried out without disturbing the MOSFET output current with high voltage control pulses. This device is useful for on-chip learning in analog neural network LSIs     

P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

On self-routing in Clos connection networks

A self-routing connection network is a switching device where the routing of each switch can be determined in terms of the destination addresses of its inputs alone, i.e. independent of the routing information regarding the other switches in the network. One family of connection networks that were considered in the literature for self-routing are Clos networks. Earlier studies indicate that some Clos networks can be self-routed for certain permutations. In this paper, it is proved that the only category of Clos networks that can be self-routed for all permutations are those with at most two switches in their outer stages     

Dynamic programming implementation on array processor architectures

Dynamic Programming (DP) applies to many signal and image processing applications including boundary following, the Viterbi algorithm, dynamic time warping, etc. This paper presents an array processor implementation of generic dynamic programming. Our architecture is a SIMD array attached to a host computer. The processing element of the architecture is based on an ASIC design opting for maximum speed-up. By adopting a torus interconnection network, a dual buffer structure, and a multilevel pipeline, the performance of the DP chip is expected to reach the order of several GOPS. The paper discusses both the dedicated hardware design and the data flow control of the DP chip and the total array.This work was supported in part by the NATO, Scientific and Environmental Affairs Division, Collaborative Research Grant SA.5-2-05(CRG.960201)424/96/JARC-501.     

H2S·HOH or H2O·HSH, which is more stable in the water-hydrogen sulfide complex?

High-level ab initio calculations are carried out to study the relative stability of the two hydrogen bonded structures of water-hydrogen sulfide complex, one with water as the proton donor (A) and the other with hydrogen sulfide as the proton donor (B). The results show that structure A is considerably more stable than B at the correlated level, which is in contrast with previous results obtained from Hartree-Fock calculations.     

电磁波在包含各向异性媒质多层介质中传播的分析

对电磁波在包含各向异性媒质多层介质中的传播进行分析，给出了闭合形式的解，该结构可用作法拉第旋转器，与其它准光元件组合构成的准光环行器或隔离器。也可用作辐射口径，通过改变磁化场方向和强度实现波束扫描或极化变化，给出了法拉第旋转角计算结果和实验结果。     

Efficient synthesis of an aldehyde‐capped polythiophene containing fluorinated electron‐withdrawing groups

To incorporate an acceptor type polythiophene segment onto a supramolecular block copolymer for potential light harvesting applications, effective synthetic routes for the end‐functionalized and acceptor‐substituted polythiophenes are critical. The Ullmann coupling reaction can be utilized to obtain electron‐deficient polythiophenes and to attach terminal thiophene units that carry functional groups. In this article, the reactions involving a 2,5‐dibromothiophene monomer containing an electron‐withdrawing fluorinated ester and 5‐bromo‐2‐thiophenecarboxaldehyde (the end‐capper) were studied in detail. It was found that the Ullmann coupling reaction of the dibromide is very fast (completed in a few minutes) and the terminal bromine group does not survive long under the reaction condition. These findings lead to the development of an effective procedure for aldehyde end‐capping of electron‐deficient polythiophenes. Polymers with molecular weights around 4000 Da are routinely obtained. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 41–47, 2007     

Investigations of He implantation and subsequent annealing effects in InP

The influence of 70 keV He⁺ ion implantation and subsequent annealing of Cz-indium phosphide (InP) samples has been investigated using a slow positron beam-based Doppler broadening spectrometer. Three samples with ion fluences of 1 × 10¹⁶, 5 × 10¹⁶ and 1 × 10¹⁷ cm⁻² were studied in the as-implanted condition as well as after annealing at 640 °C for times between 5 and 40 min. It was found that the line-shape parameter of the positron-electron annihilation peak in the implanted layer increases after 5 min annealing, then after longer annealing times it starts to decline gradually until it reaches a value close to the value of the as-grown sample. This implies that vacancy-like defects can be created in InP by He implantation followed by short-thermal annealing at T > 600 °C. Comparison of the results with a study where cavities were observed in He-implanted InP has been carried out.