New minimax inequality with applications to existence theorems of equilibrium points

A new minimax inequality is proved on a set which is the union of an increasing sequence of compact convex sets in a topological vector space. As applications, several existence theorems of equilibrium points for different games are obtained.The authors would like to thank the referees for their helpful suggestions.     

The Δ- Method for the Boltzmann Equation

A new numerical method is proposed to solve the Boltzmann equation. A frame is set up by using a discrete velocity approximation in the infinite velocity space, but by considering only those distribution function points which are not too small. The distribution function points may occur anywhere in the infinite discrete velocity space and are not constrained to a pre-specified region. A fourth-order finite difference is used for the convection terms. A Monte Carlo-like method is applied to the discrete velocity model of the collision integral. The effort of the method is proportional to the number of discrete points. Numerical examples are given for the full Boltzmann equation and results for some benchmark problems are compared with analytical or prior solutions.     

A DC-contact MEMS shunt switch

This paper presents the design, fabrication, and performance of a metal-to-metal contact micro-electro-mechanical (MEMS) shunt switch. The switch is composed of a fixed-fixed metal beam with two pull-down electrodes and a central DC-contact area. The switch is placed in an in-line configuration in a coplanar waveguide transmission line. This topology results in a compact DC-contact shunt switch and high isolation at 0.1-18 GHz. The isolation at MM-wave frequencies is limited by the inductance to ground and is -20 dB at 18 GHz. The application areas are in wireless communications and high-isolation switching networks for satellite systems     

热象无损检测技术应用

本文将热象无损检测技术应用于鉴定受测物结构和性质,并测出受测物中的缺陷,实验结果取得了较为满意的进展。     

利用单模光纤中的交叉相位调制产生单周期化脉冲的研究

描述了利用光纤中的交叉相位调制（XPM）效应产生单周期化脉冲的基本原理.详细分析了不同初始脉冲条件对脉冲频谱展宽的影响，然后针对具体事例用分步傅里叶方法对分析结果进行了验证.最终得到了200—1000THz的超宽带频谱，并给出了理想压缩脉冲的时域脉宽和形状. 关键词： 单周期化脉冲 交叉相位调制 超宽带频谱     

一种间接测量圆柱形管内样品冲击波压力的方法

 描述了一种联合使用锰铜计和康铜计间接测量柱对称滑移爆轰条件下，金属管内样品中冲击波压力的方法。给出了冲击压缩方法合成纤锌矿型氮化硼（wBN）时的测量结果。结果表明：管内样品中压力范围大致在11.5~22 GPa范围内，满足冲击波合成wBN所需的压力条件；管内样品压力的发展变化具有不连续性。证明了这种间接测量管内压力的方法是可行的。     

A simulation study of long throw sputtering for diffusion barrierdeposition into high aspect vias and contacts

Modified sputtering techniques, such as long throw sputtering, collimation, and ionized sputtering, have been proposed to improve VLSI topography bottom coverage by narrowing the angular distribution of the sputter flux at the substrate and reducing subsequent flux shadowing at the bottom of topography. This paper first investigates a number of unique aspects involved in the simulation of long throw sputter systems. In particular, time importance of inhomogeneous film density and nonunity sticking coefficients are addressed. The second part of the paper presents a simulation study of long throw sputtering, providing a comparison to collimated and standard sputtering systems. The simulations are performed using the SIMSPUD/SIMBAD ballistic deposition tool. SIMSPUD is used to study film uniformity over a 300-mm wafer and to generate angular distributions at the center and edge of the wafer. The ability of SIMBAD to simulate directed sputtering systems is verified by direct comparison to Ti films deposited into oxide trenches. The importance of modeling the film microstructure is demonstrated by comparison between cross-sectional SEM's micrograph for evaporation and modeling results, such as long throw sputtering with a variety of substrate/target spacings, typical “standard” as well as “collimated” systems. SEM's of overhang structures and simulations are also presented to demonstrate nonunity sticking during the co-sputtering of TiW     

Copper as an electron trap in GaAs0.6P0.4

An electron trap having an energy level of 0.14 eV from the conduction band edge was found in the bulk of copper-diffused VPE-grown n-GaAs_0.6P_0.4 by conventional DLTS measurements and by pulse-duration dependent capacitance amplitude measurements. The capture cross section at room temperature is about 1.0×10^–21 cm² and has a weak temperature dependence. These properties are attributed to a non-repulsive center having a capturing mechanism which involves multiphonon emission processes with hardly any lattice relaxation. Evolution of the spatial distributions of the traps with time under junction electric field were studied. The results suggest that the trap is positively charged and has a high diffusivity under electric field. The center can thus be identified as positively charged interstitial copper ion rather than some form of copper complexes.     

使用超声搅拌实现精密KOH各向异性体硅腐蚀

对使用超声搅拌和不加搅拌时(100)单晶硅的腐蚀特性进行了研究和对比.使用超声搅拌,可以得到光滑的、无小丘的腐蚀表面,整个硅片腐蚀深度的误差不超过1μm.实验结果表明,该方法可以有效地实现精密KOH各向异性体硅腐蚀.