热象无损检测技术应用

本文将热象无损检测技术应用于鉴定受测物结构和性质,并测出受测物中的缺陷,实验结果取得了较为满意的进展。     

利用单模光纤中的交叉相位调制产生单周期化脉冲的研究

描述了利用光纤中的交叉相位调制（XPM）效应产生单周期化脉冲的基本原理.详细分析了不同初始脉冲条件对脉冲频谱展宽的影响，然后针对具体事例用分步傅里叶方法对分析结果进行了验证.最终得到了200—1000THz的超宽带频谱，并给出了理想压缩脉冲的时域脉宽和形状. 关键词： 单周期化脉冲 交叉相位调制 超宽带频谱     

一种间接测量圆柱形管内样品冲击波压力的方法

 描述了一种联合使用锰铜计和康铜计间接测量柱对称滑移爆轰条件下，金属管内样品中冲击波压力的方法。给出了冲击压缩方法合成纤锌矿型氮化硼（wBN）时的测量结果。结果表明：管内样品中压力范围大致在11.5~22 GPa范围内，满足冲击波合成wBN所需的压力条件；管内样品压力的发展变化具有不连续性。证明了这种间接测量管内压力的方法是可行的。     

A simulation study of long throw sputtering for diffusion barrierdeposition into high aspect vias and contacts

Modified sputtering techniques, such as long throw sputtering, collimation, and ionized sputtering, have been proposed to improve VLSI topography bottom coverage by narrowing the angular distribution of the sputter flux at the substrate and reducing subsequent flux shadowing at the bottom of topography. This paper first investigates a number of unique aspects involved in the simulation of long throw sputter systems. In particular, time importance of inhomogeneous film density and nonunity sticking coefficients are addressed. The second part of the paper presents a simulation study of long throw sputtering, providing a comparison to collimated and standard sputtering systems. The simulations are performed using the SIMSPUD/SIMBAD ballistic deposition tool. SIMSPUD is used to study film uniformity over a 300-mm wafer and to generate angular distributions at the center and edge of the wafer. The ability of SIMBAD to simulate directed sputtering systems is verified by direct comparison to Ti films deposited into oxide trenches. The importance of modeling the film microstructure is demonstrated by comparison between cross-sectional SEM's micrograph for evaporation and modeling results, such as long throw sputtering with a variety of substrate/target spacings, typical “standard” as well as “collimated” systems. SEM's of overhang structures and simulations are also presented to demonstrate nonunity sticking during the co-sputtering of TiW     

Copper as an electron trap in GaAs0.6P0.4

An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs_0.6P_0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0×10^–21 cm² and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.     

使用超声搅拌实现精密KOH各向异性体硅腐蚀

对使用超声搅拌和不加搅拌时(100)单晶硅的腐蚀特性进行了研究和对比.使用超声搅拌,可以得到光滑的、无小丘的腐蚀表面,整个硅片腐蚀深度的误差不超过1μm.实验结果表明,该方法可以有效地实现精密KOH各向异性体硅腐蚀.     

Synthesis,hole mobility,and photovoltaic properties of two alternating poly[3‐(hex‐1‐enyl)thiophene‐co‐thiophene]s

Two alternating poly[3‐(hex‐1‐enyl)thiophene‐co‐thiophene]s, Pa (with 77% trans‐isomer and 23% cis‐isomer) and Pb (with 100% trans‐isomer), were synthesized by the coupling of 2,5‐dibromo‐3‐hex‐1‐enyl‐thiophene to 2,5‐bis(tributylstannyl)thiophene via a Stille reaction and compared with poly(3‐hexylthiophene‐co‐thiophene) ( P1 ) to study the effect of changing the carbon(α)–carbon(β) single bond into a carbon–carbon double bond on the properties of the polymers. From P1 to Pb and to Pa , the ultraviolet–visible absorption peaks of the polymers were slightly redshifted, and their electrochemical bandgaps decreased by 0.05–0.1 eV. X‐ray diffraction analysis indicated that Pa had a better lamellar structure than Pb . The hole mobilities of the three polymers, determined with the space‐charge‐limited current model, were 5.23 × 10^?6 ( P1 ), 2.34 × 10^?4 ( Pb ), and 7.02 × 10^?4 cm²/V s ( Pa ). The power conversion efficiencies (PCEs) of polymer solar cells based on the three polymers were 0.87 ( P1 ), 1.16 ( Pb ), and 1.70% ( Pa ). The increase in the hole mobility and PCE revealed the important effect of changing the carbon(α)–carbon(β) single bond into a carbon–carbon double bond on the properties of polythiophene derivatives containing 3‐alkylthiophene. The strategy used in this work enlarges the thinking to obtain novel, efficient donor polymers for optoelectronic applications. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 629–638, 2007     

CAD技术在电子封装中的应用及其发展

现代电子信息技术的发展,推动电子产品向多功能、高性能、高可靠性、小型化、低成本的方向发展,微电子封装、IC设计和IC制造共同构成IC产业的三大支柱。计算机辅助设计(CAD)作为一种重要的技术手段在IC产业中发挥了巨大作用,已广泛应用于电子封装领域。本文结合各个时期电子封装的特点,介绍了封装CAD技术的发展历程,并简要分析了今后发展趋势。     

沉积能量在气流介质中的热效应及其激光干涉法测量

从基本的气体动力学方程组出发分析了气流介质中由于放电、吸收激光等沉积能量所造成的热效应和气流的特性。对于典型的气流放电激光器条件,0.05≤M《0.2,气动方程有最简单的形式,很容易得到解析解,并可以用激光干涉法测量沉积能量和密度,温度和速度等气动参数沿流动方向的分布。