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Electroluminescence (EL) properties of Si-based light emitting diodes with β-FeSi2 particles active region grown by reactive deposition epitaxy are investigated. EL intensity of β-FeSi2 particles versus excitation current densities has different behaviors at 8, 77 K and room temperature, respectively. The EL peak energy shifted from 0.81 to 0.83 eV at 77 K with the increase of current density from 1 to 70 A/cm2. Temperature dependence of the peak energy can be well fitted by semi-empirical Varshni's law with the parameters of α=4.34 e-4 eV/K and β=110 K. These results indicate that the EL emission originates from the band-to-band transition with the band gap energy of 0.824 eV at 0 K. 相似文献
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N. Seki K. Takakura T. Suemasu F. Hasegawa 《Materials Science in Semiconductor Processing》2003,6(5-6):307-309
[1 0 0]-oriented β-FeSi2 films were grown on Si(0 0 1) substrates by molecular beam epitaxy (MBE) with a deposited Si to Fe atomic ratio (Si/Fe ratio) varied from 1.6 to 2.8. It was found that the conduction type of the β-FeSi2 films changed from p- to n-type between the deposited Si/Fe=2.4 and 2.8. Rutherford Back Scattering (RBS) measurements revealed that the real Si/Fe ratio of β-FeSi2 is 2.0–2.1 for all the samples after 900°C annealing for 14 h, showing that stoichiometry of the grown films is almost satisfied even though the deposited Si/Fe ratio was away from stoichiometry. 相似文献