凹整数规划的分枝定界解法

凹整数规划是一类重要的非线性整数规划问题，也是在经济和管理中有着广泛应用的最优化问题．本文主要研究用分枝定界方法求解凹整数规划问题，这一方法的基本思想是对目标函数进行线性下逼近，然后用乘子搜索法求解连续松弛问题．数值结果表明，用这种分枝定界方法求解凹整数规划是有效的．     

无线技术的新领域--WUSB

无线USB(WUSB)技术是一个全新的无线传输标准.实现USB(通用串行总线)无线化以后,既可以保持有线USB的高速传输等优点,又可以去掉电缆的羁绊,给各种设备带来更大的便捷和移动性.文中首先介绍了WUSB技术的由来--UWB技术规范的标准化难以确定,然后对WUSB技术的规范标准进行了阐述,最后概述了WUSB技术的发展现状及目前和今后的技术研发重点,并对WUSB的发展前景进行了展望.     

基于移动代理的安全研究

移动代理计算模式较传统的分布式计算模式有明显的优势,而伴随它有诸多安全问题出现,这使得它没有得到十分广泛的应用。本文针对代理自身的安全问题,分析了代理可能受到的攻击,并提出了一个安全方案。     

On maximum-length linear congruential-sequences-based low-density parity-check codes

This letter extends a low-density parity-check code construction using maximum-length linear congruential sequences by Prabhakar and Narayanan. The corresponding bipartite graphs of their construction were guaranteed to have a girth larger than four by a sufficient condition. However, their sufficient condition was limited to regular codes and data-node degree equal to three. The extension in this letter allows arbitrary data-node degrees and is applicable to irregular codes. Further, simpler sufficient conditions are derived and larger girths are addressed.     

Elliptic equations with BMO coefficients in Reifenberg domains

The inhomogeneous Dirichlet problems concerning divergence form elliptic equations are studied. Optimal regularity requirements on the coefficients and domains for the W^1,p theory, 1 < p < ∞, are obtained. The principal coefficients are supposed to be in the John‐Nirenberg space with small BMO seminorms. The domain is a Reifenberg domain. These conditions for the W^1,p theory not only weaken the requirements on the coefficients but also lead to a more general geometric condition on the domains. In fact, these domains might have fractal dimensions. © 2004 Wiley Periodicals, Inc.     

Crystallographic report: Bis{[diacetyl‐bis(2,6‐isopropylphenylimine)]nickel(I)(µ‐chloro)}

The first α‐diimine nickel(I) complex having a chloro bridge is reported. The centrosymmetric dinuclear structure of {[ArN?C(Me)C(Me)?NAr]NiCl}₂[Ar?2,6?C₆H₃(i‐Pr)₂] features two chelating α‐diimine ligands and two bridged chlorine atoms, so that a distorted tetrahedral N₂Cl₂ coordination geometry for nickel results. Copyright © 2004 John Wiley & Sons, Ltd.     

Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

Single to 16-Channel Wavelength Conversion at 10 Gb/s Based on Cross-Gain Modulation of ASE Spectrum in SOA

A simple scheme for single to multi-channel wavelength conversion based on cross-gain modulation of amplified spontaneous emission (ASE) spectrum in semiconductor optical amplifier (SOA) is described. Single to 16-channel wavelength conversion at 10 Gb/s is first demonstrated without any additional probe lights, the modulation information carried by input signal could be converted into arbitrary many channels if only the demultiplexer with enough channels is exploited. Output performance and pattern effects are investigated experimentally.     

Tri-Gate Bulk MOSFET Design for CMOS Scaling to the End of the Roadmap

A tri-gate bulk MOSFET design utilizing a low-aspect-ratio channel is proposed to provide an evolutionary pathway for CMOS scaling to the end of the roadmap. 3-D device simulations indicate that this design offers the advantages of a multi-gate FET (reduced variability in performance and improved scalability) together with the advantages of a conventional planar MOSFET (low substrate cost and capability for dynamic threshold-voltage control).