A numerical study of an unsteady laminar flow in a doubly constricted 3D vessel

Unsteady flow dynamics in doubly constricted 3D vessels have been investigated under pulsatile flow conditions for a full cycle of period T. The coupled non‐linear partial differential equations governing the mass and momentum of a viscous incompressible fluid has been numerically analyzed by a time accurate Finite Volume Scheme in an implicit Euler time marching setting. Roe's flux difference splitting of non‐linear terms and the pseudo‐compressibility technique employed in the current numerical scheme makes it robust both in space and time. Computational experiments are carried out to assess the influence of Reynolds' number and the spacing between two mild constrictions on the pressure drop across the constrictions. The study reveals that the pressure drop across a series of mild constrictions can get physiologically critical and is also found to be sensitive both to the spacing between the constrictions and the oscillatory nature of the inflow profile. The flow separation zone on the downstream constriction is seen to detach from the diverging wall of the constriction leading to vortex shedding with 3D features earlier than that on the wall in the spacing between the two constrictions. Copyright © 2002 John Wiley & Sons, Ltd.     

The case of missing incommensurate smectic A phases

Two binary mixtures of polar liquid crystal materials were previously reported to exhibit three incommensurate smectic A phases predicted for such materials on the basis of phenomenological theory. Results of our recent high-resolution X-ray scattering experiments show that no incommensurate phases exist in the two systems. Wide coexistence regions are found at first order transitions between various frustrated smectic phases of these mixtures. These regions were previously identified as the incommensurate smectic A phases. The phase diagrams of the two systems determined with high-resolution X-ray technique are shown to be in excellent agreement with Baroisa-Prost-Lubensky theory.     

A novel scheme for protection of power semiconductor devicesagainst short circuit faults

Power semiconductor devices find wide application in modern power electronic converters. Protection of these devices against overload/short circuit conditions is of paramount importance. Present day protection topologies employing different circuits have invariably one main drawback in that the fault current reaches the set value before action is initiated to trip the system. This poses a severe stress on the device. Hence an adequate safety margin has to be necessarily provided to prevent excessive device stresses and care has to be taken to see that the device is operated well within its safe operating areas. The present paper proposes a method wherein the slope or rate of rise of the fault current is detected and once the slope exceeds the set reference, action is initiated to trip the system much before the fault current reaches dangerous levels. The method provides a fast means of detection of overload and short circuit currents and can be conveniently adopted for the protection of devices in power transistor/IGBT based inverters against short circuited load conditions or shoot through faults. The possible reduction of stresses in the power devices are also highlighted     

ShOC rectifier: a new metal-semiconductor device with excellent forward and reverse characteristics

We report a new structure, called the shielded ohmic contact (ShOC) rectifier which utilizes trenches filled with a high-barrier metal to shield an Ohmic contact during the reverse bias. When the device is forward biased, the ohmic contact conducts with a low forward drop. However, when reverse biased, the Ohmic contact is completely shielded by the high-barrier Schottky contact resulting in a low reverse leakage current. Two dimensional numerical simulation is used to evaluate and explain the superior performance of the proposed ShOC rectifier.     

Kinetics and mechanism of polymerization of methyl methacrylate initiated by stibonium ylide

Homopolymerization of methyl methacrylate (MMA) was carried out in the presence of triphenylstibonium 1,2,3,4-tetraphenyl-cyclopentadienylide as an initiator in dioxane at 65°C±0·l°C. The system follows non-ideal radical kinetics (R _p ∝ [M]^1·4 [I]^0·44 @#@) due to primary radical termination as well as degradative chain-transfer reaction. The overall activation energy and average value ofk ₂ ^p /k _t were 64 kJmol⁻¹ and 0.173 × 10⁻³ 1 mol⁻¹ s⁻¹ respectively     

Profile design considerations for minimizing base transit time inSiGe HBT's

A unified closed form analytical model for base transit time of SiGe HBT's for uniform and exponential base dopant distributions with different Ge profiles in the base (e.g., box, trapezoidal, triangular) is reported. The model is subsequently used to study the design of Ge profile for different base doping profiles, including that of epitaxial base transistors. Consistent with the reported results, our unified model predicts that beyond a certain total Ge content, there is very little reduction in τ_b.SiGe. It is further demonstrated that the trapezoidal Ge profile with X_T~0.8W_B gives near optimal base transit time for all doping profiles considered. Our analysis shows that 1) for a given base width and intrinsic base resistance, the exponential base doping profile with Ge yields the least value of τ_{b, SiGe} and 2) for a given peak base doping concentration and the intrinsic base resistance, the uniform base doping with Ge gives minimum τ_{b, SiGe}. Also, the need for keeping the total base Ge content constant while optimizing the Ge profile in the base is emphasized by showing that a false minimum for τ_{b, SiGe} may appear if the total Ge content is not kept constant     

A highly selective and sensitive thorium(IV) PVC membrane electrode based on a dithio-tetraaza macrocyclic compound.

A poly(vinyl chloride)-based membrane composed of dithio-tetraaza macrocyclic compound as a neutral carrier with sodium tetraphenylborate (NaTPB) as an anion excluder and nitrobenzene (NB) as plasticizer was prepared and investigated as a Th(IV)-selective electrode. The electrode exhibits a Nernstian slope of 14.2 +/- 0.3 mV per decade over a wide concentration range (1.0 x 10(-6) to 1.0 x 10(-1) M) with a detection limit of 8.0 x 10(-7) M between pH 3.5 and 9.5. The response time of the sensor is about 10 s and it can be used over a period of 5 months without any divergence in potential. The proposed membrane sensor revealed a good selectivity for Th(IV) over a wide variety of other metal ions and proved to be a better electrode in many respects than those reported in the literature. It was successfully applied as an electrode indicator as well as in the direct determination of thorium ions in standard and real samples.     

Design,synthesis, and characterization of main‐chain,aromatic polyesters based on 3,4‐ethylenedioxythiophene

A series of new thermoplastic polyesters based on 3,4‐ethylenedioxythiophene (EDOT) with flexible aliphatic spacers have been synthesized and characterized for the first time. The thermal properties of these polyesters based on EDOT are comparable to those of conventional polyesters based on the 1,4‐phenyl unit, indicating that EDOT is a viable replacement for the phenyl units. The glass‐transition and melting‐transition temperatures decrease monotonically with an increase in the spacer length. Theoretical calculations have revealed that the core angle for EDOT is comparable to that of unsubstituted thiophene and hence should be compatible with the formation of the mesophase. This has been confirmed experimentally by the synthesis of a main‐chain, thermotropic, liquid‐crystalline polyester based on EDOT that exhibits fluid birefringence. In fact, this is the first report in which a main‐chain, liquid‐crystalline polymer based on 3,4‐disubstituted thiophene has been successfully designed and synthesized. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3479–3486, 2006     

Structure–activity studies on the fungitoxicity of some triorganotin(IV) compounds

Seventeen triorganotin(IV) compounds, with the general formula R₃SnX, containing symmetrical and unsymmetrical combinations of alkyl and aryl groups on tin and with a wide variation in the non-carbon-bonded anionic (X) residues, were examined along with three formally pentacoordinated adducts of triaryltin chlorides with triphenylphosphine oxide for their antifungal activity against nine plant pathogenic and saprophytic fungi. The in vitro tests included inhibitory studies on radial growth, mycelial growth, spore germination, and germ tube elongation. A significant finding was the dependence of fungitoxicity on the nature of the X group in both the tributyltin and triaryltin series, in contrast to earlier published reports on the negligible influence of the X groups on overall toxicity relative to the R group. This suggests that the X group is significantly involved in transporting the biocide to the reactive sites, and that the X group which tends to confer increased solubility to the triorganotin compound gives rise to increased activity. In studies of R group variations, tri-iso-butyltin bromide was found to be much less fungitoxic than tri-n-butyltin compounds, a result which is reconcilable in terms of increased steric encumbrance at the tin site in the former case. The steric factor is also implicated in the reduced activities observed for tris(p-tolyl)tin and tris(p-chlorophenyl)tin compounds relative to (Ph₃SnX) towards most of the fungi screened in this study. In general, it was also noted that the triaryltins were more selective in their antifungal action than the trialkyltins, which exhibited broad spectral activity when applied at the concentration level of 10 μg cm^?3.