A 4-MB on-chip L2 cache for a 90-nm 1.6-GHz 64-bit microprocessor

A 4-MB L2 data cache was implemented for a 64-bit 1.6-GHz SPARC(r) RISC microprocessor. Static sense amplifiers were used in the SRAM arrays and for global data repeaters, resulting in robust and flexible timing operation. Elimination of the global clock grid over the SRAM array saves power, enabled by combining the clock information with array select signals. Redundancy was implemented flexibly, with shift circuits outside the main data array for area efficiency. The chip integrates 315 million transistors and uses an 8-metal-layer 90-nm CMOS process.     

广义频率响应函数的鲁棒建模新方法

针对基于非线性谱分析的故障诊断技术的需要,研究了非线性系统的广义频率响应函数的鲁棒在线建模方 法。首先将次元分析算法应用于Volterra级数模型的辨识,并通过对此算法的修正,得到了一种改进的Volterra系统的鲁 棒辨识算法。对其鲁棒性能进行的分析表明,改进算法的鲁棒抗噪性能被明显提高。在此基础上,提出了一种广义频率响 应函数的两步鲁棒建模新方法。仿真实验表明,该方法具有良好的鲁棒收敛性能,能够有效解决GFRF的在线建模问题。     

凸体的曲率映象与仿射表面积

本文研究了一些特殊凸体与其极体的曲率仿射表面积乘积的下界.对任意两个凸体,建立了它们的投影体的混合体积与其仿射表面积的一个不等式（见文[1-15]）.     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

A scheme for teleporting Schrdinger-cat states via the dispersive atom-cavity-field interaction

A proposal is presented for teleporting Schrding-cat states. The process of the teleportation is achieved through the dispersive atom-cavity-field interaction. In this proposal, only measurement on the cavity field and on the singlet atomic states are used.     

UV-LIGA深度光刻机平滑衍射技术研究

UV-LIGA深度光刻技术是加工微型机电系统的一项重要的微细加工技术。介绍了一种平滑衍射效应的位错强度叠加原理，它采用了蝇眼积分透镜去平滑衍射，并模拟数值计算了硅片表面的光强分布，最后给出了光刻结果。     

新疆野生黑加仑与马林果实的营养成分分析

通过对新疆野生黑加仑和野生马林的脂肪油，8种微量元素，17种氨基酸以及维生素C的含量进行测定得出：黑加仑脂肪油含量为17．9％，马林的脂肪油含量为22．3％，其中，黑加仑脂肪油中，r－亚麻酸的含量为19．02％，而马林中，其含量为9．40％，黑加仑中K，Na,Ca,Cu,Zn,Fe的含量比马林中的含量高，而Mn,Mg元素的含量却比马林含量低；马林的维生素C含量为16．22mg/g，黑加仑的含量为108mg/g，黑加仑的氨基酸的总量为1．63％，马林为1．14％。     

一维无序体系电子跳跃导电研究

建立了电子隧穿电导模型,推导了一维无序体系新的直流电导公式.通过计算20000格点无序体系的直流电导率,分析了直流电导率和温度及外场电压的关系,讨论了无序度对直流电导的影响.计算结果表明,无序体系的直流电导率随无序度的增加而减小;外加电场较小时,电导率相对较大,且出现一系列峰值,电压较大时,电导率反而较小;无序体系在低温区出现了负微分电阻特性,电导率随温度的升高而增大,在高温区电导率随温度的升高而减小.计算结果和实验符合很好 关键词： 无序体系 电子隧穿 直流电导率     

A TVD Type Wavelet-Galerkin Method for Hamilton-Jacobi Equations

In this paper,we use Daubechies scaling functions as test functions for the Galerkin method,and discuss Wavelet-Galerkin solutions for the Hamilton-Jacobi equations.It can be proved that the schemesare TVD schemes.Numerical tests indicate that the schemes are suitable for the Hamilton-Jacobi equations.Furthermore,they have high-order accuracy in smooth regions and good resolution of singularities.