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21.
22.
Hierarchically ordered structures facilitate the incorporation of diverse functions simultaneously. The present report introduces a simple and novel strategy for producing hierarchically ordered polymeric films. Hierarchical ordering of aqueous droplets on a polymer solution is realized by the imposition of physical confinement via various shaped gratings. After drying of the solution, well‐ordered hierarchical structures were fabricated in the remaining polymer film. The size of the grating structure and the lattice size of spontaneous hexagonally packed aqueous pores comprise two different length scales, thereby offering multiscale ordering. Interfacial wetting of the polymer solution to the grating surface was crucial in terms of obtaining a highly ordered structure that can be tuned by dissolving a small amount of surfactant in the polymer solution. The present novel approach provides a new opportunity for lithography‐free fabrication of complex hierarchical structures. 相似文献
23.
24.
Herein, we report an efficient process for preparing monodisperse Au@SiO2 nanoparticles using homogeneous shaking and without the use of surface‐coupling silane agents or large stabilizers. The resulting pure‐silica surface of the Au@SiO2 nanoparticles is very important for straightforward surface functionalization with different functional groups via well‐established silica surface chemistry. Subsequent covalent bioconjugation of the aldehyde‐functionalized Au@SiO2 nanoparticles with various biomolecules is successfully employed to make robust nanoprobes for fast, colorimetric DNA and protein detection based on the sequence‐specific hybridization properties of DNA and the specific binding affinity between proteins, respectively. 相似文献
25.
Zhishen Mo Lixiao Wang Hongfang Zhang Ping Han Baotong Huang 《Journal of Polymer Science.Polymer Physics》1987,25(9):1829-1837
Wide-angle X-ray scattering from presumed block copolymers of polypropylene (PP) and ethylene-propylene copolymer (EPR), i.e., PP-EPR and PP-EPR-PP, synthesized by sequential polymerization with δ-TiCl3? Et2AlCl, was examined and compared with WAXS of mechanical blends and chain-transfer mixtures of PP and EPR with comparable compositions. The peak at 2θ = 20° for both the copolymers and the mixtures was attributed to the γ modification of PP in EPR. A strong variation in the ratio of diffraction intensities I040/I110 of PP in block copolymers and mixtures was explained in terms of crystallite growth in different directions. Analysis of the patterns and calculation of crystallinity, crystallite size, and lattice parameters led to the conclusion that block structure existed in the prepared copolymers. 相似文献
26.
Hee Seok Choi Young Han Kim Shun Myung Shin 《Journal of polymer science. Part A, Polymer chemistry》2006,44(8):2428-2439
An in‐line monitoring device using a quartz crystal resonator for thin film polymerization was proposed, and its performance has been evaluated by implementing in the UV polymerization of 2‐hydroxyethyl methacrylate with a photoinitiator of 1‐chloroanthraquinone. Because the variation of resonant resistance of the resonator is proportional to the square root of viscosity change that is closely related to the polymerization degree, the resistance can be used as a measure of the polymerization degree. The resistance measurements were compared with the outcome of instrumental analyses of polymerization degree using an FTIR spectrometer and a gel permeation chromatograph. The experimental results showed that the resistance measurements were consistent with the experimental outcome of the instrumental analyses, and this indicates the effectiveness of the proposed device. Owing to the simplicity and availability of the resonator system, its wide utilization in the monitoring of a variety of film polymerization processes, including photoresistor application, is expected. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 2428–2439, 2006 相似文献
27.
The solubility and diffusion coefficient of carbon dioxide in intermediate‐moisture starch–water mixtures were determined both experimentally and theoretically at elevated pressures up to 16 MPa at 50 °C. A high‐pressure decay sorption system was assembled to measure the equilibrium CO2 mass uptake by the starch–water system. The experimentally measured solubilities accounted for the estimated swollen volume by Sanchez–Lacombe equation of state (S‐L EOS) were found to increase almost linearly with pressure, yielding 4.0 g CO2/g starch–water system at 16 MPa. Moreover, CO2 solubilities above 5 MPa displayed a solubility increase, which was not contributed by the water fraction in the starch–water mixture. The solubilities, however, showed no dependence on the degree of gelatinization (DG) of starch. The diffusion coefficient of CO2 was found to increase with concentration of dissolved CO2, which is pressure‐dependent, and decrease with increasing DG in the range of 50–100%. A free‐volume‐based diffusion model proposed by Areerat was employed to predict the CO2 diffusivity in terms of pressure, temperature, and the concentration of dissolved CO2. S‐L EOS was once more used to determine the specific free volume of the mixture system. The predicted diffusion coefficients showed to correlate well with the measured values for all starch–water mixtures. © 2005 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 607–621, 2006 相似文献
28.
Akinwande A.I. Ruden P.P. Vold P.J. Han C.-J. Grider D.E. Narum D.H. Nohava T.E. Nohava J.C. Arch D.K. 《Electron Devices, IEEE Transactions on》1989,36(10):2204-2216
A planar ion-implanted self-aligned gate process for the fabrication of high-speed digital and mixed analog/digital LSI/VLSI integrated circuits is reported. A 4-b analog-to-digital converter, a 2500-gate 8×8 multiplier/accumulator, and a 4500-gate 16×16 complex multiplier have been demonstrated using enhancement-mode n+ -(Al,Ga)As/MODFETs, superlattice MODFETs, and doped channel heterostructure field-effect transistors (FETs) whose epitaxial layers were grown by molecular-beam epitaxy. With nominal 1-μm gate-length devices, direct-coupled FET logic ring oscillators with realistic circuit structures have propagation delays of 30 ps/stage at a power dissipation of 1.2 mW/stage. In LSI circuit operation, these gates have delays of 89 ps/gate at a power dissipation of 1.38 mW/gate when loaded with an average fan-out of 2.5 gates and about 1000 μm of high-density interconnects. High-performance voltage comparator circuits operated at sampling rates greater than 2.5 GHz at Nyquist analog input rates and with static hysteresis of less than 1 mV at room temperature. Fully functional 4-b analog-to-digital circuits operating at frequencies up to 2 GHz were obtained 相似文献
29.
The employment of the Zn(Se,Te) pseudo-graded contacting scheme to p-type ZnSe-based alloys contributes directly to the recent
demonstration of room temperature continuous-wave operation of II– VI green-blue laser diodes. Contact ohmicity is maintained
down to cryogenic temperatures which enabled the investigation of electrical transport properties associated with the p-type
nitrogen-doped ZnSe, Zn(S,Se), and (Zn,Mg)(S,Se). The observation of both persistent photoconductivity and a metastable population
of holes which are in thermodynamic equilibrium with hydrogenic acceptors having reduced activation energy suggests the presence
of a DX-like behavior for holes in p-type (Zn,Mg)(S,Se). 相似文献
30.
Strain compensated InGaAs-GaAsP-InGaP laser 总被引:1,自引:0,他引:1
N.K. Dutta W.S. Hobson D. Vakhshoori H. Han P.N. Freeman J.F. de Jong J. Lopata 《Photonics Technology Letters, IEEE》1996,8(7):852-854
The performance characteristics of InGaAs-GaAsP-InGaP strain compensated laser emitting near 1 /spl mu/m are reported. The ridge waveguide lasers have room temperature threshold current of 18 mA and differential quantum efficiency of 0.45 W/A/facet. The linewidth enhancement factor is smaller and gain coefficient is larger for these strain compensated lasers compared to that for conventional strained layer laser. This may be due to higher effective compressive strain in the light emitting layer of these devices which reduces the effective mass. The observed larger gain coefficient is consistent with the measured larger relaxation oscillation frequency of these lasers compared to that for a conventional strained layer laser. 相似文献