Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

GMSK无线接收终端设计

设计了GMSK(Gauss Minimum Shift Keying，高斯最小频移键控)无线接收终端的硬件与软件系统。硬件的射频电路对空中信号进行接收与滤波，再由以MX589构成的解调模块解调，输出数字信号；数字硬件以单片机GMS97L5为核心。软件系统设计了对IC卡AT88SCl608加密卡的认证以及对串行数据的接收与处理的中断程序。终端系统接收数据快、性能稳定。     

软印刷技术

软印刷技术是基于弹性体印章/模具来转移图形结构的微纳加工技术。详细介绍了软印刷技术中转移图形结构的多种方式,并探讨软印刷技术在微纳电子学、光学、传感器、生物等领域的广泛应用。对软印刷技术的弹性体印章/模具制备、聚二甲基硅氧烷的属性、理论研究等进行了探讨。     

16信道0.35μmCMOS/VCSEL光发射模块

研究了垂直腔面发射激光器 (VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性 ,将 1× 16的VCSEL与CMOS专用集成电路进行多芯片组装 (MCM ) ,混合集成为 16信道VCSEL光发射功能模块 .测试过程中 ,功能模块的光电特性及其均匀性良好 ,测量的 - 3dB频带宽度大于 2GHz.     

基于AFM的微结构加工实验研究

本文建立了微动工作台和原子力显微镜相结合的微加工系统，在该系统上采用金刚石针尖进行微加工实验，与SPI系统本身的刻划软件刻划出的图形进行了比较分析，得出这个系统适合微结构的加工；并给出了采用该方法加工的1111面及多边形面微结构；还分析了金刚石针尖几何角度及SPM和工作台的相关参数对加工的影响。     

超临界流体色谱流程设计及其应用

本文设计了多功能超临界流体色谱流程,流程中包括毛细管/微填充柱SFC,GC,计算机控制温度、压力、密度及信号采集、处理,配置有超临界流体萃取池,解决了超临界流体色谱分流口易堵问题。利用该流程,将石腊、DC-200气相色谱固定相、黄油、蜂蜡、救心油、红花油等样品进行超临界流体色谱分离。     

Multiflorin,A New Secoiridold Lactone from Jasminum Multiflorum

A new secoiridoid, multiflorin (1) has been isolated from the EtOAc-soluble fraction of Jasminum multiflorum (Oleaceace). The structure of I was determined by application of spectral methods.     

A profit-maximizing supply chain network design model with demand choice flexibility

We present a profit-maximizing supply chain design model in which a company has flexibility in determining which customers to serve. The company may lose a customer to competition if the price it charges is too high. We show the problem formulation and solution algorithm, and discuss computational results.     

EXISTENCE OF PERIODIC SOLUTIONS OF SYSTEM OF DIFFERENCE EQUATIONS

This paper studies the nonautonomous nonlinear system of difference equationsΔx(n)=A(n)x(n)+f(n,x(n)),n∈Z,(*) where x(n)∈R~N,A(n)=(a_(ij)(n))N×N is an N×N matrix,with a-(ij)∈C(R,R) for i,j= 1,2,3,...,N,and f=(f_1,f_2,...,f_N)~T∈C(R×R~N,R~N),satisfying A(t+ω)=A(t),f(t+ω,z)=f(t,z) for any t∈R,(t,z)∈R×R~N andωis a positive integer.Sufficient conditions for the existence ofω-periodic solutions to equations (*) are obtained.     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs