Novel In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistors on GaAs substrate with InxGa1−xP graded buffer layers

Compositionally graded In_xGa_1−xP (x=0.48→x=1) metamorphic layers have been grown on GaAs substrate by solid source molecular beam epitaxy using a valved phosphorus cracker cell. Three series of samples were grown to optimize the growth temperature, V/III ratio and grading rate of the buffer layer. X-ray diffraction (XRD) and photoluminescence (PL) were used to characterize the samples. The following results have been obtained: (1) XRD measurement shows that all the samples are nearly fully strain relaxed and the strain relaxation ratio is about 96%; (2) the full-width at half-maximum (FWHM) of the XRD peak shows that the sample grown at 480°C offers better material quality; (3) the grading rate does not influence the FWHM of XRD and PL results; (4) adjustment of the V/III ratio from 10 to 20 improves the FWHM of XRD peak, and the linewidth of PL peak is close to the data obtained for the lattice-matched sample on InP substrate. The optimization of growth conditions will benefit the metamorphic HEMTs grown on GaAs using graded InGaP as buffer layers.     

Effective identification of dominant fully absorbing sets for Raptor-like LDPC codes

The error-rate floor of low-density parity-check (LDPC) codes is attributed to the trapping sets of their Tanner graphs. Among them, fully absorbing sets dominantly affect the error-rate performance, especially for short blocklengths. Efficient methods to identify the dominant trapping sets of LDPC codes were thoroughly researched as exhaustively searching them is NP-hard. However, the existing methods are ineffective for Raptor-like LDPC codes, which have many types of trapping sets. An effective method to identify dominant fully absorbing sets of Raptor-like LDPC codes is proposed. The search space of the proposed algorithm is optimized into the Tanner subgraphs of the codes to afford time-efficiency and search-effectiveness. For 5G New Radio (NR) base graph (BG) 2 LDPC codes for short blocklengths, the proposed algorithm finds more dominant fully absorbing sets within one seventh of the computation time of the existing search algorithm, and its search-effectiveness is verified using importance sampling. The proposed method is also applied to 5G NR BG1 LDPC code and Advanced Television Systems Committee 3.0 type A LDPC code for large blocklengths.     

Indicator Sensor Development and Fuel Cell Degradation Imaging

Although extensive research has been conducted, understanding the exact phenomena occurring during the operation of polymer electrolyte fuel cells (PEFCs) remains difficult. This research attempted to identify new reasons for the reduced performance of PEFC using an imaging technique. To begin with, H⁺ and OH⁻ indicator sensors, which display red, blue, and green values (RGB) using digital microscopes, are developed and attached to each electrode of a membrane electrode assembly to enable quantitative analysis of ion generation. The proposed reaction in the fuel cell can be confirmed, and various reactions occurring in the electrode can be examined using this approach. In particular, H⁺ is generated at the anode and cathode of the anion exchange membrane fuel cell, which is found to be a major cause of performance deterioration.     

Dispersion measurement technique based on the self-seeding laser oscillation of a Fabry-Perot laser diode

A simple dispersion measurement technique has been proposed and demonstrated by using the self-seeding laser oscillation of a Fabry-Perot laser diode through an optical closed-loop path. When the multi-mode optical pulses emitted from the laser are re-injected into the laser after traversing a fiber-under-test, a single mode laser oscillation occurs through the closed-loop path due to the group velocity difference between the pulses of different wavelengths. We measured the dispersion parameter of the fiber-under-test from the modulation frequency changes required to induce single-mode laser oscillations through the optical closed-loop path. The maximum measurement error was less than 1.5% for the optical fibers as compared with a commercial instrument.     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.     

Studies on the performance characteristics and improvements of the piezoelectrically-driven micro gas compressors

This study presents the main characteristics of a micro gas compressor produced by microfabrication techniques on silicon wafers. The compressor consists of a compression chamber, check valves and a silicon membrane where the piezoelectric bimorph actuator is installed. Compressor performance was investigated under various working conditions of input voltage and frequency to the actuator at several downstream back pressures. Volume stroke ratio is a critical parameter for gas compressors. However, micro actuators do not generally produce large displacement, so the volume stroke ratio of the micro compressor is expected to be significantly less than that of conventional mechanical compressors. Therefore, the possibility of using dual compression was also investigated in order to improve micro compressor performance. The performance of the micro compressor is evaluated in this study through experiments and simulation.     

High performance Zn–Sn–O thin film transistors with Cu source/drain electrode

Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μ_FE) of 13.2 cm²/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (V_th) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and V_th values of 0.48 V/decade and 3.0 V, respectively as well as a high μ_FE value of 18.7 cm²/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)