The 2009 world average of <Emphasis Type="Italic">α</Emphasis><Subscript><Emphasis Type="Bold">s</Emphasis></Subscript>

Measurements of α _s, the coupling strength of the Strong Interaction between quarks and gluons, are summarised and an updated value of the world average of a_s(M_Z⁰)\alpha_{\mathrm{s}}(M_{\mathrm{Z}^{0}}) is derived. Special emphasis is laid on the most recent determinations of α _s. These are obtained from τ-decays, from global fits of electroweak precision data and from measurements of the proton structure function F₂, which are based on perturbative QCD calculations up to O(a_s⁴)\mathcal{O}(\alpha_{\mathrm{s}}^{4}); from hadronic event shapes and jet production in e⁺e⁻ annihilation, based on O(a_s³)\mathcal{O}(\alpha_{\mathrm{s}}^{3}) QCD; from jet production in deep inelastic scattering and from ϒ decays, based on O(a_s²)\mathcal{O}(\alpha_{\mathrm{s}}^{2}) QCD; and from heavy quarkonia based on unquenched QCD lattice calculations. A pragmatic method is chosen to obtain the world average and an estimate of its overall uncertainty, resulting in

Current versus gate voltage hysteresis in organic field effect transistors

Abstract  

Research into organic field effect transistors (OFETs) has made significant advances—both scientifically and technologically—during the last decade, and the first products will soon enter the market. Printed electronic circuits using organic resistors, diodes and transistors may become cheap alternatives to silicon-based systems, especially in large-area applications. A key parameter for device operation, besides long term stability, is the reproducibility of the current–voltage behavior, which may be affected by hysteresis phenomena. Hysteresis effects are often observed in organic transistors during sweeps of the gate voltage (V _GS). This hysteresis can originate in various ways, but comparative scientific investigations are rare and a comprehensive picture of “hysteresis phenomena” in OFETs is still missing. This review provides an overview of the physical effects that cause hysteresis and discusses the importance of such effects in OFETs in a comparative manner.     

Single-file diffusion near channel boundaries

Molecular transport under the conditions of single-file diffusion was investigated near the channel boundaries by using dynamic Monte Carlo and molecular dynamics simulations of tracer exchange between single-file channels and their surroundings. The boundary effect reported in our recent papers (Vasenkov S.; K?rger, J. Phys. Rev. E 2002, 66, 052601. Schüring, A.; Vasenkov S.; Fritzsche, S. J. Phys. Chem. B 2005, 109, 16711) was studied in detail. This boundary effect is characterized by deviations of the intrachannel concentration profiles of tracer molecules observed in the case of single-file diffusion near the channel boundaries from the corresponding profiles typical for normal diffusion. It has been shown in our previous studies that these deviations occur under the conditions when the potential-energy difference inside and outside of single-file channels was both comparable and much larger than the activation energy of intrachannel diffusion. Here, we report a quantitative model describing the boundary effect. According to this model, an occurrence of the boundary effect is related to a complex character of diffusion in finite single-file systems. Such diffusion can be described by the following two types of movements occurring in parallel: (i) correlated displacements of all molecules in any particular channel and (ii) fast displacements of single molecules, which are uncorrelated with the displacements of all other molecules in the same channel. The latter displacements are restricted to a certain length interval that depends on the channel length and the channel occupancy. This length interval is shown to determine the extensions of the channel margins where the boundary effect is observed.     

Soil-structure interaction of tunnel-structures under consideration of far- and near-field effects

The response of a tunnel structure under a moving and oscillating dynamic load can be calculated by means of a hybrid Integral–Transformation–Method–FEM approach. In the ITM approach analytical solutions of ideal geometries of the infinite continuum are superposed such that the wave–number impedance and transfer–function at the interior of a circular tunnel can be calculated efficiently. By this means the infinite continuum can be coupled to an arbitrary tunnel structure which is modelled by the FEM with corresponding form–functions. In order to reduce the effort for the coupling, the characteristics of the analytically given transfer–functions which can be split into near– and far–fields is taken into account. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)     

Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C₆₀ as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm²/Vs. Devices with pentacene showed a mobility of 0.16 cm²/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ～0.3 cm²/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels.     

Laser ultrasonic receivers based on organic photorefractive polymer composites

We present two laser ultrasonic receivers based on organic photorefractive polymer composites with 2-[4-bis(2-methoxyethyl)aminobenzylidene]malononitrile (AODCST) or 2-dicyanomethylen-3-cyano-5,5-dimethyl-4-(4′-dihexylaminophenyl)-2,5-dihydrofuran nonlinear optical chromophores. Experimental results show sensitivities of the ultrasonic receivers of ~9.5 × 10^?8 nm (W/Hz)^0.5 for both composites, and a faster response time (~60 ms) for the AODCST-based laser ultrasonic receiver. We show that such LUS detectors are highly suitable for contactless thickness measurements of aluminum, steel sheets and defect detection with an accuracy of 100 μm.     

Intensity dependent but temperature independent charge carrier generation in organic photodiodes and solar cells

Measurements of the transient photoresponse of organic photodiodes and solar cells show a strong saturation effect in the quantum efficiency at laser fluences above approximately 3.3 μJ/cm². By a comparison of the measured intensity, temperature and field dependence of the transient pulse responses with extended drift–diffusion simulations, the loss of charge carriers can be traced back to a quadratic loss channel in the charge carrier generation process. In contrast to the predictions of the commonly used Onsager–Braun charge carrier generation model, we demonstrate that the dissociation of bound electron–hole-pairs is temperature independent but slightly field dependent.