A novel driver assist stability system for all-wheel-drive electric vehicles

A novel driver-assist stability system for all-wheel-drive electric vehicles is introduced. The system helps drivers maintain control in the event of a driving emergency, including heavy braking or obstacle avoidance. The system comprises a fuzzy logic system that independently controls wheel torque to prevent vehicle spin. Another fuzzy wheel slip controller is used to enhance vehicle stability and safety. A neural network is trained to generate the required reference for yaw rate. Vehicle true speed is estimated by a sensor data fusion method. The intrinsic robustness of fuzzy controllers allows the system to operate in different road conditions successfully. Moreover, the ease of implementing fuzzy controllers gives a potential for vehicle stability enhancement.     

Low supply voltage high-performance CMOS current mirror with low input and output voltage requirements

This paper presents a scheme for the efficient implementation of a low supply voltage continuous-time high-performance CMOS current mirror with low input and output voltage requirements. This circuit combines a shunt input feedback and a regulated cascode output stage to achieve low input resistance and very high output resistance. It can be used as a high-precision current mirror in analog and mixed signal circuits with a power supply close to a transistor's threshold voltage. The proposed current mirror has been simulated and a bandwidth of 40 MHz has been obtained. An experimental chip prototype has been sent for fabrication and has been experimentally verified, obtaining 0.15-V input-output voltage requirements, 100-/spl Omega/ input resistance, and more than 200-M/spl Omega/ (G/spl Omega/ ideally) output resistance with a 1.2-V supply in a standard CMOS technology.     

RF microelectronics for W-CDMA mobile communication systems

Third generation (3G) mobile communication systems are now just starting to be introduced. With a maximum data rate of 2 Mbit/s they will make wireless access to broadband data services like the Internet or video applications feasible. Most of the different physical layer technologies summarised under the acronym 3G are based on wideband-CDMA (W-CDMA), in contrast to existing second generation systems, which mostly use TDMA and FDMA. This has severe consequences for the design of the transceiver front-ends. During standardisation these were assumed to have an adequate RF performance yet they still present a performance bottleneck for the system. Starting with a short introduction to UMTS (Universal Mobile Telecommunications System)-the 3G standard to be deployed in Europe and already operating in Japan-this paper describes by way of example some of the test cases specified for UMTS and their impact on the analogue front-end. It is shown that accurate simulation of all the analogue and digital signal processing is necessary in order to predict the RF performance needed of today's commercial RFICs. The paper then presents and reviews some actual design examples. Finally, possible technologies and techniques for application in future mobile terminals are discussed     

Physical Properties of Molten Salts in an Electron Donor–Acceptor Approach: The Density

It is found that the density (number of the component ion or molecule in 1 cm³) of a molten salt could be expressed as a function of the product of the electron donating and accepting properties of the component anion and cation. This equation is very useful for estimating the density of any molten salt at high temperature with the standard deviation accurately.     

Improvement in the DOA estimation of broadband signals usingpartially IIR beamformers

An ideal broadband beamformer requires an increased number of taps for each filter, which in turn increases the complexity of the design. It is shown that for angles near the broadside of the antenna the beamforming is more accurate compared to the angles near the endfire, and it is advantageous to use recursive filters combined with a computed number of zeros for angles near the endfire. The proposed method is used for estimating the arrival angle of the incoming signals and displays uniform accuracy for all angles     

InP D-HBT ICs for 40-Gb/s and higher bitrate lightwave transceivers

The combination of device speed (f/sub T/, f/sub max/ > 150 GHz) and breakdown voltage (V/sub bceo/ > 8 V) makes the double heterojunction bipolar InP-based transistor (D-HBT) an attractive technology to implement the most demanding analog functions of 40-Gb/s transceivers. This is illustrated by the performance of a number of analog circuits realized in an InP D-HBT technology with an 1.2- or 1.6-/spl mu/m-wide emitter finger: a low phase noise push-push voltage-controlled oscillator with -7-dBm output power at 146 GHz, a 40-GHz bandwidth and low-jitter 40-Gb/s limiting amplifier, a lumped 40-Gb/s limiting driver amplifier with 4.5-V/sub pp/ differential output swing, a distributed 40-Gb/s driver amplifier with 6-V/sub pp/ differential output swing, and a number of distributed preamplifiers with up to 1.3-THz gain-bandwidth product.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Crosstalk between microstrip transmission lines

Methods for prediction of crosstalk between microstrip transmission lines are reviewed and simplified for the weak-coupling case. Classical coupled transmission line theory is used for uniform lines, and potential and induced EMF methods are used for crosstalk between nonuniform lines. It is shown that the potential method is equivalent to classical coupled transmission line theory for the case of uniform lines. An experiment was performed for uniform coupled microstrip lines for frequencies from 50 MHz to 5 GHz, and good agreement between theory and measurement was obtained for both near- and far-end crosstalk     

Correlation of modified crack tip opening distance with heat input to the heat affected zone of high-strength low-alloy steels

Investigated is the dependency of the crack tip opening displacement (CTOD) on the local microstructure of the heat affected zone in high-strength low-alloy (HSLA) microalloyed steel. Since the initiation of the crack tip location could not be controlled in fatigue, any possible correlation between heat iput in welding and fracture toughness could be smeared. Modified CTOD data are defined; they show that the fracture resistance of the weld joint decreased as the heat input increased.