五种恒虚警方法性能分析

比较了五种恒虚警方法在各种杂波背景下的检测性能,得出CMLD-CFAR是工程上可以实现且检测性能比较好的一种恒虚警处理方法.     

个性化公开密钥系统的设计

论文提出利用用户提供的个性化信息来随机产生关联大素数,保证了素数选取的随机化、个性化,提高了RSA算法的安全性。     

信息系统灾难恢复能力评估方法研究

论文提出了一种信息系统灾难恢复能力评估方法:信息资产分析方法、本地灾难恢复和远程灾难恢复等级的划分方法,并在此基础上,利用AHP层次分析法,构建了一套灾难恢复能力评估指标体系。该方法可以使评估结果具有更好的针对性和全面性。     

基于SpatialWare的地理数据访问安全性研究

地理信息系统的应用越来越广泛,特别是基于网络的GIS的发展使地理空间信息通过网络被多用户所共享,因此必须考虑地理数据访问的安全性。文章以MapInfoSpatailWare空间数据引擎为研究对象,给出了基于此模式的数据访问安全性解决方案。     

干涉型激光直写技术用于光盘防伪

利用作者研制的干涉型激光直写系统，阐述了干涉型激光直写设计OVD的方法，防伪特征，介绍了应用于光盘防伪的OVD技术和应用前景，给出了实验结果。     

Thermo-Sensitive Ba0.64Sr0.36TiO3 Thin Film Capacitors for Dielectric Type Uncooled Infrared Sensors

Ba_0.64Sr_0.36TiO₃ (BST) thin films are prepared on Pt/Ti/SiO₂/Si₃N₄/SiO₂/Si substrates by a sol-gel method. Thermo-sensitive BST thin film capacitors with a Metal-Ferroelectrics-Metal (M-F(BST)-M) structure are fabricated as the active elements of dielectric type uncooled infrared sensors. XRD are employed to analyze the crystallographic structures of the films. AFM observations reveal a smooth and dense surface of the films with an average grain size of about 35 nm. Rapid temperature annealing (RTA) process is a very efficient way to improve crystallization quality. The preferable annealing temperature is 800°C for 1 min. The butterfly shaped C-V curves of the capacitors indicate the films have a ferroelectric nature. The dielectric constant and dielectric loss of the films at 100 kHz are 450 and 0.038, respectively. At 25°C, where the thermo-sensitive capacitors work, the temperature coefficient of dielectric constant (TCD) is about 5.9 %/°C. These results indicate that the capacitors with sol-gel derived BST thin films are promising to develop dielectric type uncooled infrared sensors.     

Sensitive chemically amplified electrochemical detection of ruthenium tris-(2,2′-bipyridine) on tin-doped indium oxide electrode

Optimized combination of chemical agents was selected for sensitive electrochemical detection of dissolved ruthenium tris-(2,2′-bipyridine) (Ru-bipy). The detection was based on the chemical amplification mechanism, in which the anodic current of a redox-active analyte was amplified by a sacrificial electron donor in solution. On indium-doped tin oxide (ITO) electrodes, electrochemical reaction of the analyte was reversible, but that of the electron donor was greatly suppressed. Several transition metal complexes, such as ferrocene and tris-(2,2′-bipyridine) complexes of osmium, iron and ruthenium, were evaluated as model analyte. A correlation between the amplified current and the standard potential of the complex was observed, and Ru-bipy generated the largest current. A variety of organic bases, acids and zwitterions were assessed as potential electron donor. Sodium oxalate was found to produce the largest amplification factor. With Ru-bipy as the model analyte and oxalate as the electron donor, the analyte concentration curve was linear up to 50 μM, with a lower detection limit of approximately 50 nM. Preliminary work was presented in which a Ru-bipy derivative was attached to bovine serum albumin and detected electrochemically. Although the combination of Ru-bipy, oxalate and ITO electrode has been used before for electrochemiluminescent detection of Ru-bipy and oxalate, as well as electrochemical detection of oxalate, its utility in amplified voltammetric detection of Ru-bipy as a potential electrochemical label has not been reported previously.     

Analysis of the Scattering Characteristic of Several Waveguide Components Using Boundary Element Method

Several kinds of waveguide components such as curved waveguide bends, arbitrary angle waveguide bends and T-junctions have been analyzed with boundary element method in this paper. A new discretization method for the boundary element method to solve the waveguide discontinuities has been given. The numerical results obtained agree well with the experimental results and numerical results in other literature. Especially, the scattering characteristics of Forded E-, H-plane T-junctions in 3mm band have been analyzed using boundary element method and the calculation results are presented.     

智能化中高压变频器实载试验平台的实现

中、高压变频器产量越来越多，但试验手段大多比较落后，一般采用带电机空转的方法。本文介绍了一个高压变频器试验平台，通过该平台可以对电压等级在3kV～10kV、功率在5000kW以下的变频器进行实载试验。