Enhanced electromagnetic transmission through a slit surrounded by rectangular grooves

Electromagnetic transmission through a slit surrounded by rectangular grooves in a conducting plane is investigated. An electromagnetic boundary-value problem associated with a slit surrounded by rectangular grooves in a conducting plane is rigorously solved based on the Fourier transform, eigenfunction expansion and mode matching method. The transmission coefficient through the slit is represented in a series. Computation is performed to illustrate the effect of the groove geometry on the transmission behaviours.     

Thermally stable Ge/Ag/Ni Ohmic contact for InAlAs/InGaAs/InP HEMTs

Excellent annealed ohmic contacts based on Ge/Ag/Ni metallization have been realized in a temperature range between 385 and 500/spl deg/C, with a minimum contact resistance of 0.06 /spl Omega//spl middot/mm and a specific contact resistivity of 2.62 /spl times/10/sup -7/ /spl Omega//spl middot/cm/sup 2/ obtained at an annealing temperature of 425/spl deg/C for 60 s in a rapid thermal annealing (RTA) system. Thermal storage tests at temperatures of 215 and 250/spl deg/C in a nitrogen ambient showed that the Ge/Ag/Ni based ohmic contacts with an overlay of Ti/Pt/Au had far superior thermal stabilities than the conventional annealed AuGe/Ni ohmic contacts for InAlAs/InGaAs high electron mobility transistors (HEMTs). During the storage test at 215/spl deg/C, the ohmic contacts showed no degradation after 200 h. At 250/spl deg/C, the contact resistance value of the Ge/Ag/Ni ohmic contact increased only to a value of 0.1 /spl Omega//spl middot/mm over a 250-h period. Depletion-mode HEMTs (D-HEMTs) with a gate length of 0.2 /spl mu/m fabricated using Ge/Ag/Ni ohmic contacts with an overlay of Ti/Pt/Au demonstrated excellent dc and RF characteristics.     

Mechanical behavior of mismatch strain-driven microcantilever

A model of mechanical behavior of microcantilever due to mismatch strain during deposition of MEMS structures is derived. First, a microcantilever, modeled as an Euler-Bernoulli beam, is subjected to deposition of another material and a linear ordinary differential equation which considers the through-thickness variation of the mismatch strain is derived. Second, the deposition analysis is experimentally realized by electroplating of nickel onto an atomic force microscope (AFM) cantilever beam. Young's modulus of the electroplated nickel film is determined by using Sader's method and elementary beam theory. The deflection of the AFM cantilever is in-situ measured as a function of the electroplated thin film thickness through the optical method of AFM and the mismatch strain with the through-thickness variation is determined from the experiment results.     

Encapsulation of Nanoparticles Using Nitrilotriacetic Acid End‐Functionalized Polystyrenes and Their Application for the Separation of Proteins

The use of nitrilotriacetic acid end‐functionalized polystyrenes (NTA‐PS) as a multifunctional nanocarrier for the aqueous dispersion of CdSe, γ‐Fe₂O₃ and gold nanoparticles (NPs) is described. When the amphiphilic end‐ functionalized polystyrenes and NPs are dissolved together in tetrahydrofuran, the addition of water causes the spontaneous formation of micellar aggregates, resulting in the successful encapsulation and aqueous dispersion of NPs. Transmission electron microscopy (TEM), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy, and vibrating sample magnetometer (VSM) are used to characterize the structure and properties of the NPs‐containing micellar aggregates (nanocarrier). After complexation of Ni²⁺ with NTA on the surface of the nanocarrier containing γ‐Fe₂O₃, specific binding between Ni‐NTA complex and histidine‐tagged (His‐tagged) proteins enables selective separation of His‐tagged proteins using a magnet.     

Modular Layer‐by‐Layer Assembly of Polyelectrolytes,Nanoparticles, and Molecular Catalysts into Solar‐to‐Chemical Energy Conversion Devices

The design and fabrication of solar‐to‐chemical energy conversion devices are enabled through interweaving multiple components with various morphologies and unique functions using a versatile layer‐by‐layer assembly method. Cationic and anionic polyelectrolytes are used as an electrostatic adhesive to assemble the following functional materials: plasmonic Ag nanoparticles for improved light harvesting, upconversion nanoparticles for utilization of near‐infrared light, and polyoxometalate water oxidation catalysts for enhanced catalytic activity. Polyelectrolytes also have an additional function of passivating the surface recombination centers of the underlying photoelectrode. These functional components are precisely assembled on a model photoanode (e.g., Fe₂O₃ and BiVO₄) in a desired order and various combinations without degradation of their intrinsic properties. As a result, the performance of water oxidation photoanodes is synergistically enhanced. This study can enable the design and fabrication of novel solar‐to‐chemical energy conversion devices.     

Strain‐Visualization with Ultrasensitive Nanoscale Crack‐Based Sensor Assembled with Hierarchical Thermochromic Membrane

As eidetic signal recognition has become important, displaying mechanical signals visually has imposed huge demands for simple readability and without complex signal processing. Such visualization of mechanical signals is used in delicate urgent medical or safety‐related industries. Accordingly, chromic materials are considered to facilitate visualization with multiple colors and simple process. However, the response and recovery time is very long, such that rapid regular signals are unable to be detected, i.e., physiological signals, such as respiration. Here, the simple visualization of low strain ≈2%, with ultrasensitive crack‐based strain sensors with a hierarchical thermochromic layer is suggested. The sensor shows a gradient color change from red to white color in each strain, which is attributed to the hierarchical property, and the thermal response (recovery) time is dramatically minimized within 0.6 s from 45 to 37 °C, as the hierarchical membrane is inspired by termite mounds for efficient thermal management. The fast recovery property can be taken advantage of in medical fields, such as monitoring regular respiration, and the color changes can be delicately monitored with high accuracy by software on a mobile phone.     

InGaAsP microdisk lasers on AlxOy

InGaAsP microdisk lasers are fabricated on Al_xO_y by wafer fusion. Room-temperature continuous-wave operation with threshold pump power of 1.13 mW has been achieved from a 2.2-μm diameter microdisk laser. The lasing wavelength with incident pump power redshifts at a rate of 0.28 nm/mW which shows the improved thermal characteristics due to the high thermal conductivity of Al_xO _y bottom layer     

A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-/spl mu/m partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is -109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (/spl sim/300-/spl Omega//spl middot/cm) has the same frequency tuning range but 2 dB better phase noise compared with using low resistivity substrate (10 /spl Omega//spl middot/cm). The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m (excluding pads).     

Nanoshuttered OLEDs: Unveiled Invisible Auxiliary Electrode

In this study, organic light‐emitting diodes (OLEDs) with enhanced optical properties are fabricated by inserting a nanosized stripe auxiliary electrode layer (nSAEL) between the substrate and an indium tin oxide (ITO) layer. This design can avoid the shortcomings of conventional microsized layers while maintaining high optical uniformity due to the improved conductivity of the electrode. The primary advantage is that the nSAEL (submicrometer scale) is no longer visible to the naked eye. Moreover, the reflective shuttered (grating) structure of the nSAEL increases the forward‐directed light by the microcavity (MC) effect and minimizes the loss of light by the extracting the surface plasmon polariton (SPP) mode. In this study, the degree of the MC and SPP can be controlled with the parameters of the nSAEL by simply conjugating the conditions of laser interference lithography (LIL). Therefore, the current and power efficiencies of the device with an nSAEL with optimized parameters are 1.17 and 1.23 times higher than the reference device at 1000 cd/m², respectively, and at these parameters, the overall sheet resistance is reduced to less than half (48%). All of the processes are verified by comparing the computational simulation results and the experimental results obtained with the actual fabricated device.     

Low‐Noise Multispectral Photodetectors Made from All Solution‐Processed Inorganic Semiconductors

Infrared, visible, and multispectral photodetectors are important components for sensing, security and electronics applications. Current fabrication of these devices is based on inorganic materials grown by epitaxial techniques which are not compatible with low‐cost large‐scale processing. Here, air‐stable multispectral solution‐processed inorganic double heterostructure photodetectors, using PbS quantum dots (QDs) as the photoactive layer, colloidal ZnO nanoparticles as the electron transport/hole blocking layer (ETL/HBL), and solution‐derived NiO as the hole transport/electron blocking layer (HTL/EBL) are reported. The resulting device has low dark current density of 20 nA cm^‐2 with a noise equivalent power (NEP) on the order of tens of picowatts across the detection spectra and a specific detectivity (D*) value of 1.2 × 10¹² cm Hz^1/2 W^‐1. These parameters are comparable to commercially available Si, Ge, and InGaAs photodetectors. The devices have a linear dynamic range (LDR) over 65 dB and a bandwidth over 35 kHz, which are sufficient for imaging applications. Finally, these solution‐processed inorganic devices have a long storage lifetime in air, even without encapsulation.