Thin tunnel oxide grown on silicon substrate pretreated by CF4 plasma

High tunneling current and large resistance against stress were the main issue of tunnel oxide for scaling down the operation voltage of EEPROMs. In this letter, thin-tunnel oxides grown on a CF₄ pretreated silicon substrate were prepared and investigated for the first time. The fabricated oxide has about three orders of tunneling current higher than that of control one; furthermore, the stress induced anomalous and low electric field leakage currents were greatly suppressed. The improvement could be contributed to F-incorporation in oxide. This type of oxide is suitable for fabricating low-voltage EEPROMs and less process complexity was added     

Resonant two-photon ionization with high-order continuum states

In this paper,the resonant two-photon ionization of atoms with high-order con-tinuum state is studied.It's found that the C-C coupling among the continuum states enhancesthe two-level atomic Rabi oscillation,and the direct transition from the intermidiate excitedstate to the continuum weakens the Rabi oscillation.Therefore the photoelectron energy spec-tra and the population are changed.     

Schottky barrier heights of n-type and p-type Al0.48In0.52As

The authors report electrical measurements on four different metal contacts which formed Schottky barriers to lightly doped complementary n- and p-type Al_0.48In_0.52As epitaxial material grown by molecular beam epitaxy on semi-insulating InP substrates. The Schottky contact metals studied were Au, Al, Pt, and tri-layer Ti/Pt/Au. The Schottky barrier heights varied from 0.560 eV for Al on n-type AlInAs to 0.905 eV for Al on p-type AlInAs, with intermediate values for the other metals studied. The sum of n- and p-type Schottky barrier heights for each metal contact ranged from 1.440 to 1.465 eV, in good agreement with the accepted Al_0.48In_0.52As bandgap value of 1.45 eV     

影响Ga-Si-ZSM-5沸石分子筛形貌及晶粒大小的因素

考察了影响合成Ｇａ－Ｓｉ－ＺＳＭ－５分子筛形貌和晶粒大小的若干因素，实验结果表明，合成参数的影响非常大，在低温、加压条件下可获得更小晶粒的分子筛产物。     

水下激光成像及主要参数的理论计算

利用双流辐射理论，导出了信号光辐射照度的表达式。从理论上计算了同步扫描系统的信号光和后向散射光传到探测器的辐照度与衰减长度的定量关系。减小视场角和增大光源到探测器的距离可增成像距离。     

Envelope-constrained H∞ filter design: An LMIoptimization approach

In this correspondence, we solve the envelope-constrained H_∞ filter design problem by minimizing the H_∞ norm of the filtering error transfer function subject to the constraint that the filter output is contained in a prescribed envelope. The filter design is transformed into a standard linear matrix inequality (LMI) optimization problem     

Arrangement transformation approach to state-to-state quantum reactive scattering H + DH→DH + H, HH + D

Arrangement transformation approach (ATA) for doing state-to-state quantum reactive scattering calculations of atom-diatom systems is given. The state-to-state results of H + DH on ISTH potential energy surface are presented, and it can be deduced from the results that the ATA method can be used for the system with more than three atoms. Project supported by the National Natural Science Foundation of China (Grant No. 19774038) and Shandong Science Foundation (Grant No. Y96A08012).     

Solvent‐dependent formation of inclusion complexes between methylated cyclodextrins and biodegradable polymers

The inclusion complexes (ICs) of unmodified natural and methylated α‐cyclodextrins (CDs) with biodegradable polymers, polyethylene glycol and poly(ε‐caprolactone), were prepared by two methods, that is, the one using water and the other using chloroform as the solvent for the respective CDs. The ICs obtained were characterized by IR, WAXD, DSC, and ¹³C CP/MAS NMR. It was found that the possibility and the phenomena of IC formation could be varied with the degree of methyl substitution of CD as well as the type of solvents used. Methylated α‐CDs showed the prominent characteristics of IC formation with polymers in the case where chloroform was used than in the case where water was used as the solvent for CDs, while vice versa in the case of native α‐CD. © 2008 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 46: 879–891, 2008     

Efficient establishment of a fuzzy logic model for process modelingand control

Fuzzy logic modeling using internal and membership functions is a promising technique for the modeling and control of semiconductor manufacturing and packaging processes. To simplify its implementation procedure, a fuzzy logic model needs to be established with the minimum user interference. An algorithm with two major steps has been proposed and demonstrated for the efficient model establishment The first step develops intermediate fuzzy logic models with different numbers of membership functions assigned to each input variable. The number is one for the simplest model, and is increased one by one according to the pre-defined sequence and pathfinding criteria for more complex models, The second step stops the incremental procedure when the stopping criteria are met. The criteria are the multiple correlation factors R ² based on the training and the testing data. The algorithm's accuracy and efficiency have been demonstrated by testing it with five two-variable, nonlinear functions