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951.
We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system.  相似文献   
952.
In this paper, we report on a novel family of monodisperse thermo‐sensitive core–shell hydrogel microspheres that is featured with high monodispersity and positively thermo‐responsive volume phase transition characteristics with tunable swelling kinetics, i.e., the particle swelling is induced by an increase rather than a decrease in temperature. The microspheres were fabricated in a three‐step process. In the first step, monodisperse poly(acrylamide‐co‐styrene) seeds were prepared by emulsifier‐free emulsion polymerization. In the second step, poly(acrylamide) or poly[acrylamide‐co‐(butyl methacrylate)] shells were fabricated on the microsphere seeds by free radical polymerization. In the third step, the core–shell microspheres with poly‐ (acrylamide)/poly(acrylic acid) based interpenetrating polymer network (IPN) shells were finished by a method of sequential IPN synthesis. The proposed monodisperse core–shell microspheres provide a new mode of the phase transition behavior for thermo‐sensitive “smart” or “intelligent” monodisperse micro‐actuators that is highly attractive for targeting drug delivery systems, chemical separations, sensors, and so on.  相似文献   
953.
The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi2 is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi2 in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi2 is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi2. Curiously enough, the formation of C49-TiSi2 appears thus as a major concern for the salicide process in flash memories.  相似文献   
954.
New polyaniline (PANI) asymmetric membranes were fabricated using a phase‐inversion technique with hexane as the coagulation bath. These membranes exhibit a dense structure with macrovoids distributed asymmetrically throughout the cross‐section. A stress–strain study demonstrated that the Young's modulus (1.421 GPa) and strain at break (7.6 %) of the new PANI asymmetric membranes prepared from hexane are approximately 12 and 4 times higher, respectively, than the values reported previously for the PANI integrally skinned asymmetric membranes (ISAMs) (123 MPa Young's modulus and 1.8 % strain at break). Furthermore, monolithic electrochemical actuators based on a single PANI asymmetric membrane were constructed, and a bending movement of up to 20 Hz was experimentally recorded in a hydrochloric acid aqueous solution. A lifetime of over 329 500 cycles was determined for these actuators at a ± 2° angular displacement (5 Hz). The lifetime is limited by a bending fatigue that creates a transversal crack on the PANI membrane at the air–water interface. Control over the actuator movement is also manifested by the linear dependences of the bending angle on the charge and of the angular velocity on the current. These relationships are independent of both the kind of applied electric signal and the frequency used.  相似文献   
955.
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.  相似文献   
956.
Traveling wave tubes (TWTs) used in multi-tone and digital communications applications are typically operated backed off from saturation in order to improve the amplifier linearity. This reduces the bit error rate (BER), decreases intermodulation distortion and lowers adjacent channel power; all at the expense of reducing the average output power. For emerging telecommunications applications, the average power requirement is increasing to provide higher bit rates and lower BER, and often exceeds the power obtainable from backed-off space or telecommunications TWTs. One solution is to power combine TWTs that are operated 3 to 10 dB backed off from saturation. Efficient power combining requires that the phase and gain of the signal from each TWT be closely matched. To understand the variation in these parameters across a build-set of tubes, the phase and gain versus drive of 35 Boeing S-band 5525H TWTs were measured. The standard deviation in the phase about the mean phase shift measured at saturation was found to be 2.6/spl deg/, with a related standard deviation of the gain compression at saturation of 0.22 dB. These levels result in small power combining losses and small errors in phased-array fed multi-beam antennas in broadband multi-tone applications.  相似文献   
957.
The asymptotic correction technique of Paine, de Hoog and Anderssen can dramatically improve the accuracy of finite difference or finite element eigenvalues at negligible extra cost if closed form expressions are available for the errors in a simpler related problem. This paper gives closed form expressions for the errors in the eigenvalues of certain Sturm–Liouville problems obtained by various methods, thereby increasing the range of problems for which asymptotic correction can achieve maximum efficiency. It also investigates implementation of the method for more general problems.  相似文献   
958.
Real-time electronic speckle pattern interferometry (ESPI) was used for tuning and visualization of natural frequencies of a trapezoidal plate. The plate was excited to resonant vibration by a sinusoidal acoustical source, which provided a continuous range of audio frequencies. Fringe patterns produced during the time-average recording of the vibrating plate—corresponding to several resonant frequencies—were registered. From these interferograms, calculations of vibrational amplitudes by means of zero-order Bessel functions were performed in some particular cases. The system was also studied analytically. The analytical approach developed is based on the Rayleigh–Ritz method and on the use of non-orthogonal right triangular co-ordinates. The deflection of the plate is approximated by a set of beam characteristic orthogonal polynomials generated by using the Gram–Schmidt procedure. A high degree of correlation between computational analysis and experimental results was observed.  相似文献   
959.
The effect of free carriers on the dispersion and damping of coupled phonon-plasmon modes is considered in the long-wave approximation. The electron and phonon scattering rate, as well as Landau damping, is taken into account.  相似文献   
960.
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