Microprocessor-Based Control of an Ion Beam Deposition System

A microprocessor-based system with 32 A/D, 24 D/A, and 16 ac load controllers, has been designed and built to monitor and control an ion beam thin-film deposition system. The A/D and D/A channels have electrical isolation of 7.5 kV between channels and between input and output. The microprocessor system keeps the ion beam deposition parameters stable for extended periods of operation and it is proposed as a means to greatly simplify switching from one deposition species to another to grow thin multilayer or alloy films.     

Effect of trapping centers of luminescent properties of bismuth orthogermanate

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 6, pp. 970–975, June, 1991.     

Analytic calculation of scaling dimensions: Tricritical hard squares and critical hard hexagons

The finite-size corrections, central chargesc, and scaling dimensionsx of tricritical hard squares and critical hard hexagons are calculated analytically. This is achieved by solving the special functional equation or inversion identity satisfied by the commuting row transfer matrices of these lattice models at criticality. The results are expressed in terms of Rogers dilogarithms. For tricritical hard squares we obtainc=7/10,x=3/40, 1/5, 7/8, 6/5 and for hard hexagons we obtainc=4/5,x=2/15, 4/5, 17/15, 4/3, 9/5, in accord with the predictions of conformal and modular invariance.     

Stationary turbulent closure via the Hopf functional equation

Exact closed-form solutions are exhibited for the Hopf equation for stationary incompressible 3D Navier-Stokes flow, for the cases of homogeneous forced flow (including a solution with depleted nonlinearity) and inhomogeneous flow with arbitrary boundary conditions. This provides an exact method for computing two- and higher-point moments, given the mean flow.     

Unitarity condition in covariant quantum field theory with indefinite metric

V. A. Steklov Mathematics Institute, USSR Academy of Sciences. Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 79, No. 3, pp. 347–358, June, 1989.     

The effect of secondary scattering on the induced current in a longwire over an imperfect ground from an incident EMP

The effect of secondary scattering that is produced by the induced current in an infinitely long, finitely conducting wire over a plane, finitely conducting earth from an incident electromagnetic pulse is investigated. This is accomplished by finding the field of a Hertzian dipole over the earth and identifying the part that is due to secondary scattering. Frequency-domain results for the overall induced current require that certain infinite integrals be numerically evaluated. Fourier inversion to the time domain in turn requires the numerical evaluation of another infinite integral. When the results are compared to those obtained when secondary scattering is ignored, it is found that secondary scattering slightly increases the current for the case of broadside incidence and reduces it for the case of grazing incidence by as much as two orders of magnitude. Peak currents are much smaller than previously thought. These general results hold for all of the earth parameters that were used in the study     

Power-dependent dispersion in far-off-resonant raman scattering

We investigate the saturation effects of power broadening, Stark shifting, and population transfer on Stokes conversion in stimulated Raman scattering. We do not make the usual rotating wave approximation because the detuning from the next electronic state is assumed to be in the optical regime. Retaining the counter-rotating terms allows an exact determination of the pump and Stokes indexes of refraction. Steady-state solutions for the Stokes intensity and phase are obtained and the effects of making the rotating wave approximation (RWA) are discussed. Finally, we examine the behavior of these solutions for Stokes conversion in hydrogen gas when geometric propagation is appropriate.     

The electrical resistivity of some uranium tellurides

Electrical resistivity of U₃Tein4, U₂Te₃ (cubic) and UTe₃ has been measured over temperature range 4.2–300 K. The two former compounds appear to be semimetallic conductors while the last one has semiconducting character. The results are discussed in the terms of available magnetic data.