Structural and electrical properties of core–shell structured GaP nanowires with outer Ga2O3 oxide layers

This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga₂O₃ layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm²/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH^- or O₂ ^- ions on the Ga₂O₃ surface shell. Using an intrinsic Ga₂O₃ shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O₂. The GaP nanowire devices were fabricated as sensors for NO₂, NH₃, and H₂ gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p     

Imaging in turbid media with intensity-modulated lasers

We describe the formation of a narrow beam for intensity-modulated electromagnetic radiation propagating through highly scattering materials. We propose to use this beam to reconstruct images, similar to X-ray back-projection techniques. For sufficiently high modulation frequency, the photon density wave is primarily carried by photons that suffer small or no large-angle scattering, which gives rise to the beam’s narrow divergence. The beam-narrowing concept is supported by large-scale numerical simulations to examine the quality of the imaging.     

无线信道中的电波传播

分析了信号在无线信道中传输时所经受的两种衰落,介绍了主要的无线传播模型,在此基础上提出了对抗衰落的措施。     

双极型静电感应晶体管开关时间的测量与分析

从理论和实验两方面对静电感应晶体管（ＢＳＩＴ）的开关时间进行了分析和测量，提出了简单的分析方法，将影响ＢＳＩＴ开关时间的各个因素归结为结构因子和材料因子，从而简化了分析影响ＢＳＩＴ开关时间的因素，对于ＢＳＩＴ的实际工艺，结构设计有指导意义。     

Penalty interference of nonlinear intra-channel effects and PMD inultra high-speed TDM systems

Penalty interference of nonlinear propagation impairments and polarisation mode dispersion (PMD) caused signal distortions is experimentally investigated     

关于B值随机和的完全收敛性的进一步讨论

该文在深入揭示B值非随机和完全收敛性中的一系列等价关系的基础上，给出了随机和完全收敛的充分条件，改进和完善了有关文献中的既有成果，并对矩条件的必要性问题做了初步讨论．     

动态聚焦电子枪的模拟与实验研究

动态聚焦技术是为了满足大屏幕高分辨率彩色显像管及高分辨率彩色显示管的发展需求而产生的一项新技术。在本文中，作者首先提出了一种动态聚焦电子枪结构，进行了数值计算与分析，制作了动态聚焦电子枪并装管实验。通过对实验样管的测试与分析。证实该枪性能良好，动态聚集效果明显。     

InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

Measurement and modeling of self-heating in SOI nMOSFET's

Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries     

Finite-difference analysis of dielectric-loaded cavities using thesimultaneous iteration of the power method with the Chebyshevacceleration technique

A numerical procedure using the finite-difference technique, simultaneous iteration based on the power method, and the Chebyshev-polynomial preconditioning is proposed to analyze dielectric-loaded cavities. The merit of this method is that no matrix inversions are invoked and the convergence rate of the power method is greatly accelerated by the preconditioning. The TE, TM, and hybrid modes in axisymmetrical cavities loaded with a rod or ring dielectric resonator are analyzed. For the hybrid modes, an H_r-H_z formulation is proposed. Accurate numerical results are obtained efficiently and no spurious solutions are found by the present method